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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor	Original	QEC112, QEC113 940nm QEC11X 940nm QEC113	PDF
QEC112 Abstract: QEC113 QEC11X QSCXXX Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm	Original	QEC112, QEC113 QEC11X QEC113 QEC112 QSCXXX	PDF
QSCXXX Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059 Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor	Original	QEC112, QEC113 940nm QEC11X 940nm QEC113 QSCXXX GaAs 850 nm Infrared Emitting Diode QEC112 QEC113.0059	PDF
QEC11X Abstract: QEC112 QEC113 QSC112 Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)	Original	QEC112 QEC113 QEC11X QSC112 DS300334 QEC112 QEC113 QSC112	PDF
Untitled Abstract: No abstract text available Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a	OCR Scan	QEC112/113 QEC11X QSC11X 000L270	PDF
ST2130 Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted Text: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)	OCR Scan	QEC112/113 ST2130 QEC11X QSC11X mA167' QSC113 mW/10Â mA1671 ST2130 QSC112 diode 465 nm 5 mm tinted	PDF
Untitled Abstract: No abstract text available Text: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a	OCR Scan	QEC112/113 QEC11X QSC11X	PDF
ST2130 Abstract: No abstract text available Text: [ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * -ANODE J .018(0.46) SQ ±.003 (±0.08)'	OCR Scan	QEC112/113 QEC11X QSC11X ST2130	PDF