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    638NM Search Results

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    638NM Price and Stock

    Cinch Connectivity Solutions ADT-2638-NM-SCF-02

    CONN ADAPT SC JACK TO N PLUG
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    DigiKey ADT-2638-NM-SCF-02 Bulk
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    Woodhead Molex 5638NM

    Max-Loc Grip .75-.87 W/Nut F-4 Non-Metal |Molex/woodhead 5638NM
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    Newark 5638NM Bulk 3 1
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    Master Electronics 5638NM
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    ROHM Semiconductor RLD63PZCA-00A

    Laser Diodes DIODE LASER
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    TTI RLD63PZCA-00A Tray 500
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    Dialight 5219637F

    Standard LEDs - Through Hole Red Translucent Hi Bright
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    TTI 5219637F Bulk 1,800
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    Dialight 5219628F

    Standard LEDs - Through Hole DISCRETE LED LAMP
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    TTI 5219628F Bulk 2,400
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    638NM Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63153AT preliminary AIGaInP Laser Diode 638nm/150mW Outline Features: • High optical output power: 150mW  Shorter wavelength: 638nm Typ.  Small package: 3.8mm  Low operating current: 230mA Typ.  Low operating voltage: 2.7V Typ.


    Original     		PDF HL63153AT 638nm/150mW 150mW 638nm 230mA HL63153AT D00xxx-PB

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6321G/22G AIGaInP Laser Diode 638nm/15mW Features: Outline • Optical output power: 15mW CW  Visible light output: 638nm Typ.  Low operating current: 100mA Max.  Low operating voltage: 2.7V Max.  TM mode oscillation  Single transverse mode


    Original     		PDF HL6321G/22G 638nm/15mW 638nm 100mA HL6321G/22G

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63153AT AIGaInP Laser Diode 638nm/150mW Outline Features: 0.8+/-0.1 0.25 +0 3.8 -0.025 0.9+/-0.2 3.0+/-0.3 2.5+/-0.1 • High optical output power: 150mW  Shorter wavelength: 638nm Typ.  Small package: 3.8mm  Low operating current: 230mA Typ.


    Original     		PDF HL63153AT 638nm/150mW 230mA 638nm 150mW HL63153AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6312G AIGaInP Laser Diode 638nm/5mW Features: Outline • Visible light output:638nm Typ.  Optical output power: 5mW CW  Low operating voltage: 2.7V Max.  Built-in photodiode for monitoring laser output  TM mode oscillation  Single transverse mode


    Original     		PDF HL6312G 638nm/5mW 638nm HL6312G

    OCLARO

    Abstract: No abstract text available
    Text: Data Sheet HL6354MG/55MG AIGaInP Laser Diode Outline 638nm/7mW Features: • Optical output powr: 5mW CW  Visible light output:638nm Typ.  Low operating current: 27mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: 50℃  TM mode oscillation


    Original     		PDF HL6354MG/55MG 638nm 638nm/7mW HL6354MG/55MG OCLARO

    Oclaro

    Abstract: violet laser diode Oclaro LASER
    Text: Data Sheet HL6319G/20G AIGaInP Laser Diode Outline 638nm/10mW Features: • Optical output powr: 10mW CW  Visible light output:638nm Typ.  Low operating current: 95mA Max.  Low operating voltage: 2.7V Max.  Single transverse mode  TM mode oscillation


    Original     		PDF HL6319G/20G 638nm 638nm/10mW HL6319G/20G Oclaro violet laser diode Oclaro LASER

    HL6321

    Abstract: No abstract text available
    Text: Data Sheet HL6321G/22G AIGaInP Laser Diode Outline 638nm/15mW Features: • Optical output powr: 15mW CW  Visible light output: 638nm Typ.  Low operating current: 100mA Max.  Low operating voltage: 2.7V Max.  TM mode oscillation  Single transverse mode


    Original     		PDF HL6321G/22G 638nm 100mA 638nm/15mW HL6321G/22G HL6321

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63133DG AIGaInP Laser Diode 638nm/170mW Features: Outline • Visible light output: 638nm Typ.  Optical output power: 170mW CW  Single transverse mode  Low operating current: 250mA Typ.  Low operating voltage: 2.8V Typ.  Small package: 5.6mm


    Original     		PDF HL63133DG 638nm/170mW 638nm 170mW 250mA HL63133DG

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63193MG AIGaInP Laser Diode 638nm/700mW Outline Features: • Shorter wavelength: 638nm Typ. · High optical output power: 700mW · Small package: f 5.6mm · Multi transverse mode · TM mode oscillation Applications: unit:mm Internal Circuit


    Original     		PDF HL63193MG 638nm/700mW 638nm 700mW HL63193MG

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63603TG AIGaInP Laser Diode 638nm/120mW Features: Outline • Visible light output: 638nm Typ.  Optical output power: 120mW CW  Single transverse mode  Low operating current: 165mA Typ.  Low operating voltage: 2.7V Typ.  Small package: 3.8mm


