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    64K X 8 SRAM Search Results

    64K X 8 SRAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    71T016S12PH18 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA10PH8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12BFG8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12PH8/2984 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA12YI8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation
    71T016SA15PHGI8 Renesas Electronics Corporation 2.5V 64K X 16 SRAM Visit Renesas Electronics Corporation

    64K X 8 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


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    PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    Untitled

    Abstract: No abstract text available
    Text: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small


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    PDF CY14V101LA CY14V101NA 8/64K CY14V101LA/CY14V101NA

    ftr 02

    Abstract: F.TR.02 19 IDT BH package marking marking a7r
    Text: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V


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    PDF AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K AL5DS9269V/79V/89V 16K/32K/64K AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K AL5DS9069V/79V/89V/99V 16K/32K/64K/128K 2002-Copyright ftr 02 F.TR.02 19 IDT BH package marking marking a7r

    cmos SRAM 35ns 8k X 8 dip

    Abstract: 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164
    Text: Qualification Report January 1992 QTP 91094 64K SRAM FAMILY MARKETIN G DEVICE PART NBR DESCRIPTION CY7C161 16K x 4 SIO CY7C162 16K x 4 (SIO) CY7C164 16K x 4 CY7C166 (OE) CY7C185 8K x 8 CY7C186 8K x 8 (.6 DIP) CY7C187 64K x 1 Version 1.2 PRODUCT DESCRIPTION (for qualification)


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    PDF CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 Cypr507/1 200mA cmos SRAM 35ns 8k X 8 dip 7C166 CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C186 CY7C187 7C164

    Untitled

    Abstract: No abstract text available
    Text: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V


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    PDF AL5DS9389V --64K AL5DS9289V AL5DS9199V --128K AL5DS9099V AL5DS9389V/9289V/9199V/9099V 2002-Copyright

    "Dual-Port RAM" for video applications

    Abstract: "32K x 16" dual port SRAM sram with address counter 3.3v counter
    Text: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features True dual ported memory cells 17 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)


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    PDF 4K/8K/16K/32K/64K/128K 8/9/16/18-bit 4K/8K/16K/32K/64K 18-bit AL5DS9349V/59V/69V/79V/89V) 16K/32K/64K 16-bit AL5DS9269V/79V/89V) 8K/16K/32K/64K/128K AL5DS9159V/69V/79V/89V/99V) "Dual-Port RAM" for video applications "32K x 16" dual port SRAM sram with address counter 3.3v counter

    low power sram 64k

    Abstract: 9l reset 1517R
    Text: AL5DS9xx9V 3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit Features ! True dual ported memory cells ! 18 Flow-Through/Pipelined devices: - 4K/8K/16K/32K/64K x 18-bit organization AL5DS9349V/59V/69V/79V/89V - 16K/32K/64K x 16-bit organization (AL5DS9269V/79V/89V)


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    PDF 4K/8K/16K/32K/64K/128K 8/9/16/18-bit 4K/8K/16K/32K/64K 18-bit AL5DS9349V/59V/69V/79V/89V) 16K/32K/64K 16-bit AL5DS9269V/79V/89V) AL5DS9149V/59V/69V/79V/89V/99V) low power sram 64k 9l reset 1517R

    Untitled

    Abstract: No abstract text available
    Text: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V


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    PDF AL5DS9389V --64K AL5DS9289V AL5DS9199V --128K AL5DS9099V AL5DS9389V/9289V/9199V/9099V

    Untitled

    Abstract: No abstract text available
    Text: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V


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    PDF AL5DS9389V --64K AL5DS9289V AL5DS9199V --128K AL5DS9099V AL5DS9389V/9289V/9199V/9099V 2002-Copyright

    SEM 2004

    Abstract: CY7C008 CY7C009 CY7C018 CY7C019
    Text: CY7C008/009 CY7C018/01964K/128K x 8/9 Dual-Port Static RAM CY7C008/009 CY7C018/019 64K/128K x 8/9 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 64K x 8 organization CY7C008


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    PDF CY7C008/009 CY7C018/01964K/128K CY7C018/019 64K/128K CY7C008) CY7C009) CY7C018) CY7C019) 35-micron SEM 2004 CY7C008 CY7C009 CY7C018 CY7C019

    29IO1

    Abstract: A62S6308 bga 6x8 Package bga 6x8
    Text: A62S6308 Series 64K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 1.0 Initial issue September 01, 1997 Preliminary 1.1 Modify TSOP TSSOP pin configuration. January 16, 1998


