Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
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DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
60747and
20110915a
DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06BS
60747and
20110915a
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6P060AS
Abstract: marking diode 6a
Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak
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DSEP6-06AS
6P060AS
60747and
20110915a
6P060AS
marking diode 6a
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6Y150AS
Abstract: 6Y150AS IXYS
Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-015AS
6Y150AS
O-252
60747and
20131031b
6Y150AS
6Y150AS IXYS
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-0045AS
6Y045AS
O-252
60747and
20131031b
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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Untitled
Abstract: No abstract text available
Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100
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BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BC847B
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hct15dsr5
Abstract: HCT-25DSR5 AUTHOR hall 48a hall current transducer HCT-06DSR5
Text: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT SENSOR CLOSED LOOP 6A INTERNAL CODE HCT-06DSR5 DATE 02/11/10 EDITION 2 DOCUMENT NAME HCT-06DSR5_2.doc PAGE 1/16 HCT-06DSR5 SERIES HALL EFFECT CURRENT SENSOR CLOSED LOOP NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.
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HCT-06DSR5
HCT-06DSR5
hct15dsr5
HCT-25DSR5
AUTHOR
hall 48a
hall current transducer
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6A100
Abstract: No abstract text available
Text: 6A05 - 6A100 CREAT BY ART Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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6A100
MIL-STD-202,
260/10s
300us
6A100
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Untitled
Abstract: No abstract text available
Text: 6A05 - 6A100 Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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6A100
MIL-STD-202,
300us
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Untitled
Abstract: No abstract text available
Text: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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6A05G
6A100G
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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6A05G
6A100G
MIL-STD-202,
260/10s
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H9926CS
Abstract: H9926S
Text: HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment
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MOS200508
H9926S
H9926CS
V-10V)
H9926CS
200oC
183oC
217oC
260oC
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transistor 6n60
Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
Text: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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MOS200402
H06N60
O-263
spee80
183oC
217oC
260oC
H06N60U,
H06N60E,
transistor 6n60
6N60
H06N60F
06N60
H06N60E
H06N60U
marking code 749
PB40
MOS200402
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mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A
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MOS200702
H3055MJ
H3055MJ
O-252
V-10V)
10sec
mosfet y1
MOSFET MARK y2
mosfet k 61 y1
y2 marking
TL 434
mosfet sn60
ultra low idss
H-3055
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mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A
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MOS200606
H3055LJ
H3055LJ
O-252
V-10V)
200oC
183oC
217oC
260oC
245oC
mosfet y1
MOSFET MARK y2
mosfet k 61 y1
TL 434
Y2 MARKING
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CMSH3-40
Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Text: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J
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CMPS5064
BC846A
BC846B
BC847A
BC847B
CMPT5551
BC847C
BC848A
BC848B
BC848C
CMSH3-40
CMPD1001A
marking db6
BCW71 AG
marking 1FF
MARKING CODE 8Y
marking code k9
MARKING CODE 9k
6K MARKING CODE
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a-316
Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF IS t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t
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ERA82-004
a-316
code diode transient
CV marking code diode transient
A316
a316 j
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CV marking code diode transient
Abstract: ERA82-004 a316 j
Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t
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OCR Scan
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PDF
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ERA82-004
CV marking code diode transient
a316 j
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ERA82-004
Abstract: P151 T151 T810 T930 a316
Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na
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OCR Scan
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ERA82-004
l95t/R89
P151
T151
T810
T930
a316
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Untitled
Abstract: No abstract text available
Text: JRS300100 REV j ECIM I APP'D ~ 6299 U f i r T r - i f ^ HITE MARKING FONT SIZE 6 1.406 6a 3X 0 .2 0 0 DQ a Q m .625 .625 1.110 MIN 1.015 MAX 4X R.055 MAX RECOMMENDED PANEL CUT-OUT 1.74 MAX ATING SCREW PHILLIPS HEAD APTURED SPRING GASKET SUPPLIED WITH RELAY
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PDF
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JRS300100
ASTM-D5205
JRS300101
JRS300110
JRS300111
pr-08
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SL106D
Abstract: SL210ND SL110AB AC125V SLN210K SL120D SL103A AC250V6A SL120A SLN210K-9
Text: SL Miniature Rocker Switches I Num bering- SL 1 20 A T Current S e r ie s c o d e 1-; N u m b e r o f poles m m m ± Code C ircuit fu n ction , A K ON - O FF D N ON - ON J W l- p o le S L 103* 106 \ Switching \ v function Type m & m T a m if i'b M T Viewed fro m type No. marking side
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SL103*
SL103A
SL106A
SL106D
AC125V
SLN210K
AC1000V
DC500V)
150kQ
SL210ND
SL110AB
SL120D
AC250V6A
SL120A
SLN210K-9
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