Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1415 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended
|
OCR Scan
|
PDF
|
F1415
724100T
00002QÃ
7241GCH
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended
|
OCR Scan
|
PDF
|
F1260
724100T
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2002 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance
|
OCR Scan
|
PDF
|
F2002
DV36-2V
1110Avenida
|
Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended
|
OCR Scan
|
PDF
|
F2046
\GS12V
1110AvenidaAcaso,
724100e
|