Untitled
Abstract: No abstract text available
Text: W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333Mb/s* 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25mm x 25mm, 625mm2 Reduced trace lengths for lower parasitic capacitance
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W3E32M64S-XBX
32Mx64
333Mb/s*
625mm2
256MByte
333Mbs,
333Mbs
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PDF
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LR2728
Abstract: LR4527 LR2512 LR2725 LR2725-4W LR2512-2W LR4527-5W LR1206 4743a LR2010
Text: Metal Alloy Low-Resistance Resistor • Construction ■ Application — — — — — — — — — — Power supply Battery pack DIY tools Inverter/Converter AC/DC, DC/DC, DC/AC Measurable instrument Consumer electronics Note book PC power pack LED driver
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LR1206,
LR2010,
LR2512
LR2725,
LR2728
LR4527
LR4527
LR2512
LR2725
LR2725-4W
LR2512-2W
LR4527-5W
LR1206
4743a
LR2010
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PDF
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Untitled
Abstract: No abstract text available
Text: 35 /,0,1$5<,1 250$7,21 / '*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH DQG0ESV 3DFNDJH xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 99&RUH3RZHUVXSSO\
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265mm2
1060mm2
625mm2
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PDF
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M64V-XBX
8Mx64
125MHz
WEDPN8M64V-XBX
64MByte
512Mb)
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply
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L9D112G80BG4
LDS-L9D112G80BG4-A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2M x 32 SRAM Multi-Chip Package Optimum Density and Performance in One Package W82M32V-XBX* Performance Features • Access Times of 12ns, 15ns, 17ns and 20ns. • W82M32V-XBX – +3.3V ±5% Power Supply • Low Power CMOS • Commercial, industrial and military temperature
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W82M32V-XBX*
W82M32V-XBX
625mm2
W82M32V-X
268mm
1072mm
A0-20
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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W3E32M64S-XBX
32Mx64
266Mb/s
625mm2
256MByte
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PDF
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Z-Power LED
Abstract: why we use heat sink compound LED seoul semiconductor LED white 1W Aluminum Base LED PCB 5W led junction thermal resistance LED 1w thermal analysis of heat sink of heat sink
Text: Thermal Management Guide 2005.8. SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev 3 1. Introduction LED have the special character that LED break out radiant power and heat when It is operating. Recently photo efficiency of LED is just 20% and almost
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7410
Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache
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7410E
WED3C7410E16M-XBHX*
256Kx72
25x21mm,
625mm2
352mm2
1329mm2
525mm2
x64/x72
7410
WED3C7410E16M-XBHX
WED3C750A8M-200BX
WED3C7558M-XBX
90Sn10Pb
63SN 37PB
CBGA 255 motorola
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PDF
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W3E32M64S-XBX
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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W3E32M64S-XBX
32Mx64
333Mb/s
625mm2
256MByte
333Mbs
W3E32M64S-XBX
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PDF
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PC00401
Abstract: No abstract text available
Text: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. Part Number *LCMA6-5-C *LCMA6-6-C *LCMA6-8-C LCMA10-5-C LCAM10-6-C LCMA10-8-C LCMA10-10-C *LCMA16-5-C *LCMA16-6-C *LCMA16-8-C *LCMA16-10-C
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LCMA10-5-C
LCAM10-6-C
LCMA10-8-C
LCMA10-10-C
LCMA16-5-C
LCMA16-6-C
LCMA16-8-C
LCMA16-10-C
LCMA25-6-C
LCMA25-8-C
PC00401
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PDF
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16M x 16 DDR TSOP-66
Abstract: No abstract text available
Text: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,
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32Mx64
333Mb/s
625mm2
W3E32M64SA-XBX
datHz/266Mbs
166MHz/333Mbs
16M x 16 DDR TSOP-66
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PDF
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CI 7410
Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Text: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications
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PC7410
256Kx72
16Mbit
BP123
