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    200B

    Abstract: 59C11
    Text: 59C11 1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles • Automatic erase before WRITE


    Original     		PDF 59C11 DS20040I-page 200B 59C11

    59c11

    Abstract: 200B
    Text: 59C11 1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS CS 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS SOIC 59C11 DESCRIPTION The Microchip Technology Inc. 59C11 is a 1K bit Electrically Erasable PROM. The device is configured as


    Original     		PDF 59C11 DS20040J-page 59c11 200B

    Untitled

    Abstract: No abstract text available
    Text: M 59C11 ic r o c h i p IK 5V CMOS Serial EEPROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 59C11 DS20040G-page 59C11T

    BSY76

    Abstract: No abstract text available
    Text: & 59C11 Microchip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 59C11 DS20040F-page MCHPD001 59C11T BSY76

    Untitled

    Abstract: No abstract text available
    Text: & 59C11 M icrochip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 59C11 128x8 DS20040F-page 59C11T

    59C11

    Abstract: No abstract text available
    Text: M i c r o c h 59C11 i p IK 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology PACKAGETYPE DIP • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization cs C 1 8 I] Vcc • Single 5 volt only operation • Self timed W R ITE, ERAL and W RAL cycles


    OCR Scan     		PDF 59C11 128x8 64x16 DS20040H-page

    X16-AN

    Abstract: No abstract text available
    Text: 59C11 M ic r o c h ip IK 5.0V CMOS Serial EEPROM FEATURES • Low power C M OS technology PACKAGETYPE DIP • Pin selectable m em ory organization - 128 x 8 or 64 x 16 bit organization cs C 1 • Single 5 volt only operation 2 T- 7 D lC 3 O “> 6 □ ORG


    OCR Scan     		PDF 59C11 DS20040H-page X16-AN

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 59C11 IK 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE DIP • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation cs C 1 • Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 DS20040H-page bl03201

    Untitled

    Abstract: No abstract text available
    Text: 59C11 M ic r o c h ip IK 5.0V CMOS Serial EEPROM FEATURES PACKAGE TYPE • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles • Automatic erase before WRITE


    OCR Scan     		PDF 59C11 DS20040l-page

    59C11

    Abstract: No abstract text available
    Text: M 59C11 ic r o c h ip IK 5.0V Microwire Serial EEPROM FEATURES PACKAGETYPES • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5V only operation • Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 bl032Dl ia713 DS20040J-page 59C11T

    B10320

    Abstract: 128X8 59C11
    Text: M 59C11 ic r o c h ip IK 5.0V Microwire Serial EEPROM FEATURES PACKAGETYPES • Low power CMOS technology DIP • Pin selectable m em ory organization - 128 x 8 or 64 x 16 bit organization • Single 5V only operation cs □ • Self tim ed W RITE, ERAL and W R AL cycles


    OCR Scan     		PDF 59C11 128x8 64x16 59C11 DS20040J-page 59C11T B10320

    Untitled

    Abstract: No abstract text available
    Text: & 59C11 M icrochip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization Single 5 volt only operation Self timed WRITE, ERAL and WRAL cycles


    OCR Scan     		PDF 59C11 59C11 DS20040E-7 59C11T DS20040E-8