Untitled
Abstract: No abstract text available
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
|
Original
|
PDF
|
QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
|
QEC112
Abstract: QEC113 QEC11X QSCXXX
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm
|
Original
|
PDF
|
QEC112,
QEC113
QEC11X
QEC113
QEC112
QSCXXX
|
QSCXXX
Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059
Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor
|
Original
|
PDF
|
QEC112,
QEC113
940nm
QEC11X
940nm
QEC113
QSCXXX
GaAs 850 nm Infrared Emitting Diode
QEC112
QEC113.0059
|
QEC11X
Abstract: QEC112 QEC113 QSC112
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)
|
Original
|
PDF
|
QEC112
QEC113
QEC11X
QSC112
DS300334
QEC112
QEC113
QSC112
|
Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a
|
OCR Scan
|
PDF
|
QEC112/113
QEC11X
QSC11X
000L270
|
ST2130
Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted
Text: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)
|
OCR Scan
|
PDF
|
QEC112/113
ST2130
QEC11X
QSC11X
mA167'
QSC113
mW/10Â
mA1671
ST2130
QSC112
diode 465 nm 5 mm tinted
|
Untitled
Abstract: No abstract text available
Text: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a
|
OCR Scan
|
PDF
|
QEC112/113
QEC11X
QSC11X
|
ST2130
Abstract: No abstract text available
Text: [*ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * * -ANODE J .018(0.46) SQ ±.003 (±0.08)'
|
OCR Scan
|
PDF
|
QEC112/113
QEC11X
QSC11X
ST2130
|