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    Coilcraft Inc MVR1271C-162MLC

    Power Inductors - SMD 1.65uH Shld 20% 17A 2.53mOhms
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    Mouser Electronics MVR1271C-162MLC 52
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    KEMET Corporation ALS71C163QS450

    Aluminum Electrolytic Capacitors - Screw Terminal 450V 16000uF 20% 20000Hrs
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    TE Connectivity C16894-000

    Heat Shrink Cable Boots & End Caps 301A034-100/180-0
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    TE Connectivity C16833-000

    Circular MIL Spec Strain Reliefs & Adapters TX54SC00-0804
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    KEMET Corporation ALS71C164QC040

    Aluminum Electrolytic Capacitors - Screw Terminal 40V 160000uF 20% 20000Hrs
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    71C16 Datasheets (2)

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    71C16100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    71C16401 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    71C16 Datasheets Context Search

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    AN2426

    Abstract: GM71C16400AJ6 GM71C16400
    Text: 71C16400A LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CMOS DYNAM IC RAM Description Pin Configuration The GM 71C16400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. 71C16400A has realized higher density, higher performance and various functions by utilizing advanced CMOS


    OCR Scan     		GM71C16400A 71C16400A GM71C16400A 6400A familie71C16400A AN2426 GM71C16400AJ6 GM71C16400 PDF

    AN2426

    Abstract: No abstract text available
    Text: 71C16100A LG Semicon Co.,Ltd. 16,777,216 W ORDS x I BIT CMOS DYNAMIC RAM Pin Configuration Description The GM 71C16100A is the new generation dynamic RAM organized 16,777,216 x 1 Bit. GM 71C16100A has realized higher density, higher performance and various functions by utilizing advanced CMOS


    OCR Scan     		GM71C16100A 71C16100A GM71C16100A 8888M AN2426 PDF

    Untitled

    Abstract: No abstract text available
    Text: G M 71C16100A GoldStar 16,777,216 WORDSx 1BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description T he GM 71C16100A is the new generation d ynam ic RAM organized 1 6 ,7 7 7 ,2 1 6 x 1 Bit. G M 71C16100A has realized higher density, higher perform ance an d various functions by


    OCR Scan     		71C16100A 71C16100A GM71C16100A Q00377G PDF

    Untitled

    Abstract: No abstract text available
    Text: iL rG SWe miri n n c o n IM 71C16403C/CL 4,194304 w o r d s x 4 b i t C o .,L td . CM OS DYNAM IC RAM Description Features The 71C16403C/CL is the new generation dynamic RAM organized 4,194,304 w ords x 4 bit. GM 71C16403C/CL has realized higher density, higher performance and various


    OCR Scan     		GM71C16403C/CL 71C16403C/CL GM71C16403C/CL rlh24 PDF

    1GM7

    Abstract: GM7IC clj60 clts GM71V64400 gm71c 65T6 L7800CT GM71C4403C
    Text: MEMORY LINE-UP 1. DRAM I 4M 50ns 60ns l4Mxl •70 G M 71C4100CJ/CLJ-60 |— GM71C4100CJ- GM 7ÌC41000EJ-60 |— |G M 71C 410 q1 I 70 GM7IC4400CJ/CLJ-60 |— | GM71C4400CJ-70 GM71C4403CJ/CLJ-60 |—\ OM71C4403CJ-70 GM 71C4400EJ-60 |— | GM71C4400EJ-70 G M 71C4403E J-60


    OCR Scan     		71C4100CJ/CLJ-60 C41000EJ-60 GM71C4100CJ- GM7IC4400CJ/CLJ-60 GM71C4403CJ/CLJ-60 71C4400EJ-60 71C4403E GM71C4400CJ-70 OM71C4403CJ-70 GM71C4400EJ-70 1GM7 GM7IC clj60 clts GM71V64400 gm71c 65T6 L7800CT GM71C4403C PDF

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8 PDF

    71C16400

    Abstract: 71c16
    Text: 71C16400C/CL LG Semicon Co.,Ltd. 4,194,304 W ORDS x 4 BIT CM OS DYNAM IC RAM Description Features The G M 71C 16400C/CL is the new generation dynamic R A M organized 4,194,304 words x 4 bit. G M 71C 16400C/CL has realized higher density, higher performance


    OCR Scan     		GM71C16400C/CL 16400C/CL 71C16400C/CL 71C16400 71c16 PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 PDF

    Untitled

    Abstract: No abstract text available
    Text: 71C16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 71C 16400A is the new generation dynamic RAM organized 4 ,1 9 4 ,3 0 4 x 4 Bit. G M 71C 16400A has realized higher density, higher perform ance and various functions by


    OCR Scan     		GM71C16400A 6400A 71C16400A DGQ37 PDF

    GM71C4400BJ70

    Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
    Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80


    OCR Scan     		71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256 PDF