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Abstract: 59C11
Text: 59C11 1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles • Automatic erase before WRITE
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59C11
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59C11
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59c11
Abstract: 200B
Text: 59C11 1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS CS 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS SOIC 59C11 DESCRIPTION The Microchip Technology Inc. 59C11 is a 1K bit Electrically Erasable PROM. The device is configured as
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59C11
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59c11
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Untitled
Abstract: No abstract text available
Text: M 59C11 ic r o c h i p IK 5V CMOS Serial EEPROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles
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59C11
59C11
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59C11T
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BSY76
Abstract: No abstract text available
Text: & 59C11 Microchip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles
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59C11
59C11
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MCHPD001
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Abstract: No abstract text available
Text: & 59C11 M icrochip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Low power CMOS technology • Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles
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59C11
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59C11T
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59C11
Abstract: No abstract text available
Text: M i c r o c h 59C11 i p IK 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology PACKAGETYPE DIP • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization cs C 1 8 I] Vcc • Single 5 volt only operation • Self timed W R ITE, ERAL and W RAL cycles
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59C11
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X16-AN
Abstract: No abstract text available
Text: 59C11 M ic r o c h ip IK 5.0V CMOS Serial EEPROM FEATURES • Low power C M OS technology PACKAGETYPE DIP • Pin selectable m em ory organization - 128 x 8 or 64 x 16 bit organization cs C 1 • Single 5 volt only operation 2 T- 7 D lC 3 O “> 6 □ ORG
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X16-AN
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip 59C11 IK 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE DIP • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation cs C 1 • Self timed WRITE, ERAL and WRAL cycles
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bl03201
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Untitled
Abstract: No abstract text available
Text: 59C11 M ic r o c h ip IK 5.0V CMOS Serial EEPROM FEATURES PACKAGE TYPE • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5 volt only operation • Self timed WRITE, ERAL and WRAL cycles • Automatic erase before WRITE
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59C11
DS20040l-page
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59C11
Abstract: No abstract text available
Text: M 59C11 ic r o c h ip IK 5.0V Microwire Serial EEPROM FEATURES PACKAGETYPES • Low power CMOS technology • Pin selectable memory organization - 128 x 8 or 64 x 16 bit organization • Single 5V only operation • Self timed WRITE, ERAL and WRAL cycles
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bl032Dl
ia713
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B10320
Abstract: 128X8 59C11
Text: M 59C11 ic r o c h ip IK 5.0V Microwire Serial EEPROM FEATURES PACKAGETYPES • Low power CMOS technology DIP • Pin selectable m em ory organization - 128 x 8 or 64 x 16 bit organization • Single 5V only operation cs □ • Self tim ed W RITE, ERAL and W R AL cycles
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59C11
128x8
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59C11
DS20040J-page
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Untitled
Abstract: No abstract text available
Text: & 59C11 M icrochip IK 128 x 8 or 64 x 16 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology Pin selectable memory organization — 128 x 8 or 64 x 16 bit organization Single 5 volt only operation Self timed WRITE, ERAL and WRAL cycles
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59C11
59C11
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