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    5TH CLASS 2012 Search Results

    5TH CLASS 2012 Result Highlights (2)

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    LTC1062CSW#TRPBF Analog Devices 5th Order Lpass Filt Visit Analog Devices Buy
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    5TH CLASS 2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPS APC RS 1500 VA service manual

    Abstract: apc ups transformer 65kAIC apc ups rt 2000 SERVICE MANUAL Digital Panel Meter PM 435 DSP BASED ONLINE UPS design
    Text: Uninterruptible Power Supplies Section 20 Power dependency has increased dramatically in the new business environment based on e-commerce applications, mobile networks, corporate Internet sites, e-pay and networked IT structures. Near one-hundred percent system availability is


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability


    Original     		PDF IRG7RA13UPbF IGBJESD47F JSTD020D

    Untitled

    Abstract: No abstract text available
    Text: ACE User Guide For ACE Version 5.0 UG001 v5.0 - 5th December 2012 http://www.achronix.com Copyright Info Copyright 2006 - 2012 Achronix Semiconductor Corporation; certain portions of this guide are Copyright © 2000, 2006 IBM Corporation and others. All rights reserved. Achronix and Speedster are trademarks of


    Original     		PDF UG001

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    D260-4118-0000

    Abstract: 0119A 0190A
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLAU432 – February 2012 DAC348x EVM 1 2 3 4 5 Contents Introduction . 2 1.1 Overview . 2


    Original     		PDF SLAU432 DAC348x

    Untitled

    Abstract: No abstract text available
    Text: A.V Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC FEATURES • AEC-Q200 qualified with PPAP available • High reliability MLCC insert with wet build


    Original     		PDF AEC-Q200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DETUNING REACTOR

    Abstract: No abstract text available
    Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M400 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the


    Original     		PDF B44066D5075M400 B44066D DETUNING REACTOR

    Untitled

    Abstract: No abstract text available
    Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the


    Original     		PDF B44066D5075M440 B44066D

    Untitled

    Abstract: No abstract text available
    Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the


    Original     		PDF B44066D1499M440 B44066D

    Untitled

    Abstract: No abstract text available
    Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the


    Original     		PDF B44066D1499M440 B44066D

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    M27500-16RC1509

    Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100H M27500-16RC1509 ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 25cale

    Untitled

    Abstract: No abstract text available
    Text: A Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC FEATURES • • • • High capacitance with small size High reliability Axial mounting style


    Original     		PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DuroSite LED High Bay - UL for Indoor and Outdoor Industrial Applications Patent Pending DuroSite® LED High Bay Features & Benefits • 10 year full performance warranty available on specific models • 5 year full performance warranty standard • L70 rated for >100,000


    Original     		PDF 104lm/W Catalogs/Illumination/MDEXHBX001 MDEXHBX001

    bd139 equivalent

    Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
    Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION


    Original     		PDF BLV861 AN98033 BLV861 SCA57 bd139 equivalent BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 linear handbook MGM734 860mhz rf amplifier circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: JESD204B PHY Layer Compliance Test Rev. 1 — 31 May 2012 White paper Document information Info Content Author s Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Scott Ferguson – Field Digital Specialist, Agilent Technologies; Joe Evangelista – Field Applications Engineer, Agilent


    Original     		PDF JESD204B JESD204B

    Untitled

    Abstract: No abstract text available
    Text: Trusted Smart Life Solutions Electronic Driving Licenses Application Introduction Q1 - 2013 Introduction to National ID • Governments introduce electronic drivers licenses to – Reduce document fraud & identity theft – Securely and simply identify drivers


    Original     		PDF 2006/126/EC

    ATC600 capacitor

    Abstract: MRF7S21170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 ATC600 capacitor MRF7S21170HS

    "MARKING CODE BR"

    Abstract: No abstract text available
    Text: PJSD05MLFN2 ESD PROTECTION DIODES The PJSD05MLFN2 is designed to protect voltage sensitive components from ESD. Excellent clamping capability,low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. VOLTAGE POWER


    Original     		PDF PJSD05MLFN2 PJSD05MLFN2 2002/95/EC IEC61249 IEC61000-4-2 IEC61000-4-4 5/50ns) MIL-STD-750, 2010-REV "MARKING CODE BR"

    0119A

    Abstract: IC/0119A IC/IC/0119A
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 0119A IC/0119A IC/IC/0119A