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    593 SOT23 Search Results

    593 SOT23 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    593 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT593 TRANSISTOR PNP SOT–23 FEATURES  Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-23 FMMT593 FMMT493 -250mA -250mA, -25mA -500mA, -50mA

    FMMT593

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3- NOVEMBER 1995 I I I COMPLEMENTARY TYPE FM MT493 PARTMARKING DETAIL -593 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Emitter-Base ——— Peak Pulse ‘C Voltage –-— v EBO ‘5 ICM


    Original     		PDF FMMT593 MT493 -50mA, 100MHz 100MA FMMT593

    FMMT493

    Abstract: FMMT593 DSA003699
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V


    Original     		PDF FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA, FMMT493 FMMT593 DSA003699

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V


    Original     		PDF FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA,

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT593 ✪ COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 E C B * +25 ° C I /I =10 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C + * I+/I*=50 I /I =10 +-=5V + * V I /I =10


    Original     		PDF FMMT593 FMMT493 100mA 100ms

    CMMT593

    Abstract: marking code 51 SMD Transistor TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE WT CMMT493 MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 transistor smd marking NA sot-23 smd transistor TN
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMMT593 PIN CONFIGURATION PNP SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =593 Complementary CMMT493


    Original     		PDF CMMT593 OT-23 CMMT493 C-120 CMMT593Rev260205E CMMT593 marking code 51 SMD Transistor TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE WT CMMT493 MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 transistor smd marking NA sot-23 smd transistor TN

    MMBT593

    Abstract: No abstract text available
    Text: MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A Collector 3 Medium Power Transistor L 3 3 C B Top View 1 MARKING 1 1 Base K 2 E 2 2 593 D Emitter


    Original     		PDF MMBT593 OT-23 -10mA, -100A, -100V, 250mA, 500mA, MMBT593

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202s, DS33106

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT593 100V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A Excellent hFE Characteristics up to IC = -1A


    Original     		PDF FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202, DS33106

    TRANSISTOR SMD PNP 1A

    Abstract: NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23
    Text: Transistors SMD Type High Voltage Transistor FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF FMMT593 OT-23 -250mA, -25mA -500mA, -50mA -250mA TRANSISTOR SMD PNP 1A NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF FMMT593 OT-23 -250mA, -25mA -500mA, -50mA -250mA

    FMMT593

    Abstract: 593 SOT23
    Text: FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon P b Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage


    Original     		PDF FMMT593 OT-23 FMMT593 -50mA, 100MHz 06-May-10 OT-23 593 SOT23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Pin Configuration PNP Plastic-Encapsulate Transistor Top View Power dissipation: PCM=0.25W Tamb=25ć


    Original     		PDF FMMT593 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 • NOVEMBER 1995_Q C O M PLEM EN TA RY TYPE FM M T493 P A R T M A R K IN G D E T A IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge V ALUE


    OCR Scan     		PDF FMMT593

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O C O M P L E M E N T A R Y TY PE F M M T 4 9 3 P A R T M A R K IN G DETA IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF FMMT593 100mA

    JD 16

    Abstract: ecg rectifier diode ECG605 1N415C diode 1N415C Z41A K596 595-AA 1N416E diode ecg 125
    Text: PHILIPS E C INC G S4E » • IECG bfe5312fl 00D7E05 244 Diode and Rectifier Outlines cont'd 610 611 612 613 614 L . .3 6 0 " _ J9.I4) .t9? .200 (5 ) ( 5 .0 8 ) .18 < 4.6 ) DIA .IB S ( 4 TO ) n COMMON CATHOOC 7 .787 ■M «H ! L _ .4 2 5 "_J .110' k - f K


    OCR Scan     		PDF 0007E05 ECG605 ECG113A ECG120 ECG582 ECG581 O-220 1N415C 1N415E 1N416C JD 16 ecg rectifier diode ECG605 1N415C diode Z41A K596 595-AA 1N416E diode ecg 125

    ecg rectifier diode

    Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
    Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060


    OCR Scan     		PDF 1N415C 1N415E 1N416C 1N416E ECG553 ECG566A ECG571 ECG616A Z13-2 DO-92 ecg rectifier diode ECG 558 ECG diodes diode ecg 588 ECG555A 110MP

    VARISTOR 593

    Abstract: 223 Varistor RY 228 Varistor 271 592 varistor BLF 377 RY 227 VARISTOR 593 275 VARISTOR 338 VARISTOR PTC
    Text: [• - - r Numerical Index NUMERICAL INDEX OF CATALOG NUMBERS CATALOG NUMBER PAGE NUMBER 100 000 S e r ie s .353-354 101 000 Series . 352


    OCR Scan     		PDF SP721 SP723 SP724 VARISTOR 593 223 Varistor RY 228 Varistor 271 592 varistor BLF 377 RY 227 VARISTOR 593 275 VARISTOR 338 VARISTOR PTC

    motorola diode device data

    Abstract: IV01TS
    Text: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio


    OCR Scan     		PDF MMBV809LT1* OT-23 O-236AB) IV01TS) MMBV809LT1 motorola diode device data IV01TS

    diode ECG125

    Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
    Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time


    OCR Scan     		PDF bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky

    6206 voltage regulator

    Abstract: D0127 ultra low drop, high current diode Schottky Barrier 3A 12 pulse diode rectifier Common Anode dual Schottky Rectifier
    Text: RECTIFIERS G E N E H A L PURPOSE NTE Type No. Material 584 Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) V Description and Application


    OCR Scan     		PDF 200MHZ T0220 T0218 6206 voltage regulator D0127 ultra low drop, high current diode Schottky Barrier 3A 12 pulse diode rectifier Common Anode dual Schottky Rectifier

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF G7323 MPS6513 625mW 2N3904

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF D0S4704 BF821 BF823 BF820, BF822