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    SSH4N80 Search Results

    SSH4N80 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSH4N80 Samsung Electronics 800V 3.5 ? 4A N-channel power MOSFET Scan PDF
    SSH4N80AS Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSH4N80AS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSH4N80AS Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSH4N80AS Samsung Electronics 800V 3 ? 4.5A advanced N-channel power MOSFET Scan PDF

    SSH4N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSH4N80AS

    Abstract: No abstract text available
    Text: SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSH4N80AS SSH4N80AS

    SSH4N80AS

    Abstract: No abstract text available
    Text: SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSH4N80AS SSH4N80AS

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    Untitled

    Abstract: No abstract text available
    Text: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■


    OCR Scan     		PDF SSH4N80AS

    diode deg avalanche zo 150 44

    Abstract: 800V 40A mosfet SSH4N80 4511 MOSFET 250M SSH4N70 "VDSS 800V" 40A mosfet
    Text: N-CHANNEL POWER MOSFETS SSH4N80/70 FEATURES • Low er R d sio n • Improved inductive m g ge dn ess • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input cap acitance • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF SSH4N80/70 SSH4N80 SSH4N70 GD2633C1 0Q2fl34D diode deg avalanche zo 150 44 800V 40A mosfet 4511 MOSFET 250M "VDSS 800V" 40A mosfet

    c125t

    Abstract: SSH4N80
    Text: SSH4N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax. @ VM = 800V


    OCR Scan     		PDF SSH4N80AS c125t SSH4N80

    SSH4N80AS

    Abstract: DIODE 19 9
    Text: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■


    OCR Scan     		PDF SSH4N80AS SSH4N80AS DIODE 19 9

    SSH4N80AS

    Abstract: No abstract text available
    Text: Advanced SSH4N80AS Power MOSFET FEATURES BV — 800 V R ugged G ate O xide T e ch n o lo g y ^ D S o n = 3.0 Q. • Lo w e r Input C a pa citance lD = 4.5 A ■ Im proved G ate C harge ■ A valan che R ugged T ech n o lo g y ■ ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSH4N80AS SSH4N80AS

    Untitled

    Abstract: No abstract text available
    Text: SSH4N80AS Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology dss = ^D S o n = ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 jjA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSH4N80AS

    SSH6N80

    Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
    Text: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65


    OCR Scan     		PDF SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 SSH4N80 SSH5N80 SSH6N80 SSH8N80 SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A