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    6A 650V MOSFET Search Results

    6A 650V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    iW3827-01 Renesas Electronics Corporation High Power Factor, Constant-Voltage Controller with Integrated 650V Power MOSFET Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    6A 650V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 6N65K-MT 6N65K-MT QW-R502-A95

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    IX6R11S3

    Abstract: IX6R11P7
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    U4008

    Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 U4008 IX6R11P7 IXFK21N100F 18PIN 18-PIN

    IX6R11S6

    Abstract: ix6r11s3
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 Edisonstrasse15

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sXFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sig500 IX6R11S3 IX6R11S6 Edisonstrasse15 D-68623;

    6A 650V MOSFET

    Abstract: mosfet 650v
    Text: TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 650 1.2 @ VGS =10V ID (A) 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 O-220 ITO-220 TSM7N65 6A 650V MOSFET mosfet 650v

    A09 MOSFET

    Abstract: TSM7N65 ITO-220 6A 650V MOSFET 32nC
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 32nerty A09 MOSFET ITO-220 6A 650V MOSFET 32nC

    TO 220 Package High current N CHANNEL MOSFET

    Abstract: TSM7N65 MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 TO 220 Package High current N CHANNEL MOSFET MOSFET 50V 100A TO-220 ENHANCEMENT MOSFET pin diagram of MOSFET "MARKING DIAGRAM" 25V 1A power MOSFET TO-220 circuit diagram of mosfet based power supply N-CHANNEL ENHANCEMENT MODE POWER MOSFET n-channel mosfet transistor

    6A 650V MOSFET

    Abstract: MOSFET 50V 100A TO-220 TSM7N65
    Text: TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N65 ITO-220 O-220 TSM7N65 6A 650V MOSFET MOSFET 50V 100A TO-220

    TSM7N65A

    Abstract: No abstract text available
    Text: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)


    Original     		PDF TSM7N65A ITO-220 50pcs TSM7N65ACI TSM7N65A

    24v 2a smps

    Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
    Text: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,


    Original     		PDF 95Vac 264Vac 1500-AEQ 144Vdc/10A. 138Vdc 60-cell, 24v 2a smps smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R

    SSE12N65SL

    Abstract: MosFET
    Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSE12N65SL O-220P SSE12N65SL 07-Nov-2013 MosFET

    SSRF12N65SL

    Abstract: MosFET 6A 650V MOSFET
    Text: SSRF12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSRF12N65SL ITO-220 SSRF12N65SL 07-Nov-2013 MosFET 6A 650V MOSFET

    Mosfet

    Abstract: SSF11NS65U
    Text: SSF11NS65U 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.32Ω (typ.) ID 11A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		PDF SSF11NS65U O-220 SSF11NS65U Mosfet

    Untitled

    Abstract: No abstract text available
    Text: SSD12P10 2A , 650V , RDS ON 8Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance


    Original     		PDF SSD12P10 O-252 SSD12P10 12P10 O-252 300us, 06-Jun-2012

    NL2024

    Abstract: lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B
    Text: P O W E R F O R P O R TA B L E E L E C T R O N I C S Rechargeable Batteries Keeping Up with Current Demand By Jeff Shepard W IRELESS MOBILITY is one of the major forces driving demand for, and demands on, rechargeable batteries. The latest devices in the mobile world


    Original     		PDF 710Wh/kg 300Wh/l, NL2024 lithium 10.8v LG chem FS6S1565RB saphion n charge KA5Q0765R P1625 FS7M0880 GP Batteries KA1M0880B

    7N60

    Abstract: e-bike CYStech Electronics
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN7N60FP Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN7N60FP C409FP MTN7N60FP O-220FP UL94V-0 7N60 e-bike CYStech Electronics

    Untitled

    Abstract: No abstract text available
    Text: MB12N65B0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB12N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter


    Original     		PDF MB12N65B0000000 MB12N65B D020210 O-263 800pcs

    D0310

    Abstract: No abstract text available
    Text: MB06N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter


    Original     		PDF MB06N65F0000000 MB06N65F O220F D020210 O-220F 50pcs 1000pcs D0310

    Untitled

    Abstract: No abstract text available
    Text: MB12N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB12N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter


    Original     		PDF MB12N65F0000000 MB12N65F O220F D020210 O-220F 50pcs 1000pcs