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    K4S640832E Search Results

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    K4S640832E Price and Stock

    Samsung Semiconductor K4S640832E-TC75

    IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K4S640832E-TC75 495
    • 1 $14.4
    • 10 $14.4
    • 100 $5.76
    • 1000 $5.28
    • 10000 $5.28
    		Buy Now
    K4S640832E-TC75 480
    • 1 $13.5
    • 10 $13.5
    • 100 $13.5
    • 1000 $9
    • 10000 $9
    		Buy Now

    K4S640832E Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S640832E Samsung Electronics 2M x 8-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S640832E-TC1H Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TC1L Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TC75 Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz Original PDF
    K4S640832E-TL1H Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TL1L Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 100MHz Original PDF
    K4S640832E-TL75 Samsung Electronics 64Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHz Original PDF

    K4S640832E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S640832E 64Mbit K4S640832E A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S640832E 64Mbit K4S640832E A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output


    Original     		GEX-FM903XM/UC K4S640832E-TL1H A0-A11 A10/AP PDF

    M374S1623ET0

    Abstract: M374S1623ET0-C1L
    Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S1623ET0 PC100 M374S1623ET0 16Mx72 400mil 168-pin M374S1623ET0-C1L PDF

    Untitled

    Abstract: No abstract text available
    Text: M366S1623ETS PC133/PC100 Unbuffered DIMM M366S1623ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S1623ETS PC133/PC100 M366S1623ETS 16Mx64 400mil 168-pin PDF

    CDC2509

    Abstract: No abstract text available
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Rev. 0.1 Jan. 2001 PC100 Registered DIMM M377S0823ET3 M377S0823ET3 SDRAM DIMM (Intel 1.2 ver. Base)


    Original     		M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. M377S0823ET3 8Mx72 PDF

    M366S0823ETS

    Abstract: M366S0823ETS-C1L
    Text: M366S0823ETS PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S0823ETS PC100 M366S0823ETS 8Mx64 400mil 168-pin M366S0823ETS-C1L PDF

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S0823ET1 PC133 Registered DIMM M390S0823ET1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823ET1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M390S0823ET1 PC133 M390S0823ET1 8Mx72 400mil 18-bits 24-pin 168pin PC133 registered reference design PDF

    support pc133 sdram

    Abstract: No abstract text available
    Text: M366S0823ETS PC133/PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S0823ETS PC133/PC100 M366S0823ETS 8Mx64 400mil 168-pin support pc133 sdram PDF

    Untitled

    Abstract: No abstract text available
    Text: M374S1623ETS PC133/PC100 Unbuffered DIMM M374S1623ETS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ETS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S1623ETS PC133/PC100 M374S1623ETS 16Mx72 400mil 168-pin PDF

    CDC2509

    Abstract: samsung capacitance year code
    Text: M377S0823ET3 PC100 Registered DIMM Revision History Revision 0.1 January 15, 2001 - Drive IC is changed from ALVC162835 to ALVCF162835 and PLL is also changed from CDC2509 to CDCF2509. Revision 0.2 (Sep., 2001) • Changed the Notes in Operating AC Parameter.


    Original     		M377S0823ET3 PC100 ALVC162835 ALVCF162835 CDC2509 CDCF2509. 100MHz samsung capacitance year code PDF

    Untitled

    Abstract: No abstract text available
    Text: M374S0823ETS PC133/PC100 Unbuffered DIMM M374S0823ETS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823ETS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S0823ETS PC133/PC100 M374S0823ETS 8Mx72 400mil 168-pin PDF

    M374S0823ETS

    Abstract: M374S0823ETS-C1H M374S0823ETS-C1L
    Text: M374S0823ETS PC100 Unbuffered DIMM M374S0823ETS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823ETS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S0823ETS PC100 M374S0823ETS 8Mx72 400mil 168-pin M374S0823ETS-C1H M374S0823ETS-C1L PDF

    M366S1623ET0

    Abstract: M366S1623ET0-C1H M366S1623ET0-C1L
    Text: M366S1623ET0 PC100 Unbuffered DIMM M366S1623ET0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S1623ET0 PC100 M366S1623ET0 16Mx64 400mil 168-pin M366S1623ET0-C1H M366S1623ET0-C1L PDF

    M366S1623ET0

    Abstract: M366S1623ET0-C75
    Text: M366S1623ET0 PC133 Unbuffered DIMM Revision History Revision 0.0 Dec, 2000 • PC133 first published. REV. 0.0 Dec, 2000 M366S1623ET0 PC133 Unbuffered DIMM M366S1623ET0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M366S1623ET0 PC133 M366S1623ET0 16Mx64 400mil M366S1623ET0-C75 PDF