1RF624
Abstract: No abstract text available
Text: 1RF624A Advanced Power MOSFET FEATURES B Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A M ax. @ VDS = 250V H Low R ds(on) •0-742 D s s 2
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1RF624A
IRF624A
1RF624
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1041A
Abstract: 1RF624
Text: IRF624A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A M ax. @ VOS = 250V ■ Low Ros(on) •' 0.742 S2 (Typ.)
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IRF624A
1041A
1RF624
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SSP60N06
Abstract: irf630 irf640 SSP50N06 ssp15n06
Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520
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O-220
IRFZ10
IRFZ20
SSP15N05
IRFZ30
IRFZ40
SSP50N05
SSP60N05
IRFZ14
IRFZ24
SSP60N06
irf630 irf640
SSP50N06
ssp15n06
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IRF624
Abstract: No abstract text available
Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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T-39-11
T0-220AB
C-239
IRF624,
IRF625
C-240
IRF624
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