BFQ291
Abstract: BFQ290
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product
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33-oS
BFQ291
BFQ290.
BFQ291
OT172A1
00M5b74
MBC869
OT172A1.
BFQ290
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BFS21
Abstract: BFS21A SOT52 PHILIPS 1980
Text: Il PHILIPS INTERNATIONAL 41E D • . 7110fl2Li Q05bE3cl ô HiPHIN MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channei silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.
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711002b
BFS21
BFS21A
500MA
500/iA
BFS21A
SOT52
PHILIPS 1980
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BDT93
Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.
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BDT91
BDT93
BDT95
BDT92,
BDT94
BDT96.
BDT91
BDT93
711002b
BDT95
BDT92
BDT96
3313
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BD827
Abstract: BD830 bd829 BD825 BD826 BD828 IEC134
Text: BD825 BD827 BD829 PHILIPS INTERNATIONAL SbE D 7110fl2Li G043Q12 HIPHIN SILICON PLANAR EPITAXIAL POW ER TRANSISTO RS General purpose N-P-N transistors, in T 0 -2 0 2 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits.
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BD825
BD827
BD829
T0-202
BD826,
BD828
BD830.
BD830
bd829
BD826
IEC134
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TG 56369
Abstract: fast diod 5A Ultra Fast Recovery Double Rectifier Diodes BYV32 IEC134 RECTIFIER DIODES PHILIPS 20/TG 56369
Text: BYV32 SERIES PHILIPS INTERNATIONAL SLE D • 7110a2b Q0413Sfl C 7T ■ P H I N T - ¿ > 3 - 1 ^ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. T hey are intended for
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BYV32
7110fl2b
GD413SÃ
DQ413b7
M2488
M1257
TG 56369
fast diod 5A
Ultra Fast Recovery Double Rectifier Diodes
IEC134
RECTIFIER DIODES PHILIPS
20/TG 56369
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NE5560N
Abstract: NE5560 Ferroxcube 3C8 se5560 NES560D 6 pin smps power control ic core 3c8 sawtooth generator SE5560F NE5560D
Text: P hilips Sem iconductors Linear P roducts P roduct sp ecifica tio n Switched-mode power supply control circuit NE/SE5560 PIN CONFIGURATION DESCRIPTION The NE/SE5560 is a control circuit for use in switched-mode power supplies. This single monolithic chip incorporates all the control and
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NE/SE5560
NE5560/SE5560
NE/SE5S60
7110fl2Li
NE5560N
NE5560
Ferroxcube 3C8
se5560
NES560D
6 pin smps power control ic
core 3c8
sawtooth generator
SE5560F
NE5560D
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CI SG3524
Abstract: SG3524 pwm INVERTER SG3524S CI SG3524 current limiting 8 dip smps circuits smps control sg3524 smps
Text: Philips Semiconductors Linear Products Product specification SMPS control circuit SG3524 DESCRIPTION PIN CONFIGURATION This monolithic integrated circuit contains all the control circuitry for a regulating power supply inverter or switching regulator. Included in
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SG3524
16-pin
SG3524
200mV
7110fl2Li
CI SG3524
SG3524 pwm INVERTER
SG3524S
CI SG3524 current limiting
8 dip smps circuits
smps control
sg3524 smps
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BAX14
Abstract: general purpose diode
Text: Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX14 is a general purpose switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27
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BAX14
BAX14
DO-35)
010flb31
general purpose diode
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Rtz qe
Abstract: bt dp01 84C440 PWM32 PWM42 84C640 84C844 op07 oscillator PCA84C641 84C443
Text: Philips Semiconductors Product specification 8-bit microcontrollers with O S D and V S T o a i ^ a a w o ^ o v iv 84C 44X ; 84C 64X; 84C 84X 1 . FEATURES 2. GENERAL DESCRIPTION 1.1 84CXXX kernel The 84C440, 84C441, 84C443, 84C444, 84C640, 84C 641, 84C643, 84C644, 84C840, 84C 841, 84C843
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84CXXX
42-lead
84C44X;
84C64X;
84C84X
MCD431
711G62b
Rtz qe
bt dp01
84C440
PWM32
PWM42
84C640
84C844
op07 oscillator
PCA84C641
84C443
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transistor t07
Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures
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BFQ67T
OT416
SC-75)
OT416.
1BFQ67T
MRC050
7110fl5b
transistor t07
mar-06 transistor
"MARKING CODE V2"
"marking Code" V2
marking code V2
BFQ67T
SC-75
transistor 15 GHz
transistor 20 dB 14 ghz
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transistor smd LC 77
Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Text: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
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BLT81
OT223
OT223
711002b
OT223.
transistor smd LC 77
D103D
smd transistor 2x5
smd transistor ne c2
BLT81
TRANSISTOR SMD catalog
smd ic 611
SMD ic catalogue
UHF POWER TRANSISTOR
SMD Transistor 1c
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SDIP32
Abstract: TEA0678 TEA0678T
Text: FEATURES GENERAL DESCRIPTION • Dual noise reduction NR channels • Head pre-amplifiers • Reverse head switching • Automatic Music Search (AMS) • Mute position • Equalization with electronically switched time constants • Dolby reference level = 387.5 mV
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TEA0678
01Q4bl3
SDIP32
TEA0678T
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Linear Products Product specification EIA-232-D/V.28 driver/receiver MC145406 DESCRIPTION PIN CONFIGURATION The MC145406 is a silicon-gate CMOS 1C that combines 3 drivers and 3 receivers to fulfill the electrical specifications of standards
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EIA-232-D/V
MC145406
MC145406
EIA-232-D
EIA-232-D
MC145406.
