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    60N60B2D1 Search Results

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    60N60B2D1 Price and Stock

    IXYS Corporation IXGR60N60B2D1

    IGBT 600V 75A 250W ISOPLUS247
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    DigiKey IXGR60N60B2D1 Tube
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    IXYS Corporation IXGX60N60B2D1

    IGBT 600V 75A 500W PLUS247
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    New Advantage Corporation IXGX60N60B2D1 35 1
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    • 100 $21.63
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    IXYS Corporation IXGK60N60B2D1

    IGBT 600V 75A 500W TO264
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    IXYS Integrated Circuits Division IXGX60N60B2D1

    IGBT DIS.SINGLE 60A 600V H.FAST PLUS247
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    Ozdisan Elektronik IXGX60N60B2D1 44
    • 1 $17.36022
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    • 100 $16.2245
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    60N60B2D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


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    60N60B2D1 IC110 O-264 PLUS247 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


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    ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


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    ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A PDF

    60n60b

    Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


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    ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A PDF

    60N60B2D1

    Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


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    60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 PDF

    PLUS247

    Abstract: IXGR60N60B2D1
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


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    ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A PLUS247 IXGR60N60B2D1 PDF

    60n6

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


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    60N60B2D1 IC110 2x61-06A 60n6 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF