P1073
Abstract: ML520G54
Text: MITSUBISHI LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G54 DESCRIPTION FEATURES • High Output Power: 110mW CW Mitsubishi ML5xx54 is a high-power, high-efficient semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)
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ML5xx54
ML520G54
110mW
638nm
110mW.
TLDE-P1073
P1073
ML520G54
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ML520
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML5xx12 LD SERIES FOR PUMPING, COSMETIC ML520G12 TYPE NAME Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES ML520G12 is a high-power, high-efficient semiconductor laser diode which provides a stable
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ML5xx12
ML520G12
ML520G12
805nm
805nm
ML520
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ML520G55
Abstract: ML5xx55 Semiconductor Laser International Corporation
Text: LASER DIODES ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 150mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)
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ML5xx55
ML520G55
150mW
95mW/mA
638nm
150mW.
TLDE-P1294
ML520G55
Semiconductor Laser International Corporation
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ML520G55
Abstract: ML5xx55
Text: MITSUBISHI LASER DIODES E V I T A T N TE TYPE NAME ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 180mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)
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ML5xx55
ML520G55
180mW
95mW/mA
638nm
180mW.
TLDE-P1072
ML520G55
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ml520
Abstract: No abstract text available
Text: LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM ML520G54 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx54 is a high-power, high-efficient • High Output Power: 110mW CW semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)
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ML5xx54
ML520G54
110mW
638nm
110mW.
TLDE-P1248
ml520
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ML520G71
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G71 Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides
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ML5xx71
ML520G71
ML520G71
300mW.
300mW
638nm
45tives
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G54 DESCRIPTION FEATURES Mitsubishi ML5xx54 is a high-power, high-efficient • High Output Power: 110mW CW semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)
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ML5xx54
ML520G54
110mW
638nm
110mW.
TLDE-P1248
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ML520G72
Abstract: ML5xx72
Text: MITSUBISHI LASER DIODES ML5xx72 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G72 DESCRIPTION FEATURES • High Output Power: 500mW CW Mitsubishi ML520G72 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx72
ML520G72
500mW
ML520G72
500mW.
638nm
Duty25%
frequency50Hz
TLDE-P1074
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ML5xx71
Abstract: Ml5x
Text: LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G71 DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW. This LD has broad-stripe structure which enables
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ML5xx71
ML520G71
300mW
638nm
ML520G71
300mW.
TLDE-P1251
Ml5x
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML5xx51 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G51 Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES Mitsubishi ML520G51 is a high-power, highefficient semiconductor laser diode which provides
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ML5xx51
ML520G51
ML520G51
150mW.
150mW
638nm
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ML520G54
Abstract: ML5xx54
Text: MITSUBISHI LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G54 / ML529P54 Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES • High Output Power: 110mW CW Mitsubishi ML5xx54 is a high-power, high-efficient
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ML5xx54
ML520G54
ML529P54
110mW.
110mW
638nm
ML520G54)
ML529P54)
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM ML520G71 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW. This LD has broad-stripe structure which enables
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ML5xx71
ML520G71
300mW
638nm
ML520G71
300mW.
TLDE-P1251
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ML520G73
Abstract: ML520 638nm Ml5x
Text: E V I T A T N TE TYPE NAME LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM ML520G73 DESCRIPTION FEATURES • High Output Power: 500mW CW Mitsubishi ML520G73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML520G73
500mW
638nm
ML520G73
500mW.
TLDE-P1324
ML520
638nm
Ml5x
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ML520G71
Abstract: p1068
Text: MITSUBISHI LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G71 DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW.
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ML5xx71
ML520G71
ML520G71
300mW.
300mW
638nm
TLDE-P1068
p1068
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ML520G54
Abstract: ML5xx54
Text: MITSUBISHI LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM ML520G54 / ML529P54 TYPE NAME Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES • High Output Power: 110mW CW Mitsubishi ML5xx54 is a high-power, high-efficient
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ML5xx54
ML520G54
ML529P54
110mW
638nm
110mW.
ML520G54)
ML529P54)
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ML520
Abstract: ML5xx51
Text: MITSUBISHI LASER DIODES ML5xx51 LD SERIES FOR DISPLAY SYSTEM ML520G51 TYPE NAME Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES Mitsubishi ML520G51 is a high-power, highefficient semiconductor laser diode which provides
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ML5xx51
ML520G51
ML520G51
150mW.
150mW
638nm
ML520
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML5xx12 LD SERIES FOR PUMPING, COSMETIC TYPE NAME ML520G12 Please note that this data sheet may be changed without any notice. DESCRIPTION FEATURES ML520G12 is a high-power, high-efficient semiconductor laser diode which provides a stable
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ML5xx12
ML520G12
ML520G12
805nm
805nm
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ML5207
Abstract: ML5227 MK5207 ML522 QFP44-P-910-0 ML5227-ML5207 TQFP-48P ML5207 QFP44-P-910-0.80-2K li-ion
Text: OKI SEMICONDUCTOR CO., LTD. TEL: +81 42 663-1111 FAX: +81 (42) 665-6620 550-1, Higashiasakawacho, Hachioji-shi 193-8550, Japan 2009.12.7 OKI SEMICONDUCTOR 开始批量生产多单元串联 Li-ion 电池管理 IC 芯片组 支持 5~13 个电池的 Li-ion 电池盒，最适合于电动自行车和电动工具的应用。
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MK5207"
ML5207
ML5227
MK5207
ML5227-ML5207
ML5207
ML5227
MK5207
ML522
QFP44-P-910-0
ML5227-ML5207
TQFP-48P
ML5207 QFP44-P-910-0.80-2K
li-ion
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Untitled
Abstract: No abstract text available
Text: WIDEBAND TRANSFORMERS High Reliability Wideband Transformers • ■ ■ ■ Small wideband transformer: 7.2 x 6.43 × 4.45 mm high 300 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating Tin-lead terminations for the best possible board adhesion
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packag00
520RFA04B1
MS099-2
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Untitled
Abstract: No abstract text available
Text: WIDEBAND TRANSFORMERS High Reliability Wideband Transformers • Small wideband transformer: 7.2 x 6.43 × 4.45 mm high ■ 300 V interwinding isolation, 1/4 Watt RF input power ■ 250 mA max current rating. Core material Ferrite Terminations tin-silver-copper over tin over nickel over phos bronze.
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ML520RFA04B1LZ
ML099-2
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MK5207
Abstract: ML5207 ML5227-ML5207 ML5227 QFP44-P-910-0 ML5207 QFP44-P-910-0.80-2K
Text: OKI SEMICONDUCTOR CO., LTD. TEL: +81 42 663-1111 FAX: +81 (42) 665-6620 550-1, Higashiasakawacho, Hachioji-shi 193-8550, Japan 2009 년 12 월 7 일 OKI SEMICONDUCTOR 가 다중 셀 직렬 Li-ion 전지 감시 IC 칩셋 양산을 시작 5 셀~13 셀의 Li-ion 배터리 팩을 지원하여 전동 자전거, 전동 공구에 최적의 구성
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MK5207
ML5207
ML5227
ML5227-ML5207
ML5207:
QFP44-P-910-0
80-2K)
MK5207
ML5207
ML5227-ML5207
ML5227
ML5207 QFP44-P-910-0.80-2K
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Untitled
Abstract: No abstract text available
Text: WIDEBAND TRANSFORMERS High Reliability Wideband Transformers • Small wideband transformer: 7.2 x 6.43 × 4.45 mm high ■ 300 V interwinding isolation, 1/4 Watt RF input power ■ 250 mA max current rating. Core material Ferrite Terminations tin-silver-copper over tin over nickel over phos bronze.
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ML520RFA04B1LZ
ML099-2â
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ML5203
Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23
Text: IRLML6402PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRLML6402PbF
OT-23/TO-263AB)
EIA-481
EIA-541.
ML5203
ML5103
ML2803
ML6302
sot-23 marking code pe
AN-994
marking code pe sot-23
MOSFET IRL
SOT-23 marking code BS
marking BS SOT-23
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U100
Abstract: H150
Text: o ^ZLW .- a . - X ML520A ¿ R - r t . &Î7A ~x'XÂ'A?t A b so lu te Maximum R a tin g s/T a=25°C * <£ vCBO 1500 V vCEO 600 V vEB0 6 V I V 7 ï T&M TO 3 A \ £ — ' S Z l \ s ? ? Tfcjffi ‘ cp PC 6 A 50 ÏÏ ISO pc 3 1 / ? ? •* < — *> TtiH - X Ì 7 ? &; j±
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OCR Scan
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N1520A
U100
H150
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