EIA-232-D/CCITT
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DL 711 PHILIPS
Abstract: BY206 BLW34 BZY88-C3V3 BZY88C3V3 philips dl 711 cc cv2 100 170 mml 600 TRANSISTOR BLW34 preset potentiometer
Text: bSE T> 711DÖ2b 0Db35S3 35T • PHIN BLW34 P H ILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. am plifiers fo r television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation
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0Db35S3
BLW34
7Z77719
BLW34
DL 711 PHILIPS
BY206
BZY88-C3V3
BZY88C3V3
philips dl 711
cc cv2 100 170
mml 600
TRANSISTOR BLW34
preset potentiometer
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CDA 10.7 MC 40
Abstract: dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712
Text: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM
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TEA5712;
TEA5712T
/TH0T76
711002b
CDA 10.7 MC 40
dts circuit board
BB112 equivalent
variable coils toko s18
CDA 10.7
TEA5712T
bb112
murata SFE 10.7
FM radio CIRcuit DIAGRAM
TEA5712
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD 8OC SMD packages. The series consists of 43 types with nominal working
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PMLL5225B
PMLL5267B
SQD80C)
711002b
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16 QAM receiver block diagram
Abstract: amplifier equalizer mixer connection diagram receiver QAM schematic diagram digital clock and carrier recovery 32 QAM BER SER 32QAM modulation TDA8045H 64 QAM diagram 16 qam demodulator carrier recovery
Text: Preliminary specification Philips Semiconductors QAM demodulator TDA8045 FEATURES • Different modulation schemes: 4, 16, 32 and 64-QAM • Digital demodulator and Square-Root Raised-Cosine Nyquist filter with roll-off of 20% • High performance adaptive equalizer no training
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TDA8045
64-QAM
711002b
16 QAM receiver block diagram
amplifier equalizer mixer connection diagram
receiver QAM schematic diagram
digital clock and carrier recovery
32 QAM
BER SER 32QAM modulation
TDA8045H
64 QAM diagram
16 qam demodulator
carrier recovery
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C-BUS Microcontroller Interface
Abstract: 940622 07 DC SERVO MOTOR CONTROL circuit metal detector diagram PI QFP64 SAA7345 SAA7374 TDA1301 TDA1301T IEC958
Text: Philips Semiconductors Preliminary specifications Low voltage digital servo processor and Compact Disc decoder CD7LV CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION
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SAA7374
711062b
00ci7b0b
C-BUS Microcontroller Interface
940622 07
DC SERVO MOTOR CONTROL circuit
metal detector diagram PI
QFP64
SAA7345
SAA7374
TDA1301
TDA1301T
IEC958
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BF1100
Abstract: BF1100R 71hwfc dual-gate
Text: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
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BF1100;
BF1100R
OT143
OT143R
OT143.
OT143R.
71HWfc,
BF1100
BF1100R
71hwfc
dual-gate
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UHF amplifier module
Abstract: power BJT gp bjt BGY205
Text: Philips Semiconductors Objective specification UHF amplifier module BGY205 FEATURES DESCRIPTION • Single 6 V nominal supply voltage The BGY205 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit
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BGY205
BGY205
PINNING-SOT321B
OT321B.
UHF amplifier module
power BJT
gp bjt
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54ABT245
Abstract: 54ABT374 54ABT646 diode a3u
Text: Product specification Philips Semiconductors Military Advanced BiCMOS Products Octal bus transceiver/register 3-State 54ABT646 DESCRIPTION FEATURES The 54ABT646 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high
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54ABT646
54ABT245
54ABT374
-24mA
500mA
54ABT646
54ABT
500ns
diode a3u
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TDA85610
Abstract: tda8561q diagram car amplifier circuit diagram TDA8561Q 200 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM 2D70 car power amplifier tda8561q
Text: Philips Semiconductors Preliminary specification 2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier TnAft^Rin UASbbl U FEATURES • Reverse polarity safe • Requires very few external components • Electrostatic discharge protection • High output power
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UA85b1
TDA8561Q
MGA720
v1994
711002b
00fl20cJ5
TDA85610
tda8561q diagram
car amplifier circuit diagram
TDA8561Q
200 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM
2D70
car power amplifier tda8561q
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Diode T2D od
Abstract: mab8400 MAB8048 PC10 PC11 PCD33XXA
Text: Philips Semiconductors Product specification 8-bit telecom microcontrollers PCD33XXA Family CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3
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PCD33XXA
7110fl5fc,
00S3433
Diode T2D od
mab8400
MAB8048
PC10
PC11
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rbs 6102
Abstract: rbs 6101 telecom rbs 6102 MAB8048 MAB8400 PC10 PC11 philips capacitors FE AMA schematic diagram cpl inverter rbs 6101 description
Text: Product specification Philips Semiconductors PCD33xxA Family 8-bit telecom microcontrollers CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3
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PCD33xxA
7110fi2b
rbs 6102
rbs 6101
telecom rbs 6102
MAB8048
MAB8400
PC10
PC11
philips capacitors FE AMA
schematic diagram cpl inverter
rbs 6101 description
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