9715
Abstract: JESD22
Text: Cypress Semiconductor Qualification Report QTP# 97153, VERSION 1.1 September, 1997 64K x 18 Synchronous Cache RAM CY7C1031/CY7C1032 Cypress Semiconductor 64K x 18 SRAM, R3 Technology, Fab 4 Devices:CY7C1031/CY7C1032 Package: PLCC QTP# 97153 V1.1 Page 2 of 8
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CY7C1031/CY7C1032
CY7C1031/1032
52-pins
f4621458
CY7C1031-JC
30C/60
9715
JESD22
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ibm04181aulaa
Abstract: ibm sram
Text: Workstation cache applications up to 250MHz 1Mb High Performance SRAM Highlights Access Time 2.25 ns Pipeline , 5.7ns (Flow Thru), 6.0 ns (Register Latch) Cycle Time 4 ns (Pipeline ),4 ns (Flow Thru), 6 ns (Register Latch) Organizations 64K x 18, 32K x 36
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250MHz
250Mhz)
MO-163.
SA14-xxxx-00
07SA14xxxxrr*
ibm04181aulaa
ibm sram
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CEL9200
Abstract: 8361H A100R CY7C1329 JESD22
Text: Cypress Semiconductor Technology Qualification Report QTP# 99311 VERSION 2.0 December, 2000 R52D-3Technology, Fab 4 Qualification CY7C1329 64K x 32 Synchronous-Pipelined Cache RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director
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R52D-3Technology,
CY7C1329
R52D-3
CY7C1329-2Meg
Pipeline00
CY7C1329-AC
30C/60
CEL9200
8361H
A100R
CY7C1329
JESD22
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84-1LMISR4
Abstract: No abstract text available
Text: Cypress Semiconductor Metal 1 Qualification Report QTP# 99481 VERSION 1.0 February, 2000 1 Meg SRAM, R42HD Technology, Fab 4 Qualification CY7C1031/CY7C1032 64K x 18 Synchronous Cache RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager
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R42HD
CY7C1031/CY7C1032
R42DH
CY7C1032
CY7C1032/31.
52-pin
CY7C109-VC
84-1LMISR4
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Untitled
Abstract: No abstract text available
Text: GS820E32AT-180/166/133/4/5 64K x 32 2Mb Synchronous Burst SRAM Functional Description tin Applications The GS820E32A is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache
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GS820E32AT-180/166/133/4/5
100-lead
GS820321
2000E
3/2000E;
GS82032A
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tag13
Abstract: TAG10_ TAG9 CY2305 CYM76S683 CYM76S684 TAG12 64k X 8 30-pin SIMM
Text: fax id: 2044 1CY M74 P43 4B/4 35B CYM76S683/684 PRELIMINARY 512K/1M L2 Cache Module for Power PC Systems signed for the Tsunami Catalyst type of Power PC machines. The modules are based on the Cypress high performance 64K x 18 flow through Synchronous Burst SRAMs.
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CYM76S683/684
512K/1M
160-position
tag13
TAG10_
TAG9
CY2305
CYM76S683
CYM76S684
TAG12
64k X 8 30-pin SIMM
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TAG12
Abstract: CY2305
Text: 4P434B/435B PRELIMINARY CYM76S683/684 512K/1M L2 Cache Module for Power PC Systems Features signed for the Tsunami Catalyst type of Power PC machines. The modules are based on the Cypress high performance 64K x 18 flow through Synchronous Burst SRAMs. • High-performance cache modules based on synchronous 64K x 18 data BSRAM
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4P434B/435B
CYM76S683/684
512K/1M
160-position
160-Pin
TAG12
CY2305
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GS82032A
Abstract: GS84018A MPC7410 MPC7450 MPC750 MPC755 RM5271 RM7065 intel L2 cache burst length 832KX8
Text: High Speed Memory Technology for Cache Applications Introduction Many processors today use a high speed cache to accelerate memory access. A level 2 or level 3 cache connected on a backside bus can take advantage of high SRAM bandwidth in providing low latency data access. Today’s performance-oriented applications require
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GS8170DXX
GS8170DDxx.
