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    640MM Price and Stock

    Kinetic Technologies HK Ltd KTS1640EDV-MMEV01

    Power Management IC Development Tools
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics KTS1640EDV-MMEV01 17
    • 1 $42.65
    • 10 $42.65
    • 100 $42.65
    • 1000 $42.65
    • 10000 $42.65
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    Siretta Ltd ECHO16/40MM/UFL/S/S/17

    Antenna, Internal Mount, Ufl, 40Mm; Antenna Type:Gps; Frequency Min:1.576443Ghz; Frequency Max:1.574397Ghz; Antenna Mounting:Cable; Gain:16Db; Vswr:-; Input Power:-; Input Impedance:50Ohm; Antenna Polarisation:Right Hand Circular; Rohs Compliant: Yes |Siretta ECHO16/40MM/UFL/S/S/17
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark ECHO16/40MM/UFL/S/S/17 Bulk 99 1
    • 1 $14.43
    • 10 $13.6
    • 100 $11.51
    • 1000 $10.03
    • 10000 $10.03
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    Bimba Manufacturing Company EF-1640-MMTEE10

    Cylinder, single end rod, EF-I, 16mm Bore; Stroke: 40 mm(s); Standard; Magnetic | Bimba EF-1640-MMTEE10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS EF-1640-MMTEE10 Bulk 5 Weeks 1
    • 1 $108.49
    • 10 $108.49
    • 100 $108.49
    • 1000 $108.49
    • 10000 $108.49
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    Weidmüller Interface GmbH & Co. KG ELS 16/40 MM GE

    Label; polyester; yellow; -40÷150°C; slide; UL94HB; W: 16mm; H: 40mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME ELS 16/40 MM GE 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.186
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    Weidmüller Interface GmbH & Co. KG ELS 16/40 MM WS

    Label; polyester; white; -40÷150°C; slide; UL94HB; W: 16mm; H: 40mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME ELS 16/40 MM WS 2,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.186
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    640MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4450DY

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
    Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF SI6926DQ 2502P CBHK741B019 F63TNR FDW2502P SI6926DQ

    SI9955DY

    Abstract: fairchild NDS 1182
    Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9955DY fairchild NDS 1182

    Untitled

    Abstract: No abstract text available
    Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V


    Original     		PDF FDS2670

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY

    Untitled

    Abstract: No abstract text available
    Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9945DY

    Untitled

    Abstract: No abstract text available
    Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4412DY

    2539a

    Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
    Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate


    Original     		PDF FDS5670 FDS5670 2539a IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL

    AA MARKING CODE SO8

    Abstract: No abstract text available
    Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDS6680S FDS6680S FDS6680 AA MARKING CODE SO8

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
    Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.


    Original     		PDF FDS2570 CBVK741B019 F011 F63TNR F852 FDS2570 FDS9953A L86Z

    CBVK741B019

    Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
    Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.


    Original     		PDF MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm

    FDS9953A

    Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
    Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS9953A FDS9953A 9953A CBVK741B019 F011 F63TNR F852 L86Z

    FDD6672A

    Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
    Text: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDD6672A O-252 FDD6672A 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680

    FDW2501NZ

    Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
    Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDW2501NZ FDW2501NZ 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P

    2506p

    Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
    Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDW2506P 2506p diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P

    CBVK741B019

    Abstract: F63TNR FDD6680 FDD6690A
    Text: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior


    Original     		PDF FDD6690A O-252 CBVK741B019 F63TNR FDD6680 FDD6690A

    D 1437 transistor

    Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
    Text: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms


    Original     		PDF SOIC-16 330cm D 1437 transistor CBVK741B019 F63TNR L86Z NDM3000 NDM3001

    F63TNR

    Abstract: FDFS2P102A soic-8 33a
    Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.


    Original     		PDF FDFS2P102A F63TNR FDFS2P102A soic-8 33a

    FDS6688

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
    Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDS6688 FDS6688 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56

    FDS9945

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
    Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDS9945 FDS9945 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
    Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.


    Original     		PDF FDS3812 CBVK741B019 F011 F63TNR F852 FDS3812 FDS9953A L86Z

    FDS*6609A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		PDF FDS6609A FDS*6609A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
    Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDS6692 CBVK741B019 F011 F63TNR F852 FDS6692 FDS9953A L86Z