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    6V 33 DIODE Search Results

    6V 33 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    6V 33 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener DIODE A112

    Abstract: tpo610l flame detector tokin 2N4391 MOTOROLA mbrs130lt data sheet nimh solar LTC1659 solar voltage regulator and battery charger circuit tpo610
    Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products December 1997 Product of the Month Step-Down DC/DC Converter Operates from Single Li-Ion Cell VIN 2.7V TO 6V + CIN† EFFICIENCY % 95 90 85 80 VIN = 3.5V L1 = 33µH VOUT = 2.5V


    Original     		PDF 270pF LTC1626 500mA LTC1541 LTC1541, 1-800-4-LINEAR zener DIODE A112 tpo610l flame detector tokin 2N4391 MOTOROLA mbrs130lt data sheet nimh solar LTC1659 solar voltage regulator and battery charger circuit tpo610

    mevc

    Abstract: 080L
    Text: SENSITRON SEMICONDUCTOR SAF27N10-080L TECHNICAL DATA DATA SHEET 4272, REV. D RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET


    Original     		PDF SAF27N10-080L mevc 080L

    HI155G1S02X

    Abstract: HI155G1S14X HI155G1S07X
    Text: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability


    Original     		PDF lcc/1550-hi-series HI155G1S02X HI155G1S14X HI155G1S07X

    HI155G1S02X

    Abstract: HI155G1S14X HI155G HI155G1S07X
    Text: High Intensity Pulsed Laser Diodes 1550 HI-Series FEATURES • High intensity output • Low divergence  0.5 W/A efficiency  Excellent temperature stability  Hermetic and custom designed package  High Reliability APPLICATIONS  Eye safe range finding


    Original     		PDF 1550-hi-series HI155G1S02X HI155G1S14X HI155G HI155G1S07X

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability


    Original     		PDF

    6v 33 diode

    Abstract: LTC5507ES6 diode schottky A28 LT5503
    Text: LTC5507 100kHz to 1GHz RF Power Detector FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output


    Original     		PDF LTC5507 100kHz 34dBm 14dBm 1000MHz LT5503 120MHz LT5506 500MHz 6v 33 diode LTC5507ES6 diode schottky A28 LT5503

    DIODE RF DETECTOR

    Abstract: LTC5507 LTZX audio envelope detector diode LTC5508 LTC1757A LTC1758 LTC1957 LTC4400 LT5503
    Text: LTC5507 100kHz to 1GHz RF Power Detector U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output


    Original     		PDF LTC5507 100kHz 34dBm 14dBm 1000MHz LT5503 120MHz LT5506 500MHz DIODE RF DETECTOR LTC5507 LTZX audio envelope detector diode LTC5508 LTC1757A LTC1758 LTC1957 LTC4400 LT5503

    DIODE RF DETECTOR

    Abstract: audio envelope detector diode PEAK DETECTOR LTC5507 MO-193 5507 pi metal detector metal detector schematic 28-22-16 envelope detector
    Text: Final Electrical Specifications LTC5507 100kHz to 1GHz RF Power Detector May 2002 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to


    Original     		PDF LTC5507 100kHz 34dBm 14dBm 1000MHz 100mA LTC3401 LTC3402 LTC3404 DIODE RF DETECTOR audio envelope detector diode PEAK DETECTOR LTC5507 MO-193 5507 pi metal detector metal detector schematic 28-22-16 envelope detector

    BATWING sop-16

    Abstract: micro choke 820 uH 140 mA TTWB-2-B RF2320
    Text: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2320 is a general purpose, low-cost, high-linearity


    Original     		PDF RF2320 RF2320 OP-16 1000MHz, BATWING sop-16 micro choke 820 uH 140 mA TTWB-2-B

    Untitled

    Abstract: No abstract text available
    Text: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2320 is a general purpose, low-cost, high-linearity


    Original     		PDF RF2320 RF2320 OP-16 1000MHz, 2500MHz.