to18Mb,
GS82032A
GS84018A
MPC7410
MPC7450
MPC750
MPC755
RM5271
RM7065
intel L2 cache burst length
832KX8
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64K X 4 CACHE SRAM
Abstract: 1Mb static ram 6256 RAM dh14 71V432 IDT7MPV6255 IDT7MPV6256 a5 gnd 7MPV6255
Text: 256KB, 512KB, AND 1MB SECONDARY CACHE MODULES FOR THE PowerPC Integrated Device Technology, Inc. PRELIMINARY IDT7MPV6255 IDT7MPV6256 IDT7MPV6266 FEATURES DESCRIPTION • For CHRP based PowerPC systems. • 256KB, 512KB , and 1MB Pipelined Burst SRAM options
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256KB,
512KB,
IDT7MPV6255
IDT7MPV6256
IDT7MPV6266
512KB
ELF178KSC-3Z50
83MHz
7MPV6266
64K X 4 CACHE SRAM
1Mb static ram
6256 RAM
dh14
71V432
IDT7MPV6255
IDT7MPV6256
a5 gnd
7MPV6255
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UG3D6464D7B8
Abstract: No abstract text available
Text: UG3D6464D7B8 512K Bytes 64K x 64 160 Pin SRAM DIMM based on 64K x 32 Features General Description The UG3D6464D7B8 is a 524,038 bits by 64 Sync Burst SRAM module. The UG3D6464D7B8 is assembled using 2 pcs of 64K x 32 Sync Burst SRAMs in 100-pin QFP packages and
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UG3D6464D7B8
UG3D6464D7B8
100-pin
32Kx8
66MHz
1130mil)
64Kx32
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510300
Abstract: AAY3 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303 DL155 610300 DSP56000 APR
Text: Freescale Semiconductor Order by APR 25/D Rev. 0 , 4/16/99 by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory Fast SRAM to Motorola’s DSP56300 family of devices. This document is a supplement to the DSP56300 24-Bit Digital
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DSP56300
24-Bit
510300
AAY3
DSP56000
DSP56301
DSP56302
DSP56303
DL155
610300
DSP56000 APR
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510300
Abstract: motorola 510300 DSP56303PV80 DATA MANUALS HP2 800 243 DSP56000 DSP56300 DSP56301 DSP56302 DSP56303
Text: MOTOROLA Order by APR 25/D Motorola Order Number Rev. 0 , 4/16/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface external Asynchronous Fast Static Random Access Memory (Fast SRAM) to Motorola’s DSP56300 family of devices. This
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DSP56300
24-Bit
Office141
510300
motorola 510300
DSP56303PV80
DATA MANUALS
HP2 800 243
DSP56000
DSP56301
DSP56302
DSP56303
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ALI chipset Ali 3516
Abstract: SEM 2006 6216 static ram sem 2005 ALI chipset Ali 3510 vl82c483 ali 3516 CMOS 5408 PAL Decoder 16L8 1K x 8 static ram
Text: June 1996 Cypres Semiconductor Corporation NUMERIC DEVICE INDEX Document Number Device Number 5000 5000 3518 3518 3519 CY101E383 CY10E383 CY2071 CY2081 CY2250 3522 3509 CY2252 CY2254A 3510 CY2255 3517 CY2257 3520 CY2260 3511 3023 3024 3011 3013 3019 3006 3023
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CY101E383
CY10E383
CY2071
CY2081
CY2250
CY2252
CY2254A
CY2255
CY2257
CY2260
ALI chipset Ali 3516
SEM 2006
6216 static ram
sem 2005
ALI chipset Ali 3510
vl82c483
ali 3516
CMOS 5408
PAL Decoder 16L8
1K x 8 static ram
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SRAM 6116
Abstract: MP61 Intel-PENTIUM-PROCESSOR 82430NX NEPTUNE 7MPV6189 3058 7MPV6189
Text: 256KB AND 512KB SECONDARY CACHE MODULES FOR THE INTEL PENTIUM PROCESSOR Integrated Device Technology, Inc. PRELIMINARY IDT7MPV6179 IDT7MPV6189 IDT7MP6181 IDT7MP6182 IDT7MPV6179/89 and IDT7MP6181/82 use asynchronous and burst CacheRAMs respectively in plastic surface mount
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256KB
512KB
IDT7MPV6179
IDT7MPV6189
IDT7MP6181
IDT7MP6182
IDT7MPV6179/89
IDT7MP6181/82
IDT7MPV6189
IDT7MP6179
SRAM 6116
MP61
Intel-PENTIUM-PROCESSOR
82430NX
NEPTUNE 7MPV6189
3058
7MPV6189
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Abstract: block diagram of processor pentium 1 IDT7MPV6189 82430NX 64K X 4 CACHE SRAM 3058 7MPV6189
Text: 256KB AND 512KB SECONDARY CACHE MODULES FOR THE INTEL PENTIUM PROCESSOR Integrated Device Technology, Inc. PRELIMINARY IDT7MPV6179 IDT7MPV6189 IDT7MP6181 IDT7MP6182 IDT7MPV6179/89 and IDT7MP6181/82 use asynchronous and burst CacheRAMs respectively in plastic surface mount
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256KB
512KB
IDT7MPV6179
IDT7MPV6189
IDT7MP6181
IDT7MP6182
IDT7MPV6179/89
IDT7MP6181/82
IDT7MPV6189
IDT7MP6179
Intel-PENTIUM-PROCESSOR
block diagram of processor pentium 1
82430NX
64K X 4 CACHE SRAM
3058
7MPV6189
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U l|r-c a rn |\J I — M T 2 L S Y T 3 2 7 2 T 4 /T 6 . M T 4 L S Y 6 4 7 2 T 4 /T 6 32K. 64K x 72 S Y N C H R O N O U S S R A M M O D U L E SYNCHRONOUS SRAM MODULE 3 2 K, 64K x 72 SRAM 256KB/512KB, 3.3V, PIPELIN ED S Y N C H R O N O U S BURST, S E C O N D A R Y CACHE
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160-lead,
MT2LSYT3272T4/T6.
