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64KX1 Result Highlights (5)

Part	Manufacturer	Description
GC355XD7LQ564KX17L	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
5962-86015-000	Renesas Electronics Corporation	64Kx1 SRAM 7187S
101490S10D	Renesas Electronics Corporation	64KX1 ECL I/O SRAM
101490S7Y	Renesas Electronics Corporation	64KX1 ECL I/O SRAM
101490S7Y8	Renesas Electronics Corporation	64KX1 ECL I/O SRAM

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Murata Manufacturing Co Ltd GC355XD7LQ564KX17L CAP CER 0.56UF 630V X7T 2220
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DigiKey	GC355XD7LQ564KX17L	Digi-Reel	985		1	1 $2.51 10 $1.627 100 $1.1568 1000 $1.1568 10000 $1.1568	Buy Now
	GC355XD7LQ564KX17L	Cut Tape	985		1	1 $2.51 10 $1.627 100 $1.1568 1000 $1.1568 10000 $1.1568	Buy Now
	GC355XD7LQ564KX17L	Reel	500		500	1 - 10 - 100 - 1000 $0.90627 10000 $0.80428	Buy Now
Avnet Americas	GC355XD7LQ564KX17L	Reel		16 Weeks	500	1 - 10 - 100 - 1000 $0.79259 10000 $0.79259	Buy Now
Mouser Electronics	GC355XD7LQ564KX17L		578			1 $2.4 10 $1.62 100 $1.16 1000 $0.866 10000 $0.749	Buy Now
Avnet Abacus	GC355XD7LQ564KX17L			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
FAG Bearings SDAF064KX1115-FI-OP Housings AFD, FAFD, SDD, SD, SAF2XX, SAF3XX, SAF6XX \| FAG Bearings (Schaeffler) SDAF064KX1115-FI-OP
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RS	SDAF064KX1115-FI-OP	Bulk		3 Weeks	1	1 $17518.59 10 $17518.59 100 $17518.59 1000 $17518.59 10000 $17518.59	Get Quote
FAG Bearings SDAF064KX1107-FI-OP Housings AFD, FAFD, SDD, SD, SAF2XX, SAF3XX, SAF6XX \| FAG Bearings (Schaeffler) SDAF064KX1107-FI-OP
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RS	SDAF064KX1107-FI-OP	Bulk		3 Weeks	1	1 $17518.58 10 $16979.54 100 $16979.54 1000 $16979.54 10000 $16979.54	Get Quote
FAG Bearings SDAF064KX1200-FI-OP Housings AFD, FAFD, SDD, SD, SAF2XX, SAF3XX, SAF6XX \| FAG Bearings (Schaeffler) SDAF064KX1200-FI-OP
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RS	SDAF064KX1200-FI-OP	Bulk		3 Weeks	1	1 $17518.58 10 $16979.54 100 $16979.54 1000 $16979.54 10000 $16979.54	Get Quote

64KX1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K6R1008V1D Abstract: No abstract text available Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify	Original	K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D	PDF
CY7C4255V Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V Text: fax id: 5422 CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V PRELIMINARY 8K/16K/32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to	Original	CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 8K/16K/32K/64Kx18 CY7C4255/65/75/85V CY7C42X5V CY7C4255V CY7C4265V CY7C4275V CY7C4285V	PDF
IBM0418A11NLAA Abstract: IBM0436A11NLAA Text: . Preliminary IBM0436A11NLAA IBM0418A11NLAA 32Kx36 & 64Kx18 SRAM Features • 32Kx36 or 64Kx18 organizations • Registered Outputs • 0.25 Micron CMOS technology • 30 Ohm Drivers • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Common I/O	Original	IBM0436A11NLAA IBM0418A11NLAA 32Kx36 64Kx18 32Kx36 nrrL3325 IBM0418A11NLAA IBM0436A11NLAA	PDF
MR0A16A Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35 Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System	Original	MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35	PDF
Untitled Abstract: No abstract text available Text: In-Circuit Programming of the MX26C1024A 1M-Bit 64Kx16 CMOS Multiple-Time-Programmable ROM Application Note 09/16/97 -This application note describes how to erase and program the MX26C1024A, 1M-bit MTP	Original	MX26C1024A 64Kx16) MX26C1024A, 12-volts 500ms	PDF
CS16LV40963 Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D	Original	32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D	PDF
K6R1016C10 Abstract: k6r1016c1c Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.	Original	K6R1016C1C-C/C-L, K6R1016C1C-I/C-P 64Kx16 48-fine K6R1016C1C-Z K6R1016C1C-F 80/Typ. 25/Typ. K6R1016C10 k6r1016c1c	PDF
Untitled Abstract: No abstract text available Text: K6R1016V1C-C/C-L, K6R1016V1C-I/C-P for AT&T CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.	Original	K6R1016V1C-C/C-L, K6R1016V1C-I/C-P 64Kx16 48-fine K6R1016V1C-Z K6R1016V1C-F I/O16 002MIN	PDF
CY7C4275V Abstract: CY7C4285V CY7C42X5V Text: fax id: 5422 CY7C4275V CY7C4285V PRELIMINARY 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4275V/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to	Original	CY7C4275V CY7C4285V 32K/64Kx18 CY7C4275V/85V CY7C42X5V CY7C4275V CY7C4285V	PDF
29F100T Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100 Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz	Original	MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100	PDF
km6161000bl7 Abstract: No abstract text available Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110\|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply	OCR Scan	KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7	PDF
G530T Abstract: No abstract text available Text: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a	OCR Scan	64Kx16 486/Pentium 15ns/20ns/25ns 67MHz Mb75Qflfl GG0b313 10H07-11-MAY95 HY6716110/111 4b750flfl 1DH07-11-MAY95 G530T	PDF
CY7C4255V Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17 Text: CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V V CYPRESS 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfac es. All are 18 bits wide and are pin/functionally compatible to	OCR Scan	CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 32K/64Kx CY7C4255V) CY7C4265V) CY7C4275V) CY7C4285V) 100-MHz 10-ns CY7C4255V CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17	PDF
metal case REGULATOR IC 7812 pin diagram Abstract: CY7C4275 CY7C4285 CY7C42X5 Text: fax id: 5416 ^;aaazgg st CY7C4275 CY7C4285 PRELIMINARY ; U I F lm c b ti 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries 32K x 18 (C Y 7 C 42 75 ) 64K x 18 (C Y 7 C 42 85 )	OCR Scan	CY7C4275 CY7C4285 32K/64Kx18 CY7C4275) CY7C4285) 100-MHz metal case REGULATOR IC 7812 pin diagram CY7C4285 CY7C42X5	PDF

