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    711D Search Results

    711D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MK3711DMLFTR Renesas Electronics Corporation Low Cost 8MHz to 16MHz 3.3V VCXO Visit Renesas Electronics Corporation
    MK3711DMLF Renesas Electronics Corporation Low Cost 8MHz to 16MHz 3.3V VCXO Visit Renesas Electronics Corporation
    U95T1711D1A Amphenol Communications Solutions ULTRAPORT QSFP CAGE ASSY Visit Amphenol Communications Solutions
    U90G4711D3A Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, QSFP 1X4 PIN13.5 HSLP ASSY. Visit Amphenol Communications Solutions
    U90H1711D0A Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, QSFP 22.03MM HS 1X1. Visit Amphenol Communications Solutions
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    711D Price and Stock

    onsemi NCV887711D1R2G

    IC REG CTRLR BOOST 8SOIC
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    DigiKey NCV887711D1R2G Cut Tape 2,498 1
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    NCV887711D1R2G Digi-Reel 2,498 1
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    Newark NCV887711D1R2G Cut Tape 4,950 1
    • 1 $2.15
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    • 1000 $0.991
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    NCV887711D1R2G Reel 2,500
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    Ameya Holding Limited NCV887711D1R2G 2,993
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    EBV Elektronik NCV887711D1R2G 53 Weeks 2,500
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    Texas Instruments DRV8711DCPR

    IC MTR DRV BIPOLR 8-52V 38HTSSOP
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    DigiKey DRV8711DCPR Reel 2,000 2,000
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    Mouser Electronics DRV8711DCPR 7,665
    • 1 $4.49
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    Bristol Electronics DRV8711DCPR 50
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    Win Source Electronics DRV8711DCPR 18,000
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    TDK Corporation HHM1711D1

    BALUN 2.4GHZ-2.5GHZ 50/100 0603
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    DigiKey HHM1711D1 Cut Tape 1,690 1
    • 1 $0.73
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    HHM1711D1 Digi-Reel 1,690 1
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    Chip 1 Exchange HHM1711D1 10,400
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    Texas Instruments BQ294711DSGT

    IC BATT PROT LI-ION 2-4CEL 8WSON
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    DigiKey BQ294711DSGT Cut Tape 341 1
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    BQ294711DSGT Digi-Reel 341 1
    • 1 $1.07
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    BQ294711DSGT Reel 250 250
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    Rochester Electronics BQ294711DSGT 36,750 1
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    TME BQ294711DSGT 1
    • 1 $1.06
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    Ameya Holding Limited BQ294711DSGT 1,900
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    Win Source Electronics BQ294711DSGT 14,226
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    Texas Instruments UCC28711D

    IC OFFLINE SWITCH FLYBACK 7SOIC
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    DigiKey UCC28711D Tube 317 1
    • 1 $1.56
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    Mouser Electronics UCC28711D 497
    • 1 $1.56
    • 10 $1.15
    • 100 $0.881
    • 1000 $0.83
    • 10000 $0.748
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    711D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


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    bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948 PDF

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


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    -0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909 PDF

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B PDF

    X3A-BFT93

    Abstract: BFQ23 philips bfq23 BFQ24 BFT93
    Text: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole


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    X3A-BFT93 BFQ23 BFQ24 BFT93 X3A-BFT93 URV-3-5-52/733 BFQ23 philips bfq23 BFQ24 BFT93 PDF

    ht 25 transistor

    Abstract: BUK638-500B
    Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    BUK638-500B 711DflSb ODb431S ht 25 transistor PDF

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


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    BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10 PDF

    thyristor TAG 103 X

    Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
    Text: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.


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    0L23SÃ BT150 O-220AB O-22QAB M2678 thyristor TAG 103 X thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400 PDF

    D441

    Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector


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    BD433/435/437/439/441 O-126 BD434, BD436, BD438, BD440 BD442 711DflSb BD433 D441 BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437 PDF

    MCL T1-1

    Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
    Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM


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    711002b G0114SS PCF84C121 PCF84C121. PCF84C121 PCF84C12. 7110fl2b MCL T1-1 MAB8048 PCF84C12 PCF84C121P PCF84C121T S020 PDF

    BUK637-400B

    Abstract: No abstract text available
    Text: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable


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    BUK637-400B BUK637-400B PDF

    LTN211

    Abstract: LXL211-G
    Text: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 711DÖ2b DGSTlbM 752 bOE D LXL211-G PHIN rW /-?° Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 3 .3 x 6 3 .5 mm Lit area dim ensions


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    711Dfl2b LXL211-G LTN211 7Z2293S 100VRMS 60smax. PDF

    philips zener diode c24

    Abstract: SOD-18 philips bzx70 zener diode c43 BZX70 philips zener diode c12 BZX70-C7V5 DIODE BZX70 BZX70-C75 c22 zener philips 43c56
    Text: BZX70 SERIES MAINTENANCE TYPE P H IL IP S J ib E _ p INTERNATIONAL • 711D6Sb 0 am b 7 b ^ h37 M P H I N T - O h l3 REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.


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    BZX70 711D6Sb BZX70-C7V5 BZX70-C75. OD-18. philips zener diode c24 SOD-18 philips bzx70 zener diode c43 philips zener diode c12 DIODE BZX70 BZX70-C75 c22 zener philips 43c56 PDF

    m3303

    Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
    Text: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES


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    711DflSb BYR34 T-03-/7 711002b T-03-17 m3303 10a ultra fast diode M3306 BYR34-500 M3299 PDF

    24-character

    Abstract: C100 C101 C120 LTA342F-11 LTA342R-11
    Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 bO E D • 711DÔEb 00S700fi LTA3 4 2 T4E IPHIN 7- V /- 3 S Liquid Crystal Display DEVICE DESCRIPTION The LTA342 is a 24-character, 2-line dot matrix display. Typical applications include hand held equipment and


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    711065b LTA342 LTA342 24-character, 711Gfl2b 0057D1B 24-character C100 C101 C120 LTA342F-11 LTA342R-11 PDF

    P3Q22V10-7A

    Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
    Text: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES


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    711DflEb P3Q22V10â P3Q22V10-7 100mA 24-Pin P3Q22V10-7N 0410D P3Q22V10-7A 0401F P3Q22V10-7D Pal programming 22v10 PDF

    74F377

    Abstract: 74F377A F373 F374
    Text: PHILIPS INTERNATIONAL , - SflE D . , v , ^ nv« . n « . ••vuuvw ■ 711D0Eb 0052174 045 « P H I N rroauci«pvem vw m ni Octal D-type flip-flop with enable 74F377/377A FEATURES • High impedance inputs for reduced loading 20pA in Low and High states


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    74F377/377A F377A 74F377 500ns 74F377A F373 F374 PDF

    amplifier blw96

    Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
    Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents


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    BLW96 7110fl2b DDb3453 amplifier blw96 BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414 PDF

    J108

    Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
    Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)


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    711Dfl2b PZFJ108/PZFJ109/PZFJ110 PZFJ108) -SOT223 OT223 MBB114 PZFJ109) PZFJ110) 711082b J108 J109 J110 PZFJ108 PZFJ109 PZFJ110 PDF

    THYRISTOR ts 602

    Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
    Text: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .


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    BYX30 T-03-Ã 711DfiSh 0041b04 BS9333-F002 BYX30-200 BYX30-600 BYX30-200R BYX30-600R. Non-repetiti10^ THYRISTOR ts 602 BYX31 BYX30-600R INVERTER 50 kW BYX30-600 IEC134 DM51 PDF

    k426

    Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
    Text: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode


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    BUK426-50A/B K426-60A/B -39-i/ PINNING-SOT199 BUK426 k426 bu 515 BUK426-50A transistor 03e Transistor Bo 17 PDF

    BU603

    Abstract: USA060-1
    Text: 11 PHILIPS INTERNATIONAL 4SE D B 711Dfi2ti ODBOflfl'i 1 Œ P H I N BU603 T'33-/3 — SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.


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    711002t BU603 T-33-/3 O-220 F33M3 T-33-13 BU603 USA060-1 PDF

    RZB12250Y

    Abstract: No abstract text available
    Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.


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    RZB12250Y FO-57C. RZB12250Y PDF

    BY206

    Abstract: BZY88-C3V3 ADB320 BLW32 bzy88c3v3
    Text: bSE D B 711D Û 2L. □□b320S 334 B P H IN BLW32 PHILIPS I N T E R N A T I O N A L _ _ U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear u .h .f. am plifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation


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    b320S BLW32 711062b DDb3213 7Z77707 7Z77708 BLW32 BY206 BZY88-C3V3 ADB320 bzy88c3v3 PDF

    BTW42-600R

    Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
    Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase


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    DDbS43i BTW42 BTW42â 1000R. 1000r BTW38 BTW42-600R TSM 1250 1000R mml 600 600R BTW42-600RC PDF