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    60025F Search Results

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    60025F Price and Stock

    MACOM CMPA0060025F

    IC RF AMP 20MHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060025F Tray 95 1
    • 1 $968.03
    • 10 $917.964
    • 100 $917.964
    • 1000 $917.964
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    Mouser Electronics CMPA0060025F
    • 1 $861.12
    • 10 $861.12
    • 100 $861.12
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    Richardson RFPD CMPA0060025F 10
    • 1 -
    • 10 $797.63
    • 100 $797.63
    • 1000 $797.63
    • 10000 $797.63
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    MACOM CMPA2560025F

    IC RF AMP 2.5GHZ-6GHZ 780019
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA2560025F Tray 19 1
    • 1 $821.58
    • 10 $779.089
    • 100 $779.089
    • 1000 $779.089
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    Mouser Electronics CMPA2560025F 3
    • 1 $858.08
    • 10 $858.08
    • 100 $858.08
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    Richardson RFPD CMPA2560025F 1
    • 1 $953.38
    • 10 $953.38
    • 100 $953.38
    • 1000 $953.38
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    Micro Connectors Inc M60-025F

    CBL ASSY FTYPE PLUG TO PLUG 25'
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    DigiKey M60-025F Bag 12 1
    • 1 $16.49
    • 10 $14.84
    • 100 $11.99
    • 1000 $11.99
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    MACOM CMPA0060025F1-AMP

    0.02-6.0GHZ, AMP W/ CMPA0060025F
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    DigiKey CMPA0060025F1-AMP Bulk 5 1
    • 1 $1538.12
    • 10 $1538.12
    • 100 $1538.12
    • 1000 $1538.12
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    Richardson RFPD CMPA0060025F1-AMP 2 1
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    MACOM CMPA0060025F1

    IC RF AMP GPS 20MHZ-6GHZ 440219
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA0060025F1 Tray 4 1
    • 1 $968.03
    • 10 $917.964
    • 100 $917.964
    • 1000 $917.964
    • 10000 $917.964
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    Mouser Electronics CMPA0060025F1 73
    • 1 $987.4
    • 10 $987.4
    • 100 $987.4
    • 1000 $987.4
    • 10000 $987.4
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    Richardson RFPD CMPA0060025F1 26 1
    • 1 $881.34
    • 10 $881.34
    • 100 $881.34
    • 1000 $881.34
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    Find more 60025F price and stock on Findchips.com

    60025F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22

    CMPA2560025F

    Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T

    Untitled

    Abstract: No abstract text available
    Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F

    CMPA2560025F

    Abstract: 920pF
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F 920pF

    Untitled

    Abstract: No abstract text available
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 6002ree

    CMPA2560025F

    Abstract: CMPA2560025F-TB
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB

    CMPA2560025F

    Abstract: CMPA2560025F-TB JESD22 A114D
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F CMPA2560025F-TB JESD22 A114D

    Untitled

    Abstract: No abstract text available
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F

    TBTH06M20

    Abstract: CMPA0060025F
    Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB

    CMPA2560025F

    Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
    Text: PRELIMINARY 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408

    cree

    Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
    Text: PRELIMINARY 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F cree Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20

    CMPA2560025F

    Abstract: CMPA2560025F-TB c08bl242x
    Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x