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    74958 Price and Stock

    Phoenix Contact 1749586

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    Weidmüller Interface GmbH & Co. KG 1749580000

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    Wiha Quality Tools 74958

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    Weidmüller Interface GmbH & Co. KG 2749580000

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    74958 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8467 transistor

    Abstract: No abstract text available
    Text: SPICE PARAMETER EM6M1 * MEM6M1_N NMOSFET model * Date: 2006/09/07 .MODEL MEM6M1_N NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12 + MJ=.74958


    Original     		0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 8467 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    217 diode

    Abstract: si3879
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 217 diode si3879 PDF

    4405

    Abstract: No abstract text available
    Text: SPICE PARAMETER EMF9 * QEMF9 NPN BJT model * Date: 2006/11/30 .MODEL QEMF9 NPN + IS=130.00E-15 + BF=394.21 + VAF=31.700 + IKF=2.0336 + ISE=130.00E-15 + NE=1.7644 + BR=166.53 + VAR=100 + IKR=16.665 + ISC=977.07E-15 + NC=1.4276 + NK=.73285 + RE=.13 + RB=5.8745


    Original     		00E-15 07E-15 128E-12 019E-12 44E-12 3199E-9 0000E-6 0298E-6 8571E9 4405 PDF

    4405

    Abstract: UM5K1N NMOS 74958
    Text: SPICE PARAMETER UM5K1N by ROHM TR Div. * MUM5K1N NMOS model * Date: 2006/09/07 .MODEL MUM5K1N NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 4405 UM5K1N NMOS 74958 PDF

    EMF32

    Abstract: No abstract text available
    Text: SPICE PARAMETER EMF32 * EMF32_DT PNP DT model * Date: 2007/01/09 * BJT with a resistor *C B E .SUBCKT EMF32_DT 1 2 3 R1 2 Base Rb 4.7k Q1 1 Base 3 QDTA1 .MODEL Rb RES + R=1 .MODEL QDTA1 PNP + IS=20.000E-15 + BF=187.64 + VAF=10 + IKF=.21074


    Original     		EMF32 000E-15 145E-12 937E-12 613E-12 00E-12 00E-9 MEMF32 EMF32 PDF

    4405

    Abstract: UM6K1N nmos transistor 74958 NMOS
    Text: SPICE PARAMETER UM6K1N by ROHM TR Div. * MUM6K1N NMOS model * Date: 2006/09/07 .MODEL MUM6K1N NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 4405 UM6K1N nmos transistor 74958 NMOS PDF

    2SK3019

    Abstract: 4405 2SK301
    Text: SPICE PARAMETER 2SK3019 by ROHM TR Div. * M2SK3019 NMOS model * Date: 2006/09/07 .MODEL M2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		2SK3019 M2SK3019 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3019 4405 2SK301 PDF

    ISC202

    Abstract: No abstract text available
    Text: SPICE PARAMETER EMF6 * QEMF6 PNP BJT model * Date: 2006/11/30 .MODEL QEMF6 PNP + IS=110.00E-15 + BF=394.09 + VAF=21.739 + IKF=.52024 + ISE=110.00E-15 + NE=1.6818 + BR=28.439 + VAR=100 + IKR=1.3710 + ISC=2.0285E-12 + NC=2.1543 + NK=.56117 + RE=.1 + RB=4.9687


    Original     		00E-15 0285E-12 776E-12 9662E-12 39E-12 676E-9 0000E-6 0298E-6 8571E9 ISC202 PDF

    4405

    Abstract: nmos transistor NE-17
    Text: SPICE PARAMETER UMF9N * QUMF9N NPN BJT model * Date: 2006/11/30 .MODEL QUMF9N NPN + IS=130.00E-15 + BF=394.21 + VAF=31.700 + IKF=2.0336 + ISE=130.00E-15 + NE=1.7644 + BR=166.53 + VAR=100 + IKR=16.665 + ISC=977.07E-15 + NC=1.4276 + NK=.73285 + RE=.13 + RB=5.8745


    Original     		00E-15 07E-15 128E-12 019E-12 44E-12 3199E-9 0000E-6 0298E-6 8571E9 4405 nmos transistor NE-17 PDF

    4405

    Abstract: 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 M2SK3018
    Text: SPICE PARAMETER 2SK3018 by ROHM TR Div. * M2SK3018 NMOS model * Date: 2006/09/07 .MODEL M2SK3018 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		2SK3018 M2SK3018 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 4405 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 PDF

    Si3879DV-T1-E3

    Abstract: Si3879DV-T1-GE3 SI3879DV si3879 74958
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		Si3879DV 2002/95/EC 18-Jul-08 Si3879DV-T1-E3 Si3879DV-T1-GE3 si3879 74958 PDF

    Si3879DV-T1-E3

    Abstract: No abstract text available
    Text: New Product Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) rDS(on) (Ω) - 20 • LITTLE FOOT Plus Schottky Power MOSFET Qg (Typ)


    Original     		Si3879DV Si3879DV-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1hay 11-Mar-11 PDF

    RS Components

    Abstract: nmos transistor nmos transistors EM6K1
    Text: SPICE PARAMETER EM6K1 by ROHM TR Div. * MEM6K1 NMOS model * Date: 2006/09/07 .MODEL MEM6K1 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 RS Components nmos transistor nmos transistors EM6K1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE PARAMETER UMF6N * QUMF6N PNP BJT model * Date: 2006/11/30 .MODEL QUMF6N PNP + IS=110.00E-15 + BF=394.09 + VAF=21.739 + IKF=.52024 + ISE=110.00E-15 + NE=1.6818 + BR=28.439 + VAR=100 + IKR=1.3710 + ISC=2.0285E-12 + NC=2.1543 + NK=.56117 + RE=.1 + RB=4.9687


    Original     		00E-15 0285E-12 776E-12 9662E-12 39E-12 676E-9 0000E-6 0298E-6 8571E9 PDF

    4405

    Abstract: 2SK3541 2SK354 74958 8467 transistor rb transistor M2SK nmos transistor M2SK3541
    Text: SPICE PARAMETER 2SK3541 by ROHM TR Div. * M2SK3541 NMOS model * Date: 2006/09/07 .MODEL M2SK3541 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original     		2SK3541 M2SK3541 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 4405 2SK3541 2SK354 74958 8467 transistor rb transistor M2SK nmos transistor PDF

    S-71290

    Abstract: Si3879DV-T1-E3 SI3879DV
    Text: New Product Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) rDS(on) (Ω) - 20 • LITTLE FOOT Plus Schottky Power MOSFET Qg (Typ)


    Original     		Si3879DV Si3879DV-T1-E3 18-Jul-08 S-71290 PDF

    UMF32N

    Abstract: DSA0069052
    Text: SPICE PARAMETER UMF32N * UMF32N_DT PNP DT model * Date: 2007/01/09 * BJT with a resistor *C B E .SUBCKT UMF32N_DT 1 2 3 R1 2 Base Rb 4.7k Q1 1 Base 3 QDTA1 .MODEL Rb RES + R=1 .MODEL QDTA1 PNP + IS=20.000E-15 + BF=187.64 + VAF=10 + IKF=.21074


    Original     		UMF32N UMF32N 000E-15 145E-12 937E-12 613E-12 00E-12 00E-9 DSA0069052 PDF

    SICAL CO 41

    Abstract: ifrs 730
    Text: SICRL CO 4 2 / S O L Un/UR Cn/CR up V 350/385 1 15 I* 14x30 6 3 ;7 3 ,7 36 0 ,2 0 22 16 x 30 6 2,6 2,6 50 0 ,2 6 A 7 4 9 1 61 33 18x30 6 1,6 1,6 73 0 ,3 5 A 749162 47 18x40 7 1,2 1,2 103 0 ,46 A 749 1 6 3 33 14x30 10 2 ,0 2,0 73 0 ,2 7 47 16x30 10 1,7 1,70


    OCR Scan     		18x30 18x40 14x30 16x30 A749581 A749582 A749580 25x75 SICAL CO 41 ifrs 730 PDF

    FZK101

    Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
    Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974


    OCR Scan     		Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001 PDF