Untitled Abstract: No abstract text available Text: ^ED I EDI8M1665C Electronic D«*igrtt Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto a	OCR Scan	EDI8M1665C 64Kx16 EDI8M1665C 1024K-bit 64Kx4 64Kx4) 64Kx16 28Kx8 256Kx4 I8M1665C	PDF
Untitled Abstract: No abstract text available Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a	OCR Scan	EDI8M1664C50/60/70/85/100 64Kx16 EDI8M1664C 32Kx8 32Kx16bitseach. DQ8-DQ15) EDI8M81664C EDI8U1664C50/60/70/85/100	PDF
Untitled Abstract: No abstract text available Text: fax id: 5416 CY7C4275 CY7C4285 32K/64Kx18 Deep Sync II FIFOs Featu res High-speed, low-power, first-in first-out FIFO memories 32K x 18 (CY7C4275) 64K x 18 (CY7C4285) 0.5 micron CMOS for optimum speed/power High-speed 100-MHz operation (10 ns read/write cycle	OCR Scan	CY7C4275 CY7C4285 32K/64Kx18 CY7C4275) CY7C4285) 100-MHz 68-pin 64-pin CY7C4275/85are	PDF
Untitled Abstract: No abstract text available Text: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100\|jA	OCR Scan	27V102 64Kx16) FDIP40W PLCC44 M27V102 M27C1024 M27V102 TSQP40	PDF
Untitled Abstract: No abstract text available Text: Issue 2.0: July 1069 MS1664BCX-25/35 64K MS1664BCX X 16 BiCMOS SRAM Module PRELIMINARY INFORMATION 1,048,576 High Speed BiCMOS Static RAM Module. Features Pin Definition Very Fast Access Times of 25/35 nS User Configuration at, 64Kx16,128Kx8 or 256Kx4 Industry Standard 40 Pin Ceramic DIP footprint	OCR Scan	MS1664BCX-25/35 MS1664BCX 64Kx16 128Kx8 256Kx4 16bit 2880mW 2020mW 1590mW MS16644BCXMB-25	PDF
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110\|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply	OCR Scan	KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B86 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of	OCR Scan	KM718B86 64Kx18 18-Bit KM718B86 66MHz ofKM718B86	PDF
Untitled Abstract: No abstract text available Text: 64Kx18 Synchronous SRAM KM718B86 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718B86 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support 66MHz of Intel secondary caches. It is organized as 65,536 words	OCR Scan	64Kx18 KM718B86 18-Bit KM718B86 66MHz	PDF
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0	OCR Scan	KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F	PDF
Untitled Abstract: No abstract text available Text: “H Y U N D A I H Y 6 7 1 6 1 0 0 /1 0 1 64K x 16 Bit SYNCHRONOUS CMOS SRAM P RELIM IN ARY DESCRIPTION This device integrates high-speed 64Kx16 SR A M core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge	OCR Scan	64Kx16 486/Pentium 6ns/9ns/12ns 75MHz 486/Pe 10H05-11-MAY95 HY6716100/101 1DH05-11-MAY95 HY6716100C	PDF

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64KX1 Search Results

64KX1 Result Highlights (5)

64KX1 Price and Stock

Murata Manufacturing Co Ltd GC355XD7LQ564KX17L

FAG Bearings SDAF064KX1115-FI-OP

FAG Bearings SDAF064KX1107-FI-OP

FAG Bearings SDAF064KX1200-FI-OP

64KX1 Datasheets Context Search

K6R1008V1D

CY7C4255V

IBM0418A11NLAA

MR0A16A

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CS16LV40963

K6R1016C10

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CY7C4275V

29F100T

km6161000bl7

G530T

CY7C4255V

metal case REGULATOR IC 7812 pin diagram

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