ultrasonic weld
Abstract: No abstract text available
Text: 3mm LED CBI Circuit Board Indicator Ganged Arrays CBI Type 553-xxxx-0xx Standard View STANDARD POLARITY CATHODE ON RIGHT 9.06 [.36] 5.16 [.203] REF CARRIER BI-LEVEL ASSY 10.67 [.420] ULTRASONIC WELD 3.68 [.145] 90° 4.44 [.175] REF 2.80 [.103] MAX 2.54 [.100] TYP
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553-xxxx-0xx
553-xxxx-xxx
553-xxxx
553-22xx-1xx
553-22xx-100
553-xxxx-2xx
553-xxxx-200
DIN41494
ultrasonic weld
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Untitled
Abstract: No abstract text available
Text: WJ-RG2Q/SMRG20 W 10 TO 2000 MHz TO-8B LINEARIZED VOLTAGE CONTROLLED ATTENUATOR F : W¥< ilpi 'V ' ♦ ATTENUATOR AND LINEARIZER FULLY INTEGRATED IN ONE PACKAGE ♦ HIGH DYNAMIC RANGE ♦ WIDE BANDWIDTH ♦ LOW INSERTION LOSS f i b ; . Outline Drawings RG20
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WJ-RG2Q/SMRG20
50-ohm
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Untitled
Abstract: No abstract text available
Text: M60 Section 8 FREV2:11-2011 11/20/11 2:51 PM Page 129 ANTI-VIBRATION GROMMETS Anti-vibration grommets are designed for noise suppression in office or lab equipment. Additionally, they isolate sensitive instrumentation from unpredictable vibration and shock. The fingers of the grommets
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CQ 765
Abstract: CQ 637 CQ 818 FLK022
Text: FLK022XP : FLK022XV GaAs F ET u n dH E M T Chips ELECTRICAL CHARACTERISE CS Amb ent Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions 100 150 mA - 50 - mS -1.0 -2.0 -3.5 V -5 - - V 23 24 - dBm 6 7 - dB - 32 - % VdS = 5V, Ids = 65mA
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FLK022XP
FLK022XV
10pcs.
25jim
CQ 765
CQ 637
CQ 818
FLK022
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SXM 08
Abstract: APLMK SXA/M001 JST SXA-001T-P0.6L APLNC XMR-02V XMR-03V XMR-04V XMR-05V E60389 LR20812
Text: Crimp 2.5mm XM CONNECTOR Crimp style wire-to-wire connectors .098" pitch Features –––––––––––––––––––––––– • Inner-housing lock This inner-housing lock secures the plug to the receptacle and prevents accidental disconnection. The lock is protected and
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SXM-001T-P0
SXM-01T-P0
SXA-001T-P0
SXA-01T-P0
SXA/M001-06
SXA/M01-06
SXM 08
APLMK SXA/M001
JST SXA-001T-P0.6L
APLNC
XMR-02V
XMR-03V
XMR-04V
XMR-05V
E60389
LR20812
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FLK022XV
Abstract: No abstract text available
Text: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
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FLK022
Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Text: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
FLK022
GaAs FET HEMT Chips
FLK022XP
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tdk ferrite pc30
Abstract: PC40EE13-Z PC40EE22-Z EE-625 PC30EE30Z ferrite core tdk pc30 BE30-1110CP pc40EE25 BE-22-1110CP BE-13-1110CPS
Text: TDK Ferrite Cores / EE AND EF CORES X Q LLI < X \ C F B Fig. 1 Part No. U.S. lam. cores, DIN standard JIS Fig. Dimensions in mm inches A B C D E F H 3.0±0.1 .118± .004 1.0 .039 4.2±0.15 .165± .006 4.45 ±0.15 .175 ±.006 4.7 ±0.1 .185 ±.004 1.1 .043
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200mT,
BE-60-1112CP
BE-60-5112
BE-50
3/51/6-1112CPH
BE-62
3/62/6-1112CPH
150mT,
tdk ferrite pc30
PC40EE13-Z
PC40EE22-Z
EE-625
PC30EE30Z
ferrite core tdk pc30
BE30-1110CP
pc40EE25
BE-22-1110CP
BE-13-1110CPS
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funkschau
Abstract: RGN2004 EZ707 ERG IC 1118 rgn 1064 AZ4 philips Scans-048 RGN1504 telefunken rohren PP031
Text: S ta rk e rw e ite rte , v ö llig neu b e c rb e ite te A u fla g e l Q i / I / 4 0 I FUNKSCHAU-ROHRENTABELLE D ie F U N K S C H A U - R ö h re n to b e lle b rin g t in ih re m H o uptte il d ie a u s fü h rlic h e n D a te n un d S o c k e ls c h a lto n g e n
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108 046f
Abstract: 03e1 046F 044f 03C24 b 0334 046b
Text: ! % &
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06K0B
108 046f
03e1
046F
044f
03C24
b 0334
046b
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PDF
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03E1
Abstract: 00CF ISD33000 b0334 04D5
Text: ""### $
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microMELF dimensions
