5630 SOT23
Abstract: FDN5630
Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 SOT23
FDN5630
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5630 PKG
Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 PKG
5630 SOT23
marking code 10 sot23
FDN5630
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5630 PKG
Abstract: FDN5630 sot23 footprint
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
5630 PKG
FDN5630
sot23 footprint
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2N7002K
Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method
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2N7002K
OT-23
2N7002K
E5 marking sot23
6 wc sot23
marking EA SOT23
E2- marking
h8 marking
sot23 marking JB
E5 Marking
Marking E5
JA MARKING SOT23
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MMBT2222A
Abstract: PN2222A PZT2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol
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MMBT2222A
PZT2222A
OT-23
OT-223
MMBT2222A
PN2222A
PZT2222A
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BCR133
Abstract: BCR133F BCR133L3 SEMH11
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
BCR133
BCR133F
BCR133L3
SEMH11
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Untitled
Abstract: No abstract text available
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
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Untitled
Abstract: No abstract text available
Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching
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BCR133.
/SEMH11
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11
EHA07184
EHA07174
BCR133
BCR133F
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CBVK741B019
Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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MMBTA13
PZTA13
OT-23
OT-223
MPSA14
CBVK741B019
F63TNR
MMBTA13
MPSA13
PN2222N
PZTA13
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MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
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Untitled
Abstract: No abstract text available
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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MPSA13
MMBTA13
PZTA13
MPSA13
MMBTA13
OT-23
OT-223
MPSA14
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Untitled
Abstract: No abstract text available
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
OT-23
OT-223
MPSA64
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transistor bel 100
Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
transistor bel 100
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor
pnp transistor bel 188
bel 188 transistor pnp
Darlington transistor to 92
CBVK741B019
F63TNR
MMBTA64
MPSA64
PN2222N
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MPSA56
Abstract: bel 188 transistor pnp 4963N CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Text: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA56
PZTA56
OT-23
OT-223
MPSA56
bel 188 transistor pnp
4963N
CBVK741B019
F63TNR
MMBTA56
PN2222N
PZTA56
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BEL 188 pnp TRANSISTOR characteristics
Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA64
PZTA64
OT-23
OT-223
BEL 188 pnp TRANSISTOR characteristics
bel 188 transistor pnp
pnp transistor bel 188
F63TNR
MMBTA64
MPSA64
PN2222N
PZTA64
CBVK741B019
bel 188 transistor
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ic 3843
Abstract: PZTA06 SOT-223 CBVK741B019 F63TNR MMBTA06 MPSA06 PN2222N PZTA06 SOT23 JEDEC standard orientation pad size MPSA06 fairchild transistor
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA06
PZTA06
OT-23
OT-223
ic 3843
PZTA06 SOT-223
CBVK741B019
F63TNR
MMBTA06
MPSA06
PN2222N
PZTA06
SOT23 JEDEC standard orientation pad size
MPSA06 fairchild transistor
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PZTA56 SOT-223
Abstract: CBVK741B019 F63TNR MMBTA56 MPSA56 PN2222N PZTA56 pnp transistor bel 188
Text: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA56
PZTA56
OT-23
OT-223
PZTA56 SOT-223
CBVK741B019
F63TNR
MMBTA56
MPSA56
PN2222N
PZTA56
pnp transistor bel 188
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MPSA06
Abstract: MPSA06 fairchild transistor PZTA06 SOT-223 LA 3843 CBVK741B019 F63TNR MMBTA06 PN2222N PZTA06 mark 116 sot
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBTA06
PZTA06
OT-23
OT-223
MPSA06
MPSA06 fairchild transistor
PZTA06 SOT-223
LA 3843
CBVK741B019
F63TNR
MMBTA06
PN2222N
PZTA06
mark 116 sot
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MPSA56
Abstract: BEL 188 pnp TRANSISTOR characteristics CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Text: MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25°C unless otherwise specified. Parameter
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MPSA56/MMBTA56/PZTA56
300mA.
MPSA56/MMBTA56/PZTA56
MPSA56
BEL 188 pnp TRANSISTOR characteristics
CBVK741B019
F63TNR
MMBTA56
PN2222N
PZTA56
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bel 187 transistor
Abstract: PNP 2n3906 331 of bel 187 transistor TRANSISTOR BEL 187 BEL 187 transistor current gain configuration bel 187 transistor 728p 2N3906 SOT23 rc25 F63TNR
Text: MMBT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBT3906
PZT3906
OT-23
OT-223
bel 187 transistor
PNP 2n3906 331
of bel 187 transistor
TRANSISTOR BEL 187
BEL 187 transistor current gain
configuration bel 187 transistor
728p
2N3906
SOT23 rc25
F63TNR
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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