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ABB Low Voltage Products and Systems 5SGA 20H2501 Thyristor: hockey-puck; 2.5kV; Ifmax: 1.3kA; 830A; Igt: 2.5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SGA 20H2501				1	1 $1912.12 10 $1548.4 100 $1548.4 1000 $1548.4 10000 $1548.4	Get Quote
Hitachi Energy 5SGA20H2501 GTO THYRISTOR
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Richardson RFPD	5SGA20H2501				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

5SGA 20H2501 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
5SGA 20H2501		ABB Semiconductors	Thyristor, GTO, 2500V Forward Blocking Voltage, 830A On-State Current, 50A Holding Current, 2200A RMS Current		Original	PDF
5SGA20H2501		ABB Semiconductors	Gate turn-off Thyristor		Original	PDF

5SGA 20H2501 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
gto 5sga Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	20H2501 CH-5600 gto 5sga GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501	PDF
GTO Snubber Capacitor Abstract: No abstract text available Text: Key Parameters VDRM = 2500 ITGQM = 2000 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	20H2501 CH-5600 GTO Snubber Capacitor	PDF
20H2501 Abstract: 5sga20h2501 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode	Original	20H2501 5SYA1205-01 CH-5600 20H2501 5sga20h2501	PDF
SG600EX21 Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18 Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01	Original	DS5549 DS5549-1 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 SG600EX21 SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18	PDF
Gate Turn-off Thyristor Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18 Text: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01	Original	DS5549-2 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 3001-25A01 Gate Turn-off Thyristor SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18	PDF
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031	PDF
05D2500 Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.	OCR Scan	15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV	PDF
ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502	PDF