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components PACKA CKAGE GE OUTLINES A D D C B Cathode Mark DODO-41 DODO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE ∅ ∅ DIM A B C D DIMENSIONS INCHES
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DODO-35
DODO-41
DODO-15
DODO-41G
02NES
OTO-92L
050TYP
27TYP
OTO-92MOD
92MOD
microMELF dimensions
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Untitled
Abstract: No abstract text available
Text: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM
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DO-41
DO-35
DO-201AD
DO-35G
DO-15
050TYP
27TYP
O-92MOD
059TYP
50TYP
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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702 TRANSISTOR sot-23
Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE68800
NE68018-T1
NE68019-T1
NE68030-T1
NE68033-T1B
702 TRANSISTOR sot-23
mje 1303
common emitter bjt
transistor kf 508
IC CD 3207
BJT BF 331
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mje 1303
Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE68Q
NE68800
NE68018-T1
NE68019-T1
NE68030-T1
NE68033-T1B
mje 1303
transistor NEC D 882 p 6V
sg 3852
OPT500
2sc5008
15T09
model RB-30 S PT 100
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bticino
Abstract: bTicino Magic 1SL9891A00 1SL9143A00 1SLC800001D0201 6 canali 393 EZ 639 393 EZ 952 galvanised steel conduit 1SL9033A00
Text: Technical catalogue Plastic and metal trunking systems Plastic and metal trunking systems In consideration of modifications to Standards and materials, the characteristics and overall dimensions indicated in this catalogue may be considered binding only following
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1SLC800001D0201
1SLC800001D0201
bticino
bTicino Magic
1SL9891A00
1SL9143A00
6 canali
393 EZ 639
393 EZ 952
galvanised steel conduit
1SL9033A00
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1057 D21B
Abstract: 072d silabs 353 PCA B 790 0029 1588 RS232 062d b4420 07BC 0352 FCS 530 rfm 1207
Text: TRC101/102 FHSS By Bob Nelson 2/7/2007 Scope: This application will demonstrate the ease of implementing a FHSS radio when using the TRC101/2. This document will give you the schematic and firmware to implement the design. Keep in mind that the TRC101/2 will meet or exceed FCC
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TRC101/102
TRC101/2.
TRC101/2
400ms.
TRC101/102
1057 D21B
072d
silabs 353
PCA B 790 0029
1588 RS232
062d
b4420
07BC 0352
FCS 530
rfm 1207
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mje 1303
Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
NE68030-T1-A
NE68033-T1B-A1
NE68035
NE68039-T1-A1
NE68039R-T1
NE68800
mje 1303
BJT BF 331
ET 439
nec d 882 p transistor
transistor BI 342 905
682 SOT23 MARKING
transistor NEC D 587
transistor KF 517
NE AND micro-X
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BJT BF 331
Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
24-Hour
BJT BF 331
mje 1303
transistor "micro-x" "marking" 102
transistor MJE -1103
NE68019
915 transistor
355 mje 1102
2SC5013
NE68018
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014e1
Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
014e1
transistor NEC D 882 p 6V
mje 1303
transistor BF 414
BJT IC Vce
NE AND micro-X
2SC5008
2SC5013
NE68018
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transistor BF 697
Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE
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NE680
NE68800
NE68018-T1-A1
NE68019-T1-A1
NE68030-T1-A1
transistor BF 697
transistor kf 469
transistor BI 342 905
682 SOT23 MARKING
K 2645 transistor
038N
BJT BF 331
KF 569
transistor "micro-x" "marking" 102
AF 1507
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transistor bf 968
Abstract: No abstract text available
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O
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NE680
NE68030-T1
NE68033-T1B
NE68035
NE68039-T1
NE68039R-T1
transistor bf 968
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mje 1303
Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
NE68039-T1
NE68039R-T1
mje 1303
transistor NEC D 882 p 6V
BJT BF 331
mje 3004
nec d 882 p transistor
2SC5008
68018
transistor KF 507
2SC5013
NE68000
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