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    PDF A62S6308 32-pin 36-ball 29IO1 bga 6x8 Package bga 6x8

    Untitled

    Abstract: No abstract text available
    Text: STATIC SRAM RAM Random Access Memory TSOP LH5164AT-80L CMOS 64K 8K x 8


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    PDF LH5164AT-80L

    A62S6308

    Abstract: bga 6x8
    Text: A62S6308 Series 64K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 1.0 Initial issue September 01, 1997 Preliminary 1.1 Modify TSOP TSSOP pin configuration. January 16, 1998


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    PDF A62S6308 32-pin 36-ball bga 6x8

    A62S6308AM

    Abstract: A62S6308AV-70SF A62S6308AM-55SUF A62S6308AM-55SF
    Text: A62S6308A Series Preliminary 64K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 64K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue May 31, 2011 Preliminary May, 2011, Version 0.0 AMIC Technology, Corp.


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    PDF A62S6308A 076MM A62S6308AM A62S6308AV-70SF A62S6308AM-55SUF A62S6308AM-55SF

    CY7C194

    Abstract: CY7C195 CY7C199 EME-6300H
    Text: Qualification Report December 1996 - QTP# 95149 Version 1.1 256K SRAM, R28 TECHNOLOGY, FAB 4 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification


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    PDF CY7C194 CY7C195 CY7C199 15psig) CY7C199-VC 28-pin, 300-mil 200mA CY7C194 CY7C195 CY7C199 EME-6300H

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA, CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


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    PDF CY14B101LA, CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    DRAM 256 X 1, 18 PDIP

    Abstract: 64K X 4 SRAM mmui
    Text: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8


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    PDF AS7C164 AS7C256 AS7C259 AS7C512 AS7C1024 AS7C1028 AS7C3256 AS7C3512 AS7C31024 AS7C33232 DRAM 256 X 1, 18 PDIP 64K X 4 SRAM mmui

    saa 1291

    Abstract: CY7C008 CY7C009 CY7C018 CY7C019 IDT7008
    Text: iJë- CY7C008/009 CY7C018/019 : CYPRESS PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009) 64K x 9 organization (CY7C018)


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    PDF CY7C008/009 CY7C018/019 CY7C008) CY7C009) CY7C018) CY7C019) 35-micron 64K/128K saa 1291 CY7C008 CY7C009 CY7C018 CY7C019 IDT7008

    Untitled

    Abstract: No abstract text available
    Text: DPE4648 □PM Dense-Pac Microsystems. Inc. 64K X 8 CMOS EEPROM MODULE DESCRIPTION: The DPE4648 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module organized 64K X 8. The DPE4648 is upward pin compatable with the JEDEC standard 128K X 8 SRAM module and


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    PDF DPE4648 DPE4648 64-Bytes 500mV

    cwe 610

    Abstract: PE4648
    Text: □PM Dense-Pac Microsystems. Inc. 64K X 8 C O DPE4648 S EEPROM MODULE DESCRIPTION: The DPE4648 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM) module organized 64K X 8. The DPE4648 is upward pin compatable with the JEDEC standard 128K X 8 SRAM module and


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    PDF DPE4648 DPE4648 64-Bytes 500mV cwe 610 PE4648

    Untitled

    Abstract: No abstract text available
    Text: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors


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    PDF DPS1025 DPS1025 Complete601 S1025 125-C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5214 CYPRESS CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009)


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    PDF CY7C008V/009V CY7C018V/019V 64K/128K CY7C008) CY7C009) CY7C018) CY7C019) 35-micron

    Untitled

    Abstract: No abstract text available
    Text: _ CY7C008/009 CY7C018/019 s ->«a " p Y p - 64K/128K x 8/9 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • 64K x 8 organization CY7C008 • 128K x 8 organization (CY7C009)


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    PDF CY7C008/009 CY7C018/019 64K/128K CY7C008) CY7C009) CY7C018) CY7C019) 35-micron

    Untitled

    Abstract: No abstract text available
    Text: DPS1025 Dense-Pac Microsystems. Inc. ^ 64K X 16 C M O S S R A M M O D U L E NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1025 is a 64K X 8 high-speed, low-power static R A M module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors


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    PDF DPS1025 DPS1025 30A00 S1025 3QA00MH