74123 spice
Abstract: 74123 SUU50N025-09BP
Text: SPICE Device Model SUU50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUU50N025-09BP
S-61927Rev.
09-Oct-06
74123 spice
74123
SUU50N025-09BP
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application notes 74121
Abstract: 74121 spice model 74121 sud*50n025 09bp 74121 ON SUD50N025-09BP sud*50n025
Text: SPICE Device Model SUD50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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SUD50N025-09BP
18-Jul-08
application notes 74121
74121 spice model
74121
sud*50n025 09bp
74121 ON
SUD50N025-09BP
sud*50n025
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB7D0NP30QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Back-light Inverter. FEATURES ・N-Channel : VDSS=30V, ID=7A. : RDS ON =23.5mΩ(Max.) @ VGS=10V
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KMB7D0NP30QA
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SUR50N025-09BP
Abstract: convergence
Text: SPICE Device Model SUR50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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SUR50N025-09BP
18-Jul-08
SUR50N025-09BP
convergence
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74123
Abstract: 74123 spice 742 mosfet
Text: SPICE Device Model SUU50N025-09BP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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SUU50N025-09BP
18-Jul-08
74123
74123 spice
742 mosfet
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC
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KMB6D0DN30QB
Unless10s
Fig10.
Fig11.
Fig12.
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IRF740
Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRF740/741/742/743
IRFP340/341/342/343
40/IRFP34Û
IRF741-IRFP341
IRF742/IRFP342
IRF743/IRFP343
IRF740
diode lt 341
IRFP340
LT 741 S
IRF740 400V 10A
power MOSFET IRF740
irf741
irf742
irf740 mosfet
IRFP341
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irf740
Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
Text: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF740/741/742/743
IRF740
IRF741
IRF742
IRF743
irf740 mosfet
power MOSFET IRF740
IRF740 ir
F7403
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um 741
Abstract: LS 741 a 741 j
Text: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRFS740/741/742/743
IRFS741
IRFS740
IRFS742
IRFS743
um 741
LS 741
a 741 j
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Untitled
Abstract: No abstract text available
Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRF740/741/742/743
IRFP340/341/342/343
F740/IRFP340
IRF741
/IRFP341
F742/IRFP342
F743/IRFP343
IRF740
IRFP340
IRF741
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1RF624
Abstract: No abstract text available
Text: 1RF624A Advanced Power MOSFET FEATURES B Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A M ax. @ VDS = 250V H Low R ds(on) •0-742 D s s 2
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1RF624A
IRF624A
1RF624
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ci 741
Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
Text: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance
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0D17374
IRFS740/741/742/743
O-220F
IRFS740/741/742/743
IRFS740
IRFS741
IRFS742
IRFS743
ci 741
tl 741
742 mosfet
CI 4017
LS 741
mosfet 350v 10A
te 4017
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TRANSISTOR wv4
Abstract: universal fet biasing curve graph LM343 Use High-Voltage Op Amps to Drive Power MOSFETs jerry steele LM12 PA03 PA04 PA07 PA12
Text: P r o te c t T h o se E xp en sive P o w e r OP Amps TT JERRY STEELE Apex Microtechnology Corp., 5980 North Shannon Rd., Tucson, AZ 85741; 602 742-8600. ybrid, power op amps can reliably deliver large power outputs as long as proper protection is • ■
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742r
Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
Text: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*
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F740/741/742/743
IRF740R/741R/74
IRF740,
IRF741,
IRF742,
IRF743
IRF740R,
IRF741R,
IRF742R
IRF743R
742r
F740
F742
F741
742-R
IRF P CHANNEL MOSFET 10a
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IN5223
Abstract: T1003 742p ERAB2-004
Text: y n y jx iy n D ual-O utput, S w itch -M o d e R eg u la to r + 5 V to ± 1 2 V o r± 1 5 V _ G eneral D escription The M A X 742 D C -D C c o n v e rte r is a c o n tro lle r for dual-outp u t pow er s u p p lie s in the 3W to 60W range. R elying on
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MAXL001
MAXC001
100nH
IN5223
T1003
742p
ERAB2-004
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Untitled
Abstract: No abstract text available
Text: ! 9 JAN 199 y i/iy jx iy i/i D u a l-O u tp u t, S w itc h -M o d e R e g u la to r + 5 V to ± 1 2 V o r ± 1 5 V _ G eneral Description _Features T h e M A X 742 D C -D C c o n v e rte r is a c o n tro lle r for d u a l-o u tp u t p o w e r s u p p lie s In th e 3W to 6 0 W ra n g e . R e lying on
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SSH6N80
Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
Text: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65
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SSH4N70
SSH5N70
SSH6N70
SSH8N70
SSH10N70
SSH12N70
SSH4N80
SSH5N80
SSH6N80
SSH8N80
SSH3N90
ssh12n80
ssh7n90
SSH11N90
ssh-6n80
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Untitled
Abstract: No abstract text available
Text: P re lim in a ry data Standard Power MOSFET IX T H IX T H P-Channel Enhancement Mode Avalanche Rated 10P50 11P50 Symbol Test Conditions V DSS T j = 25 °C to 150°C -500 V VDGR Tj = 25 °C to 150°C; RGS = 1 M£2 -500 V Vos V GSM Continuous +20 V Transient
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-500V
10P50
11P50
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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Untitled
Abstract: No abstract text available
Text: BEE D • 023fc.32Q Q0171b7 = « S I P SIPMOS N Channel MOSFET _ S IE M E N S / SPCLi BSS 138 X ^ Z S ' ^ S T _ S EM IC O N D S • SIPMOS - enhancement mode • Draln-source voltage Vt» = 50V • Continuous drain current Io = 0.22A • Drain-source on-resistance
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023fc
Q0171b7
Q62702-S566
G017171
033b3S0
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Untitled
Abstract: No abstract text available
Text: IRLS530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS=100V
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IRLS530A
T0-220F
300nF
7Tb4142
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D745
Abstract: No abstract text available
Text: IRFS720A Advanced Power MOSFET FEATURES bvdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA M ax. @ VDS= 400V ■ Lower RDS(ON) : 1.408 £2 (Typ.)
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IRFS720A
D745
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Untitled
Abstract: No abstract text available
Text: SFW/I9520 Advanced Power MOSFET FEATURES b v dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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SFW/I9520
-100V
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CD 1517
Abstract: IRFIBE20G
Text: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =
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IRFIBE20G
O-220
CD 1517
IRFIBE20G
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