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    pin diagram of 74112

    Abstract: ttl 74112 pin diagram of ttl 74112 3B522
    Text: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The


    OCR Scan     		PDF KM684002A KM684002A- KM684002A KM684002AJ 36-SOJ-4QO 1024x8 0D3bS24 36-SOJ-4QO pin diagram of 74112 ttl 74112 pin diagram of ttl 74112 3B522

    Lb 598 d

    Abstract: KM616V4002A 71L414E
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.


    OCR Scan     		PDF 616V4002A 256Kx KM616V4002A- KM616V4002A-17 KM616V4002A I/O16 KM616V4002AJ 44-SOJ-400 I/O9-I/O18 March-1997 Lb 598 d 71L414E

    Untitled

    Abstract: No abstract text available
    Text: KMM366F400BK KMM366F41OBK DRAM MODULE K M M 366F400B K & KM M 366F410BK ED O Mode w ithout buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM366F400BK KMM366F41OBK 366F400B 366F410BK 4Mx64 KMM366F40 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372V213BK/BS KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V213B consists of nine CMOS


    OCR Scan     		PDF KMM372V213BK/BS KMM372V213BK/BS 2Mx72 KMM372V213B 300mil KMM372V213BK cycles/32ms, KMM372V213BS

    Untitled

    Abstract: No abstract text available
    Text: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C1003DT 71b4142 44C1003DT) 7Rb4142

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required


    OCR Scan     		PDF KS0122 KS0122 7Tb4145 Q03D041 DG3DG42 100-QFP-1420C

    71L414E

    Abstract: KIVI6164002A KM6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20
    Text: KM6164002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 *‘ (Max.) The KM6164002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The


    OCR Scan     		PDF KIVI6164002A 256Kx KM6164002A I/O16 KM6164002AJ 44-SOJ-400 304-bit 71L414E KIVI6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20

    71L414E

    Abstract: TA10E
    Text: CMOS SRAM KM62256CLE-LV 32Kx8Bit Extended Voltage & Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Tem perature R ange : -2 5 °C to 85°C • Extended Operating Voltage : 3 .0 -5 .5 V T h e K M 62 2 5 6C L E -L V is a 262,144-bit high-speed Static


    OCR Scan     		PDF KM62256CLE-LV 32Kx8Bit 100ns 28-pin 0D21315 71L414E TA10E

    km44v4104bk

    Abstract: KM44C4104
    Text: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM44V4 KM44V4104BK DD3514L 7Tb4142 D03S147 km44v4104bk KM44C4104

    Untitled

    Abstract: No abstract text available
    Text: KM4216C/V258 CMOS VIDEO RAM 2 5 6 K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


    OCR Scan     		PDF KM4216C/V258 70ns2 SQ0-SQ15 SQ0-SQ15 71b4142 D22312

    mfj 752

    Abstract: taa 723 300MIL
    Text: KM44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: KM44C4104A/AL/ALL/ASL-5 tBAC tCAC tRC tHPC 50ns 13ns 90ns 20ns KM44C4104A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4104A/AL/ALL/ASL-7


    OCR Scan     		PDF KM44C4104A/AL/ALL/ASL KM44C4104A/AL/ALL/ASL-5 KM44C4104A/AL/ALL/ASL-6 110ns KM44C4104A/AL/ALL/ASL-7 130ns KM44C4104A/AL/ALL/ASL-8 150ns cycles/32ms cycles/128ms mfj 752 taa 723 300MIL

    44V4100

    Abstract: No abstract text available
    Text: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF KM44V4100BK 16Mx4, 512Kx8) 7TL414E 44V4100