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    6A MARKING CODE Search Results

    6A MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    6A MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:


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    PDF DSS6-0025BS 6Y025AS O-252 60747and 20131031b

    6P060AS

    Abstract: No abstract text available
    Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


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    PDF DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS

    DIODE MARKING CODE B3

    Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
    Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:


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    PDF DSEP6-06BS Recti10 60747and 20110915a DIODE MARKING CODE B3 DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2

    Untitled

    Abstract: No abstract text available
    Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


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    PDF DSEP6-06BS 60747and 20110915a

    6P060AS

    Abstract: marking diode 6a
    Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak


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    PDF DSEP6-06AS 6P060AS 60747and 20110915a 6P060AS marking diode 6a

    6Y150AS

    Abstract: 6Y150AS IXYS
    Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak


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    PDF DSS6-015AS 6Y150AS O-252 60747and 20131031b 6Y150AS 6Y150AS IXYS

    Untitled

    Abstract: No abstract text available
    Text: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak


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    PDF DSS6-0045AS 6Y045AS O-252 60747and 20131031b

    6P060AS

    Abstract: No abstract text available
    Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS

    Untitled

    Abstract: No abstract text available
    Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100


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    PDF BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BC847B

    hct15dsr5

    Abstract: HCT-25DSR5 AUTHOR hall 48a hall current transducer HCT-06DSR5
    Text: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT SENSOR CLOSED LOOP 6A INTERNAL CODE HCT-06DSR5 DATE 02/11/10 EDITION 2 DOCUMENT NAME HCT-06DSR5_2.doc PAGE 1/16 HCT-06DSR5 SERIES HALL EFFECT CURRENT SENSOR CLOSED LOOP NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.


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    PDF HCT-06DSR5 HCT-06DSR5 hct15dsr5 HCT-25DSR5 AUTHOR hall 48a hall current transducer

    6A100

    Abstract: No abstract text available
    Text: 6A05 - 6A100 CREAT BY ART Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF 6A100 MIL-STD-202, 260/10s 300us 6A100

    Untitled

    Abstract: No abstract text available
    Text: 6A05 - 6A100 Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF 6A100 MIL-STD-202, 300us

    Untitled

    Abstract: No abstract text available
    Text: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF 6A05G 6A100G MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode


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    PDF 6A05G 6A100G MIL-STD-202, 260/10s

    H9926CS

    Abstract: H9926S
    Text: HI-SINCERITY Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 1 2 3 4 H9926S Symbol & Pin Assignment


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    PDF MOS200508 H9926S H9926CS V-10V) H9926CS 200oC 183oC 217oC 260oC

    transistor 6n60

    Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
    Text: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


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    PDF MOS200402 H06N60 O-263 spee80 183oC 217oC 260oC H06N60U, H06N60E, transistor 6n60 6N60 H06N60F 06N60 H06N60E H06N60U marking code 749 PB40 MOS200402

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
    Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A


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    PDF MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


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    PDF MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING

    CMSH3-40

    Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
    Text: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J


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    PDF CMPS5064 BC846A BC846B BC847A BC847B CMPT5551 BC847C BC848A BC848B BC848C CMSH3-40 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE

    a-316

    Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
    Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF IS t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t


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    PDF ERA82-004 a-316 code diode transient CV marking code diode transient A316 a316 j

    CV marking code diode transient

    Abstract: ERA82-004 a316 j
    Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t


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    PDF ERA82-004 CV marking code diode transient a316 j

    ERA82-004

    Abstract: P151 T151 T810 T930 a316
    Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na


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    PDF ERA82-004 l95t/R89 P151 T151 T810 T930 a316

    Untitled

    Abstract: No abstract text available
    Text: JRS300100 REV j ECIM I APP'D ~ 6299 U f i r T r - i f ^ HITE MARKING FONT SIZE 6 1.406 6a 3X 0 .2 0 0 DQ a Q m .625 .625 1.110 MIN 1.015 MAX 4X R.055 MAX RECOMMENDED PANEL CUT-OUT 1.74 MAX ATING SCREW PHILLIPS HEAD APTURED SPRING GASKET SUPPLIED WITH RELAY


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    PDF JRS300100 ASTM-D5205 JRS300101 JRS300110 JRS300111 pr-08

    SL106D

    Abstract: SL210ND SL110AB AC125V SLN210K SL120D SL103A AC250V6A SL120A SLN210K-9
    Text: SL Miniature Rocker Switches I Num bering- SL 1 20 A T Current S e r ie s c o d e 1-; N u m b e r o f poles m m m ± Code C ircuit fu n ction , A K ON - O FF D N ON - ON J W l- p o le S L 103* 106 \ Switching \ v function Type m & m T a m if i'b M T Viewed fro m type No. marking side


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    PDF SL103* SL103A SL106A SL106D AC125V SLN210K AC1000V DC500V) 150kQ SL210ND SL110AB SL120D AC250V6A SL120A SLN210K-9