    Original     		PDF HL63603TG 638nm/120mW 638nm 120mW 165mA HL63603TG

    Oclaro LASER

    Abstract: No abstract text available
    Text: Data Sheet HL63101MG/102MG AIGaInP Laser Diode 638nm/7mW Features: Outline • Optical output powr: 5mW CW  Visible light output:637nm Typ.  Low operating current: 20mA Typ.  Low operating voltage: 2.2V Typ.  Operating temperature: +60℃ 


    Original     		PDF HL63101MG/102MG 638nm/7mW 637nm HL63101MG/102MG Oclaro LASER

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6319G/20G AIGaInP Laser Diode 638nm/10mW Features: Outline • Optical output power: 10mW CW  Visible light output:638nm Typ.  Low operating current: 95mA Max.  Low operating voltage: 2.7V Max.  Single transverse mode  TM mode oscillation


    Original     		PDF HL6319G/20G 638nm/10mW 638nm HL6319G/20G

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6354MG/55MG AIGaInP Laser Diode 638nm/7mW Features: Outline • Optical output power: 5mW CW  Visible light output:638nm Typ.  Low operating current: 27mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: 50℃  TM mode oscillation


    Original     		PDF HL6354MG/55MG 638nm/7mW 638nm HL6354MG/55MG

    P1073

    Abstract: ML520G54
    Text: MITSUBISHI LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G54 DESCRIPTION FEATURES • High Output Power: 110mW CW Mitsubishi ML5xx54 is a high-power, high-efficient semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)


    Original     		PDF ML5xx54 ML520G54 110mW 638nm 110mW. TLDE-P1073 P1073 ML520G54

    LTD-4608CB

    Abstract: LTD-2601JG LTS-4802KR ltd5721 LTC-2621CB LTP-4323JG LTS-5001AJR 6740k LTP-7188KD LTS-2801AJR
    Text: 071 L ED Display L ite-On LED displays provide high brightness, contrast, and wide viewing angles for performance in flat panel display solutions. 120°C high operation temperature displays also available for special requirement purpose. For colors include blue, green, yellow, amber, orange and red utilizing InGaN, AlInGaP, GaAsP and


    Original     		PDF MIL-STD-202 MIL-STD-750 MIL-STD-883 30min LTD-4608CB LTD-2601JG LTS-4802KR ltd5721 LTC-2621CB LTP-4323JG LTS-5001AJR 6740k LTP-7188KD LTS-2801AJR

    650nm laser diode 200mw

    Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
    Text: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,


    Original     		PDF 405nm 830nm 635nm 808nm 650nm laser diode 200mw DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo

    ML520G55

    Abstract: ML5xx55 Semiconductor Laser International Corporation
    Text: LASER DIODES ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 150mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)


    Original     		PDF ML5xx55 ML520G55 150mW 95mW/mA 638nm 150mW. TLDE-P1294 ML520G55 Semiconductor Laser International Corporation

    ML520G55

    Abstract: ML5xx55
    Text: MITSUBISHI LASER DIODES E V I T A T N TE TYPE NAME ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 180mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)


    Original     		PDF ML5xx55 ML520G55 180mW 95mW/mA 638nm 180mW. TLDE-P1072 ML520G55

    ML501P73

    Abstract: Semiconductor Laser International Corporation
    Text: MITSUBISHI LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light


    Original     		PDF ML5xx73 ML501P73 ML501P73 638nm Duty33% frequency50Hz TLDE-P1123 Semiconductor Laser International Corporation

    2 Wavelength Laser Diode

    Abstract: Diode 80V 0.1A laser diode 405nm Analog Technologies 405nm laser diode "Key Switch" ATMF102 Laser beam remote control switch 638nm
    Text: Analog Technologies, Inc. ATMF102 Mode-Hop-Free Laser Module Features Applications • • • • • • • • • • Mode-hop-free and single mode High wavelength stability Very low noise Small size and low cost CDHR compliant built-in shutter, key switch and emission indicator.


    Original     		PDF ATMF102 ATMF102 2 Wavelength Laser Diode Diode 80V 0.1A laser diode 405nm Analog Technologies 405nm laser diode "Key Switch" Laser beam remote control switch 638nm

    Untitled

    Abstract: No abstract text available
    Text: Wide Optical Spectrum Laser Power Monitor IC ISL58327 Features The ISL58327 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light source applications, such as laser based projectors. The ISL58327 has two banks of three sets of gain registers. For a


    Original     		PDF ISL58327 ISL58327 400nm 1000nm. 5M-1994 FN6577

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light


    Original     		PDF ML5xx73 ML501P73 ML501P73 638nm TLDE-P1245

    DL-4146-101

    Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
    Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division


    Original     		PDF

    ml520

    Abstract: No abstract text available
    Text: LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM ML520G54 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx54 is a high-power, high-efficient • High Output Power: 110mW CW semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)


    Original     		PDF ML5xx54 ML520G54 110mW 638nm 110mW. TLDE-P1248 ml520