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    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1066 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


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    PDF F1066 7B4100C

    300D

    Abstract: 400M L2008
    Text: polyfet rf devices L2008 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF L2008 72mOCH 300D 400M L2008

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2004 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


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    PDF F2004 1110AvenidaAcaso,