L2083
Abstract: No abstract text available
Text: polyfet rf devices L2083 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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L2083
724100e]
0000EÃ
L2083
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended
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F2047
72410m
1110AvenidaAcaso,
72mDD1
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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F1076
J060-
1110AvenidaAcaso,
7241DDT
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Untitled
Abstract: No abstract text available
Text: polyfet if devices F1069 PATENTED GOLD METALIZED General Description Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance
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F1069
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended
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F1070
1110AvenidaAcaso,
7241QCH
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1208 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance
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F1208
1110Avenida
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1107 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended lifetime. Low output capacitance
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F1107
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2001 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance
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F2001
\G813V
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2211 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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F2211
1110AvenidaAcaso,
724100e
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2246 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1” 1 process features gold metal for greatly extended
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F2246
1110AvenidaAcaso,
7241DQÂ
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance
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F1520
\Q612V
1110AvenidaAcaso,
724100e
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1516 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended lifetime. Low output capacitance
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F1516
\GS12V
1110AvenidaAcaso,
805J-484-3393
00QD21S
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1210 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended
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F1210
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance
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F9012
VGS12V
1110AvenidaAcaso,
72mOCH
D0D0273
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices P125 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"*"1 process features gold metal for greatly extended
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1110Avenida
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended
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F2201S
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended
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F2202S
1110AvenidaAcaso,
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2002S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended
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F2002S
1110Avenida
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended
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F1077
1110AvenidaAcaso,
7241am
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1535 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"11,1 process features gold metal for greatly extended lifetime. Low output capacitance
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F1535
1110AvenidaAcaso,
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended
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F1222
1110AvenidaAcaso,
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended
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F1207
060QfeOâ
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended
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F1001C
1110AvenidaAcaso,
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended
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F1006
1110Avenida
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