29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/21/1999
JUN/14/2001
29F100T
1 MEGA OHM RESISTOR
MX29F100T
29f100
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CY7C1298A
Abstract: GVT7164C18
Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry
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CY7C1298A/
GVT7164C18
CY7C1298A/GVT7164C18
65536x18
CY7C1315A
CY7C1298A
CY7C1298A
GVT7164C18
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MX29F100T
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
FEB/04/1999
PM0548
MX29F100T
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29F100T
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0548
29F100T
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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PDF
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
CompatiPM0548
DEC/21/1999
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80ms--
80us--
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
single-pow003
PM0548
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CY7C1298A
Abstract: GVT7164C18
Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry
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CY7C1298A/
GVT7164C18
CY7C1298A/GVT7164C18
65536x18
CY7C1315A
CY7C1298A
CY7C1298A
GVT7164C18
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80us--
100us
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CY7C1298A
Abstract: GVT7164C18
Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry
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CY7C1298A/
GVT7164C18
CY7C1298A/GVT7164C18
65536x18
CY7C1315A
CY7C1298A
CY7C1298A
GVT7164C18
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VS1003
Abstract: No abstract text available
Text: VS1003 VS1003 - MP3/WMA AUDIO CODEC Features Description • Decodes MPEG 1 & 2 audio layer III CBR +VBR +ABR ; WMA 4.0/4.1/7/8/9 all profiles (5-384kbit/s); WAV (PCM + IMA ADPCM); General MIDI / SP-MIDI files • Encodes IMA ADPCM from microphone or line input
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VS1003
VS1003
5-384kbit/s)
FI-33720
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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16-BIT
M16C/29
REJ09B0101-0112
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Untitled
Abstract: No abstract text available
Text: STR71xFxx STR710RZ ARM7TDMI 32-bit MCU with Flash, USB, CAN, 5 timers, ADC, 10 communication interfaces Features • ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory
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STR71xFxx
STR710RZ
32-bit
LQFP64
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24512A
Abstract: No abstract text available
Text: W24512A W in b o n d - - ; ^ ^ y 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x 8 bits that operates on a single 5-volt power supply. This device Is manufactured using Winbond’s high performance CMOS
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W24512A
W24512A
65536x
500mW
32-pin
400mil
300mil
A0-A15
24512A
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16PIN
Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY
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65536x1)
16PIN
51CB4H-10
51C64H-12
51C64H-8
51CB4HL-1D
HY5164-15
V51C64-10
V51C64-12
V51C64-15
51C64HL-12
51C64L-12
51C65L-10
51C65L-12
HY51C64-10
HY51C64-12
HY51C64-15
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si)
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ma9287
65536x1
MA9287
65536x1
MA9287_
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65536X8
Abstract: No abstract text available
Text: jm i « im W23512 Winbond /iTTTTX 64K X 8 MASK ROM DESCRIPTION FEATURES The W23512 i s a • Power Consumption : High Speed Mask-Programm A c tiv e : 150mW T y p . a b le Read-Only Memory O rganized as 65536X Standby : 25mW(Typ.) 8 B it s and •A c c e s s Time : 200/250 ns (Max.)
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150mW
W23512
65536X
B-1930
65536X8
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61256P
Abstract: 61256F HN61256 HN61256P H*61256
Text: HN61256P, HN612S6FP 327 6 8 x 8-bit or 655 3 6 x 4-bit CMOS Mask Programmable Read Only Memory The Hitachi HN61256P/FP is a mask programmable 32768 x 8 -b it or 65536x4-bit CMOS read only memory. It operates from a single power supply and is compatible w ith T T L . Low power consumption
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HN61256P,
HN612S6FP
HN61256P/FP
65536x4-bit
IS2074®
61256P
61256F
HN61256
HN61256P
H*61256
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)
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ma9187
65536x1
S10309PDS
MA9187
65536x1
Cobalt-60
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x7ta
Abstract: No abstract text available
Text: fTÍTrK Winbond 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x8 bits that operates on a single 5-volt pow er supply. This device is manufactured using W inbond’s high performance CMOS
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W24512A
65536x8
500mW
32-pin
400mil
300mil
W24512A
W24512AK-15
W24512AK-20
W24512AJ-15
x7ta
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AX 1668 F 24 pin
Abstract: No abstract text available
Text: SMJ27C512 65536 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS019D - SEPTEMBER 1987 - REVISED OCTOBER 1997 Organization . . . 65536 by 8 Bits J PACKAG E High-Reiiabiiity MIL-PRF-38535 Processing T O P V IE W Single 5-V Power Supply A15[ Pin-Compatible With Existing 512K
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SMJ27C512
SGMS019D
MIL-PRF-38535
27C512-15
27C512-20
27C512-25
27C512-30
AX 1668 F 24 pin
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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