    Untitled

    Abstract: No abstract text available
    Text: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description


    Original     		PDF RF2320 RF2320 OP-16 1000MHz, 2500MHz.

    ST 12 55C

    Abstract: C36V 55C 2v4
    Text: DATA SHEET ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 47 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) • Both normal and Pb free product are available :


    Original     		PDF ZMM55-C2V4 MINI-MELF/LL-34 500mW MIL-STD-202E, ST 12 55C C36V 55C 2v4

    DNA 1002

    Abstract: rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode
    Text: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)


    Original     		PDF Fiel70 D-25578 DNA 1002 rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode

    ADL65055SA2

    Abstract: No abstract text available
    Text: APC Laser Diode TM ADL-65055SA2 2007/03/07 Ver. 2.0 APC Laser Diode TM Perfect Solution For Auto Power Controlled Laser Diode By converting the external APC circuit board into an ASIC, we package the APC circuit into a traditional TO-can together with the laser chip. From now on, single package APC function


    Original     		PDF ADL-65055SA2 ADL-65055SA2 650nm ADL65055SA2

    marking Z58

    Abstract: z58 diode Zener 9v 201 zener diode sot23 ZX84C z58 zener diode zener diode zx 12 zener 8v diode MARKING z57 ZX84-B
    Text: 300mW SOT-23 ZENER DIODES BZX84 SERIES Features S OT -23 Vz R ange 2.4 to 75V Power Dis s ipation 300mW .122 3.1 .110 (2.8) .016 (0.4) Top V iew .056 (1.43 ) .052 (1.33 ) 3 1 0.031 (0.8) 2 0.035 (0.9) 0.079 (2.0) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125)


    Original     		PDF 300mW OT-23 BZX84 300mW marking Z58 z58 diode Zener 9v 201 zener diode sot23 ZX84C z58 zener diode zener diode zx 12 zener 8v diode MARKING z57 ZX84-B

    zener 14v diode

    Abstract: No abstract text available
    Text: High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use


    Original     		PDF SI-5154S zener 14v diode

    Untitled

    Abstract: No abstract text available
    Text: MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package


    Original     		PDF MSTC110 110Amp MSTC110-08 MSTC110-12 MSTC110-16 MSCT110 VGD125 IGD125

    Untitled

    Abstract: No abstract text available
    Text: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF SCH2809 ENA0446 SCH1305) SBS018) SCH2809/D

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0958A MCH6336 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 43mΩ, Single MCPH6 Features • • Ultrahigh-speed switching Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA0958A MCH6336 PW10s, 1200mm2 A0958-7/7

    102N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 102N30P 102N30P

    Untitled

    Abstract: No abstract text available
    Text: CA3310, CA3310A 33 h a r m 's CMOS, 10-Bit, A/D Converters with Internal Track and Hold August 1997 Features • Description CMOS Low Power Typ . 15mW • Single Supply Voltage. 3V to 6V


    OCR Scan     		PDF CA3310, CA3310A 10-Bit, IN914 D74HC

    CVSD

    Abstract: "3 Bit Shift Register" 55536 8145 ic audio HC-55536 HC1-55536-5 reference CVSD 55536-5 CVSD modulator HC1-55536-9
    Text: 33 HC-55536 «a « Continuous Variable Slope Delta-Demodulator CVSD March 1993 Features Description • All Digital • Requires Few External Parts • Low Power Drain: 15mW from Single 3V-6V Supply • Time Constants Determined by Clock Frequency; No


    OCR Scan     		PDF HC-55536 HC-55536 desig536 -12d8 -12dB -18dBIN -24dB -36dB 16kbps CVSD "3 Bit Shift Register" 55536 8145 ic audio HC1-55536-5 reference CVSD 55536-5 CVSD modulator HC1-55536-9

    F10P100

    Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
    Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04


    OCR Scan     		PDF 11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F