CI 7410
7410 frequency divider
PIN CONFIGURATION 7410
cga motorola
7410
transistor 7410
Multi-Chip Modules motorola
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PDF
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Untitled
Abstract: No abstract text available
Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache
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7410E
WED3C7410E16M-XBHX*
256Kx72
625mm2
352mm2
1329mm2
525mm2
x64/x72
WED3C7410HITCE
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Diodes Incorporated 17-33
Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
Text: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply
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L9D125G80BG4
LDS-L9D125G80BG4-C
Diodes Incorporated 17-33
CKE 2009
cke02
RING TERM M6 2,5mm2
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PDF
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Untitled
Abstract: No abstract text available
Text: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M72S-XB3X
32Mx72
333Mbs*
256MByte
256MB
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PDF
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Untitled
Abstract: No abstract text available
Text: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M72S-XSBX
32Mx72
333Mbs*
256MByte
256MB
333Mbs
333Mbs,
333Mbs
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PDF
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WEDPN16M64V-XBX
Abstract: No abstract text available
Text: WEDPN16M64V-XBX 16Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a
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WEDPN16M64V-XBX
16Mx64
125MHz
128MByte
864-bit
100MHz
WEDPN16M64V-XBX
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PDF
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WED3C750A8M-200BX
Abstract: No abstract text available
Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications
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750TM/8Mbit
WED3C7508M-200BX
128Kx72
WED3C750A
WED3C7558M-300BX
WED3C750A8M-200BX*
WEDPN8M72V-XBX*
750sbd
WED3C750A8M-200BX
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W332M64V-XBX
Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
Text: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing
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W332M64V-XBX
32Mx64
133MHz
256MByte
728-bit
100MHz
125MHz
W332M64V-XBX
WEDPN16M64V-XBX
WEDPN4M64V-XBX
WEDPN8M64V-XBX
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PDF
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SSC9512
Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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O03EH0
STR-X6768N
TMA256B-L
STR-X6769
TMB166S-L
STR-X6769B
TMB206S-L
STR-Y6453
VR-60SS
STR-Y6456
SSC9512
STR-W6750
B1560 equivalent
STRW6252
str3a100
sanken audio modules
24v dc soft start motor control diagram
DARLINGTON TRANSISTOR ARRAY
strw6053
inverter 12v to 220 ac mosfet based
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sram 1mbyte 3.3v
Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
Text: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications
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PC755B
128Kx72
PCX745BVZFUxxxLE
PC7410M16MGxxxLE
PCX755B
BP123
sram 1mbyte 3.3v
16x16 bga
Multi-Chip Package MEMORY
TQFP 100 PACKAGE footprint
with or without underfill
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PDF
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Untitled
Abstract: No abstract text available
Text: W3E32M64SA-XBX 32Mx64 DDR SDRAM FEATURES GENERAL DESCRIPTION DDR SDRAM rate = 200, 250, 266, 333Mb/s* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M64SA-XBX
32Mx64
333Mb/s*
256MByte
625mm2
256MB
333Mbs,
333Mbs
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PDF
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KL SN 102 94v0
Abstract: ASTM d4066 ms3367 RBS 6601 Installation guide for RBS 6000 SHK 55-65 Scanbe ejector kit rbs 6501 cr40 steel 11633-1 SCANBE KL SN 102 94v
Text: RI-55006 cat cover for pdf 8/5/02 9:48 AM Page 2 2002 NEW PRODUCTS DISTRIBUTOR LOCATIONS WORLDWIDE RICHCO USA Please call Customer Service 773 539-4060, Samples (800) 621-1892, or visit www.richcoinc.com for your nearest distributor location. EUROPE Alldistri Handelsges. m.b.H.
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RI-55006
3000-Rupea-Brasov
SR-3230
OFS90
WIT-30AR
PPR-10
KL SN 102 94v0
ASTM d4066 ms3367
RBS 6601
Installation guide for RBS 6000
SHK 55-65
Scanbe ejector kit
rbs 6501
cr40 steel
11633-1 SCANBE
KL SN 102 94v
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PDF
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