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    64KX8 RAM Search Results

    64KX8 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C513JIZ-12 Rochester Electronics X28C513 - EEPROM, 64KX8, 5V, Parallel Visit Rochester Electronics Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    AM27C512-70JI Rochester Electronics LLC OTP ROM, 64KX8, 70ns, CMOS, PQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    64KX8 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    64Kx8 CMOS RAM

    Abstract: K6L0908C2A K6L0908C2A-B K6L0908C2A-F K6L0908C2A-L K6L0908C2A-P
    Text: K6L0908C2A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft Novemer 28, 1993 Design target 0.1 Revision May 13, 1994 Preliminary 1.0 Finalize December 1, 1994 Final 2.0 Revision


    Original     		PDF K6L0908C2A 64Kx8 100ns 32-THIN 0820F) 64Kx8 CMOS RAM K6L0908C2A-B K6L0908C2A-F K6L0908C2A-L K6L0908C2A-P

    TSOP 87

    Abstract: No abstract text available
    Text: K6L0908V2A, K6L0908U2A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.


    Original     		PDF K6L0908V2A, K6L0908U2A 64Kx8 KM68V512AFamily. 32-sTSOP TSOP 87

    Untitled

    Abstract: No abstract text available
    Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are


    Original     		PDF TK89C668 DS015 8051microcontroller 64Kx8 P89C668

    64Kx8 CMOS RAM

    Abstract: KM68512BLT-5L KM68512B KM68512BLI-L KM68512BL-L KM68512BLT-7L KM68512BLTI-7L
    Text: Advance CMOS SRAM KM68512B Family Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF KM68512B 64Kx8 32-THIN 0820F) 64Kx8 CMOS RAM KM68512BLT-5L KM68512BLI-L KM68512BL-L KM68512BLT-7L KM68512BLTI-7L

    KM68V512ALTE-10L

    Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
    Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.


    Original     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-sTSOP KM68V512ALTE-10L 64Kx8 CMOS RAM KM68U512ALE-L

    package tsop1

    Abstract: 64Kx8 CMOS RAM K6T0908U2B K6T0908V2B
    Text: K6T0908V2B, K6T0908U2B Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 1.0 History Draft Data Remark Design target November 25, 1997 Advance Finalize August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T0908V2B, K6T0908U2B 64Kx8 package tsop1 64Kx8 CMOS RAM K6T0908V2B

    Untitled

    Abstract: No abstract text available
    Text: _EDI8M864C m o i Electronic D«*lgn> Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory


    OCR Scan     		PDF EDI8M864C 64Kx8 EDI8M864C 32Kx8 150ns

    static ram 64kx8

    Abstract: EDI8M864C
    Text: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.


    OCR Scan     		PDF EDI8M864C 64Kx8 EDI8M864C 32Kx8 150ns static ram 64kx8

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible


    OCR Scan     		PDF KM68512A 64Kx8 64Kx8 32-SOP, 32-TSOP 7Tb4142 525mil) 32-THlN

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    Untitled

    Abstract: No abstract text available
    Text: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption


    OCR Scan     		PDF 64KX8 AS7C512 AS7C512L 64KX8 0DDD473

    004II

    Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
    Text: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand 004II a1215 KM68U512ALE-L KM68U512ALTGE-8L

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand

    Untitled

    Abstract: No abstract text available
    Text: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.


    OCR Scan     		PDF KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft Novem er 28th 1993 Design target 0.1 Revision May 13th 1994 Preliminary 1.0 Finalize December 1st 1994 Final


    OCR Scan     		PDF KM68512A 64Kx8 100ns 525mil) 32-THIN 0820F)

    A2ND

    Abstract: KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A fam ily: 3.3V +/- 0.3V KM68U512A fam ily: 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68VS12A 0G23b7fl A2ND KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply


    OCR Scan     		PDF KM68512L/L-L 64Kx8 550jiW 110nW 385mW KM68512LG/LG-L 32-pin 525mil) KM68512LT/LT-L

    KM6651

    Abstract: cs250 KM68512ALI SRAM 64KX8 5V
    Text: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.


    OCR Scan     		PDF KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit KM6651 cs250 SRAM 64KX8 5V

    Untitled

    Abstract: No abstract text available
    Text: KM68512B Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAM SUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM68512B 64Kx8 32-THIN 0820F)

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM68512AL / AL-L 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|xW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM68512AL 64Kx8 385mW KM68512ALG/ALG-L 32-pin 525mil) KM68512ALT/ALT-L 8512A 288-bit

    SRAM 64Kx8

    Abstract: 64Kx8 CMOS RAM KM68512AL
    Text: KM68512AL / AL-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|iW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM68512AL 64Kx8 385mW KM68512ALG/ALG-L 32-pin 525mil) KM68512ALT/ALT-L KM68512AL/AL-L 288-bit SRAM 64Kx8 64Kx8 CMOS RAM

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP DG23b27

    8512A

    Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP 23b27 8512A A12C A15C KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND