Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
|
Original
|
P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product – Specification 1st April 2003 ISSUE 6 TYPE HVR SERIES High Value / Voltage Resistors TYPE HVR SERIES KEY FEATURES Tyco offers a range of high power, high voltage resistors capable of operating up to 125KV and dissipating 50 watts in air or 100 watts in oil. Resistors are covered
|
Original
|
125KV
|
PDF
|
Astec Semiconductor
Abstract: APC08 APC08F03 APC08G03 APC08J03 APC08K03 APC08M03 APC08Y03
Text: Astec Industry Standard W9959_02_DCDC_001-073_73 2/8/02 3:09 PM Page 6 25 Watts APC08 Total Power: Input Voltages: No. of Outputs: 25 Watts 1.8 to 13 V Single High Efficiency PRELIMINARY Electrical Specs Input Input range Input Surge Efficiency 1.8-6.0VDC and 5.0-13.0VDC
|
Original
|
APC08
Astec Semiconductor
APC08
APC08F03
APC08G03
APC08J03
APC08K03
APC08M03
APC08Y03
|
PDF
|
LDO06C-005W05-SJ
Abstract: LDO06C LDO06C-005W05-HJ LDO06C-005W05-VJ
Text: Embedded Power for Business-Critical Continuity SXX06E Rev. 08.01.06 Page 1 of 2 Rev. 09.03.08 LDO06C 1 of 4 LDO06C Series 30 Watts Total Power: 30 Watts Input Voltage: 3-13.8 Vdc No. of Outputs: Single Electrical Specifications Output Special Features • 6 A output current rating
|
Original
|
SXX06E
LDO06C
LDO06C
LDO06C-005W05-SJ
LDO06C-005W05-HJ
LDO06C-005W05-VJ
|
PDF
|
capacitor 10kpf
Abstract: Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification SR703 BN-43-202
Text: 17 TB-113 RF TEST DATA RECORD TEST SPECIFICATION - SR703 AMP REVISED VDS - 28 V UNIT # Fq MHz 1 2 3 4 5 6 7 8 9 10 11 100 110 120 130 140 150 160 170 180 190 200 IDQ - 4.0 A Pin (WATTS) INPUT RT LOSS (DB) Pout (WATTS) OPERATOR - KM ID (AMPS) -17 -19 -21
|
Original
|
TB-113
SR703
082uF
10KpF
10MFD
capacitor 10kpf
Ft50-43
balun transformer 50ohm
BN43-202
bn43202
10KPF
103M capacitor
TOROIDAL transformer specification
BN-43-202
|
PDF
|
LC01-6.TDT
Abstract: LC01-6 MS-013 SRDA05-4 SO16w SEMTECH code date MARKING
Text: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features 1500 watts peak pulse power tp = 10/1000µs Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to
|
Original
|
LC01-6
5/50ns)
LC01-6
LC01-6.TDT
MS-013
SRDA05-4
SO16w
SEMTECH code date MARKING
|
PDF
|
1000US
Abstract: LC01-6 SRDA05-4
Text: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features u 1500 watts peak pulse power tp = 10/1000µs u Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to
|
Original
|
LC01-6
LC01-6
SO-16W
1000US
SRDA05-4
|
PDF
|
LC01-6
Abstract: LC01-6TD MS-013 SRDA05-4
Text: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features 1500 watts peak pulse power tp = 10/1000µs Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to
|
Original
|
LC01-6
5/50ns)
LC01-6
1000/Reel
46/Tube
LC01-6TD
MS-013
SRDA05-4
|
PDF
|
schematic diagram lightning protection
Abstract: crowbar TVS Diode cross Thyristor pulse transformer LC01-6 SRDA05-4 SO-16W P200-A
Text: LC01-6 Low Capacitance TVS for High-Speed Telecommunication Systems PROTECTION PRODUCTS Description Features 1500 watts peak pulse power tp = 10/1000µs Transient protection for high speed data lines to The LC01-6 transient voltage suppressor is designed to
|
Original
|
LC01-6
5/50ns)
LC01-6
tra2004
SO-16W
schematic diagram lightning protection
crowbar
TVS Diode cross
Thyristor pulse transformer
SRDA05-4
SO-16W
P200-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UWR Models www.murata-ps.com Single Output, High-Density, 6 Amp/15 Watt DC/DC Converters Typical units PRODUCT OVERVIEW PR FEATURES 1.2-2.5VOUT models source 6 Amps 3.3VOUT models source 4.25 Amps 5/12/15VOUT models deliver full 15 Watts
|
Original
|
Amp/15
5/12/15VOUT
0-18V,
8-36V,
6-75V
1500Vdc)
UL/IE/EN60950-1
75VIN
|
PDF
|
G200
Abstract: PTF10111
Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization
|
Original
|
1-877-GOLDMOS
1522-PTF
G200
PTF10111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA8025 series new 2/6/03 3:58 pm Page 1 Fusible Metal Film Resistors Welwyn Components FA8025 series • Predictable fusing characteristics • Flameproof protection Electrical Data FA8225 FA8325 FA8425 Power rating at 70°C watts 0.25 0.5 1.5 Resistance range
|
Original
|
FA8025
FA8225
FA8325
FA8425
FA8425
FA82/FA83
|
PDF
|
transorb 20v
Abstract: No abstract text available
Text: UWR Models www.murata-ps.com Single Output, High-Density, 6 Amp/15 Watt DC/DC Converters Typical units PRODUCT OVERVIEW PR FEATURES 1.2-2.5VOUT models source 6 Amps 3.3VOUT models source 4.25 Amps 5/12/15VOUT models deliver full 15 Watts
|
Original
|
Amp/15
Model48-1151
transorb 20v
|
PDF
|
ATC 1084
Abstract: pte10011
Text: ERICSSON $ PTE 10011* 6 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
IEC-68-2-54
Std-002-A
Po200
P4917-ND
P5276
G-200
ATC 1084
pte10011
|
PDF
|
|
|
transistor 0882
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10111* 6 Watts, to 1.5 GHz LDMOS Field Effect Transistor Description The 10111 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1,5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
P5276
G-200
transistor 0882
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TERMINATIONS AND RESISTORS HIGH POWER RESISTORS 0 .2 5 MAX 6 ,4 m m Maximum Power: Frequency Range: Maximum VSWR: 0 .1 2 5 (3,1 8 m m ) Flange: Contact: TERMINATIONS AND RESISTORS MODEL 5665 400 watts average, 4,000 watts peak DC -1 GHz 1.25 D C -4 0 0 MHz
|
OCR Scan
|
|
PDF
|
re 10019
Abstract: 10019
Text: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum
|
OCR Scan
|
P5276
P4917-ND
ber1997
re 10019
10019
|
PDF
|
PTE10026
Abstract: No abstract text available
Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
Tota20/97
5801-PC
P4917-ND
P5276
5701-PC
PTE10026
|
PDF
|
Transistor AC 51 0865 75 834
Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
Text: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
|
OCR Scan
|
P4917-ND
P5276
GI-200
Transistor AC 51 0865 75 834
ATC 1084
fe 5571
AC 51 0865
Transistor AC 51 0865 75 730
ic atc 1084
PTE 10011 Ericsson
|
PDF
|
transistor c1213
Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet
Text: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output
|
OCR Scan
|
|
PDF
|
IEC 62 code
Abstract: No abstract text available
Text: ^ Welwyn General Purpose Cement Coated WA80 series WA82 WA83 WA835 WA84 WA85 WA87 Power rating at 25°C watts 1 2.0 2.5 3.0 5 7 Power rating at 70°C watts .86 1.6 2.5 4.3 6 Resistance range ohms 0.068 to 430 0.05 to 900 2.0 0.05 to 900 0.01 to 2K2 0.1 to 4K5
|
OCR Scan
|
WA835
WA835
IEC 62 code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: pouier-nne DFA20 SERIES DESCRIPTION FEATURES T h e com pact, dual output D F A 20 series provides power densities • Remote ON/OFF and TRIM up to 11 watts per cubic inch 0 ,6 7 watts per cm ^ . Ideal for b a t' • Water Washable Case • Overcurrent Protection and Thermal Shutdown
|
OCR Scan
|
DFA20
700Volt
1544Volt
Ext30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors
|
OCR Scan
|
PH2323-6
513MM)
5b422D5
00013D3
|
PDF
|
ge 925
Abstract: atc 17-25
Text: E R IC SSO N í PTE 10020* 120 Watts, 9 2 5 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10020 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 925 to 960 MHz. It is rated at 120 watts minimum
|
OCR Scan
|
|
PDF
|
