marking MF
Abstract: No abstract text available
Text: Product catalogue | Installation Products | Markings | Terminal markers | MultiCard | Multifit | Blank General ordering data Order No. Part designation Version EAN Qty. 1816280000 MF-W 9/5F MC NEUTRAL Connector markers, L x W: 9 x 5 mm, Polyamide 66, white
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F
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2002/95/EC)
2SK3546G
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2SK3546G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name
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2002/95/EC)
2SK3546G
2SK3546G
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CT0402CSF
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones,
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CT0402CSF
HP4287A
CT0402CSF-R10_
CT0402CSF-R12_
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8N7 marking
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones,
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CT0402CSF
CT0402CS-3N6_
HP4287A
8N7 marking
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain
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2002/95/EC)
2SK3547G
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2SK3547G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain
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Original
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PDF
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2002/95/EC)
2SK3547G
2SK3547G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name
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Original
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PDF
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2002/95/EC)
2SK3546G
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CT0402CSF
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones,
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CT0402CSF
CT0402CS-3N6_
HP4287A
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Untitled
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones,
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CT0402CSF
CT0402CS-2N0_
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te
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2002/95/EC)
2SK3547G
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CT1008CSF
Abstract: No abstract text available
Text: SMD Wire-wound Chip Inductors CT1008CSF Series From 3.9 nH to 10000 nH ENGINEERING KIT #5F Not Shown at Actual Size CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor. Applications: LC resonant circuits such as oscillator and signal
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CT1008CSF
CT1008CSF-330_
CT1008CSF-030_
CT1008CSF-040_
CT1008CSF-080_
CT1008CSF-100_
CT1008CSF-120_
CT1008CSF-150_
CT1008CSF-180_
CT1008CSF-220_
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2SK3539G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y
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2002/95/EC)
2SK3539G
2SK3539G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na
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2002/95/EC)
2SK3539G
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Untitled
Abstract: No abstract text available
Text: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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CT0805CSF
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0805CSF Series SPECIFICATIONS Please specify tolerance code when ordering. CT0805CSF-120_ G = ±2%, J = ±5%, K = ±10%, M = ±20% * = K or M only * = J, K or M only From 2.2 nH to 2700 nH Part Number ENGINEERING KIT #5F
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CT0805CSF
CT0805CSF-120_
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Untitled
Abstract: No abstract text available
Text: Amphenol Amphenol East Asia Ltd. 5F., No. 361, Fusing 1st Road, Gueishan Township Taoyuan County, 33375 Taiwan Tel: 886-3-264-7200 Fax: 886-3-327-5196 SPECIFICATION FOR APPROVAL Customer: ACC Description: D-SUB CONNECTOR STRAIGHT PCB MOUNT RECEPTACLE No. Amphenol Part No.
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G17T0902121CEU
GS-17TEU
UL94V-O
QQ-B-750
NE-05266
NE-01712
NE-00416
NE-99260
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1n0K
Abstract: No abstract text available
Text: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not Shown at Actual Size CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor. Applications: Telecommunication equipment, mobile phones, small size pagers, computers, printers and relevant equipment.
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CT0402CSF
CT0402CS-3N6_
CT0402CSF-1N0K
CT0402CSF-1N9K
CT0402CSF-2N0K
CT0402CSF-2N2K
CT0402CSF-2N4K
CT0402CSF-2N7K
CT0402CSF-3N3_
CT0402CSF-3N6_
1n0K
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Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 5F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING XTAL 5.0*3.2
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768000MHz
7B32700038
MIL-STD-202F
MIL-STD-883E
1000Hrs
C5023
RH100%
240Hrs
C6701
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Untitled
Abstract: No abstract text available
Text: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads
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Original
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PDF
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads
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Original
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SV24B
Abstract: snap-off diode diode 5f ND1243-5F ND1242-5F SV24A
Text: L . uh*. NE C/ CALIFORNIA 1SE D SEC • b427m4 0001=132 ? T ‘ Ô7~U ND1242-5F ND1243-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Unitsfn mm OUTLINE 5F • LOW CO N VERSIO N LO S S • HIGH M ULTIPLICATIO N RATIO • U LTRA SH O R T R E V E R S E TURN ON TIM E
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a427Mm
GD0n32
ND1242-5F
ND1243-5F
ND1242
ND1243
b4E7414
ND1242-5F,
SV24B
snap-off diode
diode 5f
ND1243-5F
SV24A
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1S1855
Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
Text: NE C/ 1SE D CALIFORNIA NEC b4S7414 0001*134 T 'O l - i £ ND1551-7F ND1561-5F ND1571-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Units in mm • U LTR A S H O R T R EV ER S E TU R N O N T IM E OUTLINE 5F • H IG H R E L IA B IL IT Y • LO W C O S T
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OCR Scan
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PDF
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b427414
ND1551-7F
ND1561-5F
ND1571-5F
ND1551
ND1571-5F
ND1551-7F,
ND1561-5F,
1S1855
NEC 1s1855
1S1857
1S1856
snap-off diode
diode 5f
DIODE E 7F
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Untitled
Abstract: No abstract text available
Text: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48
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BC807
BC808
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
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