st 2n 3906
Abstract: 2n390 2N390S 2N3906 2N3905 MOTOROLA 2N3906-O 3906 2n 2N3906TF 2N3905 3906
Text: M A XIM U M RATINGS Symbol Value Unit C o lle c to r -E m itte r V o lta g e VCEO 40 Vdc C o lle c to r-B a s e V o lta g e VCBO 40 V dc E m itte r-B a s e V o lta g e Vebo 5.0 Vdc 'c 200 m Adc Pd 625 mW m W /°C Rating C o lle c to r C u rre n t - C o n tin u o u s
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2N3905
2N3906
st 2n 3906
2n390
2N390S
2N3906
2N3905 MOTOROLA
2N3906-O
3906 2n
2N3906TF
3906
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UFNF230
Abstract: F-431
Text: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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i347clb3
UFNF430
UFNF431
UFNF432
UFNF433
UFNF320
UFNF321
UFNF322
UFNF323
UFNF230
F-431
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2N6761
Abstract: 2N6762 2N6767 2nc762
Text: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi
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T-39-11
2N6761,
2N6762
2N6761
2N6762
3fi75Dfll
2N6767
2nc762
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motorola diode device data
Abstract: IV01TS
Text: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio
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MMBV809LT1*
OT-23
O-236AB)
IV01TS)
MMBV809LT1
motorola diode device data
IV01TS
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15n50
Abstract: MTM15N35 SN45 2657 mosFET 15n45 MTM15N50 SN45 diode MTM15N45 AN569 0165R
Text: MOTOROLA SC X S T R S /R MOTOROLA m e F D I b3b?as4 o m a a a o a | _ m SEMICONDUCTOR TECHNICAL DATA M TM 15N45 MTM15IM50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S B TM O S POW ER FETs
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15N45
15N50
Y145M,
97A-02
O-204AE
15n50
MTM15N35
SN45
2657 mosFET
MTM15N50
SN45 diode
MTM15N45
AN569
0165R
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2N6782
Abstract: c0366 diode sv 0367
Text: □1 E SOLID STATE DE I 3 fi7 S □ fl1 Q01Û 4DÔ fi f - — - Z aianaarcfl'ower M O S F E T s 2N6782 File Number 1592 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E
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2N6782
2N6782
1A41E
c0366
diode sv 0367
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Untitled
Abstract: No abstract text available
Text: M CR218FP Silicon Controlled Rectifiers Series Reverse Blocking Thyristors . . . d e sig ned p rim a rily fo r ha lf-w ave ac c o n tro l ap plication s, such as m o to r con trols, heating c o n tro ls and p o w e r s u p p ly cro w b a r circuits. ISOLATED SCRs
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CR218FP
221C-02
MCR218FP
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