MT4LSY6472T4fT6
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Untitled
Abstract: No abstract text available
Text: IS 6 1 S P 6 4 3 6 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION FEBRUARY 1997 FEATURES DESCRIPTION • Fast access time: The IS61SP6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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ns-100
ns-83
ns-75
ns-66
100-Pin
con81995SP6436
SR81995SP6436
IS61SP6436
IS61SP6436-5TQ
IS61SP6436-5PQ
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T3264
Abstract: No abstract text available
Text: ADVANCE MICRON I TECHN OLO GY, INC. MT3LST3 26 4 P , MT 3 L ST 6 4 6 4 ( P ) 32K/ 64K X 64 S Y N C H R O N O U S SRAM M O D U L E S S YN C H R O N O U S SRAM MODULE 3 2 K / 6 4 K x 64 S R A M with Tag RAM 256KB/512KB, 3.3V, FLOW -THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE
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256KB/512KB,
160-lead
160-lead,
82430FX,
82430HX
82430VX
160-PIN
T3264
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smart modular
Abstract: SM332Q4 SM332Q4A0
Text: • Telecom & Industrial SRAM Modules • SMART Modular Technologies Custom designs available QUICK REFERENCE GUIDE: 12 CACHE SRAM MODULES CACHE SIZE CACHE TYPE SPEED PART NUMBER DIMENSIONS L x H x TOr. AVAILABILITY INTEL COASt COMPLIANT, L2 CACHE MODULES, 1 6 0 PIN, 6 4 BIT DATA BUS
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512KB
256KB
256KB
SM364SCSP83XI15
SM364SCSPB3XI15
SM364TCSP83XI15
SM364T8A083XI15
SM21664
OSGUCACHEIO96
smart modular
SM332Q4
SM332Q4A0
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pbsram
Abstract: No abstract text available
Text: ♦ MC8Q364K64 LOW POWER 3 .3 V /2 .5 V 64K X 64 PBSRAM M oSys 6 !Vi i N A I ? 'V ! h i Ì ' C >!3 M / V i t! 'f • High performance, low power pipeline burst SRAM • Ultra low power single chip 512Kbyte Cache for green PC and battery powered PC • High performance
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MC8Q364K64
512Kbyte
83-133MHz
128-Pin
pbsram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ lld R O N 64K 64K x 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6, 7 and 8ns Fast OE: 5 and 6ns
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MT58LC64K18C4/A6
MT58LC64K18C4LG-8
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Untitled
Abstract: No abstract text available
Text: CMOS CACHE CONTROLLER WITH TAG FOR INTEL* PENTIUM PROCESSORS ADVANCE INFORMATION IDT71V280 Integrated Device Technology, Inc. FEATURES DESCRIPTION • Provides the Cache Tag, Status Bits, CPU interface control and Data SRAM control for Pentium CPU-based
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IDT71V280
50MHz
66MHz
10-bit
512MB
256KB,
512KB,
IDT71V280
IDT71V280will
IDT71V280.
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samsung 64k nmos static ram
Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 COMPONENT KM XX X C DEVICE TYPE •4 •42 •6 •23 •28 •93 •75 •65 DRAM VIDEO MEMORY SRAM MASK ROM STANDARD EEPROM Serial EEPROM FIFO PSEUDO ORGANIZATION • 1 : X1 •4 : X4 •8 : X8 •9 : X9
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100ns
120ns
200ns
100ns
120ns
150ns
200ns
75CXXA
samsung 64k nmos static ram
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Untitled
Abstract: No abstract text available
Text: Par ad ig m ' OEM and Subsystems Overview Paradigm Technology brings together our expertise as a leading supplier of SRAM products with the space savings and flexibility of module packaging. This allows us to offer a complete family of standard and custom memory modules.
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