EM614081-70
Abstract: EM614081TS-70 SOJ-28
Text: EtronTech EM614081 512K x 8 Fast Page Mode DRAM Preliminary 9/97 Features • 524,288 word by 8 bit organization • Fast access time: 70ns • Single power supply of 5V¡Ó10% • Fast Page Mode Operation • Low Power • • • - 578mW MAX. Operating
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EM614081
578mW
cycles/16ms
EM614081-70
EM614081TS-70
SOJ-28)
81MAX
EM614081-70
EM614081TS-70
SOJ-28
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dap 002 so-16
Abstract: LM7372 LM7372ILD LM7372ILDX LM7372IMA LM7372IMAX LM7372MR LM7372MRX SOIC-16
Text: LM7372 High Speed, High Output Current, Dual Operational Amplifier General Description Features The LM7372 is a high speed dual voltage feedback amplifier that has the slewing characteristic of current feedback amplifiers; yet it can be used in all traditional voltage feedback
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LM7372
LM7372
120MHz,
150mA
dap 002 so-16
LM7372ILD
LM7372ILDX
LM7372IMA
LM7372IMAX
LM7372MR
LM7372MRX
SOIC-16
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Untitled
Abstract: No abstract text available
Text: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback
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LM7372
SNOS926E
LM7372
-80dBc
120MHz
200MHz
150mA
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Untitled
Abstract: No abstract text available
Text: LM7372 www.ti.com SNOS926D – MAY 2004 – REVISED JUNE 2008 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES • 1 • 23 • • • • • • −80dBc highest harmonic distortion @1MHz, 2VPP Very high slew rate: 3000V/µs
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LM7372
SNOS926D
LM7372
-80dBc
120MHz
200MHz
150mA
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Untitled
Abstract: No abstract text available
Text: PJDD514260ESL-01 作成 ：2001 年 1 月 1電子デバイス MSM514260E/ESL 暫定 262,144-Word x 16-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM514260E/ESL はCMOS プロセス技術を用いた 262,144 ワードx16 ビット構成のダイナミッ
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PJDD514260ESL-01
MSM514260E/ESL
144-Word
16-Bit
MSM514260E/ESL
SOJ44/40
8ms512
128msSL
400mil
SOJ40-P-400-1
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Untitled
Abstract: No abstract text available
Text: ADS5500 SBAS303C − DECEMBER 2003 − REVISED MARCH 2004 14ĆBit, 125MSPS AnalogĆtoĆDigital Converter D Recommended Amplifiers: FEATURES D 14-Bit Resolution D 125MSPS Sample Rate D High SNR: 70.5dBFS at 100MHz fIN D High SFDR: 82dBc at 100MHz fIN D 2.3VPP Differential Input Voltage
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ADS5500
SBAS303C
125MSPS
14-Bit
125MSPS
100MHz
82dBc
578mW
OPA695,
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Untitled
Abstract: No abstract text available
Text: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback
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LM7372
SNOS926E
LM7372
-80dBc
120MHz
200MHz
150mA
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PDF
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Untitled
Abstract: No abstract text available
Text: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback
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LM7372
SNOS926E
LM7372
80dBc
000V/Â
120MHz
200MHz
150mA
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PDF
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SOJ42
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0154-18-X1
MSM5116165D/DSL
MSM5116165D/DSL
576-Word
16-Bit
MSM5116165D/DSLCMOS1
42CMOS
42SOJ50/44TSOP
09664ms4
096128msSL
SOJ42
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toshiba 7 pin a215
Abstract: A227
Text: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514800AJL/AFTL70/80
TC514800AJL/AFTL
toshiba 7 pin a215
A227
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Untitled
Abstract: No abstract text available
Text: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
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TC514400JL/ZL
TC514400JL/ZL-80
TC514400JL/ZL--
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A302 w3
Abstract: aa z8b
Text: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s
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TC514410J/Z-80»
TC514410J/Z-10
TC514410J/Z
514410J/Z
TC514410J/Z-80,
TC514410J/M
A302 w3
aa z8b
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Untitled
Abstract: No abstract text available
Text: LM 7372 LM7372 High Speed, High Output Current, Dual Operational Amplifier T ex a s In s t r u m e n t s Literature Number: SNOS926D Semiconductor LM 7372 High Speed, High O u tp u t C urrent, Dual O perational A m p lifie r General Description Features The LM7372 is a high speed dual voltage feedback amplifier
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LM7372
SNOS926D
000V/S
120MHz,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MEMORY E lectron ic C om ponents B u sin ess S ecto r 1 ,0 4 8 ,5 7 6 WORD X 4 BIT DYNAMIC RAM T C 5 1 4 4 0 2 J/Z-80 T C 5 1 4 4 0 2 J/Z-10 DESCRIPTION The TC 5 1 4402J/Z is the n e w generation dynamic R A M organized 1,048,576 words b y 4 bits.
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J/Z-80
J/Z-10
4402J/Z
514402J/Z
TC514402J/Z
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Untitled
Abstract: No abstract text available
Text: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1
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TC514101J/Z
MST-W-0030
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 4 4 8 A J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 524288-w ord by 8 -b it dynamic RAMS, :abricated with the high performance CMOS process, and is
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4194304-BIT
524288-WORD
524288-w
M5M44800AJ
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A194 toshiba
Abstract: No abstract text available
Text: TOSHIBA TC514800AF/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514800AF/AZ/AFT-70/80
TC514800AJ/AZ/AFT
A194 toshiba
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TC514400
Abstract: TCWP
Text: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4
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TC514400J/Z
TC514400J/Z-80
TC514400J/Z--10
TC514400
TCWP
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TG5144
Abstract: TD514
Text: TOSHIBA MOS MEMORY PRODUCTS TC514402J/Z-80, TC514402J/Z-10 DESCRIPTION The T C 5 1 4 4 0 2 J / Z is the n e w g e n e r a t i o n dy n a m i c R A M o r g a n i z e d 1 , 048,576 w o r d s by 4 bits. The T C 5 1 4 4 0 2 J / Z u t i l i z e s T O S H I B A ' S C MOS S i l i c o n gate p r ocess t e c h n o l o g y as w e l l
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TC514402J/Z-80,
TC514402J/Z-10
TC514402J/Z-N0,
TD514402J/M
TC514402J
TG5144
TD514
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Untitled
Abstract: No abstract text available
Text: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256LL
256Kx
KM416C256LL
130ns
KM416C256LL-8
150ns
KM416C256LL-10
100ns
180ns
KM416C256LL-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its
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KM416C256/L/SL
DD1343Q
KM416C256/USL
130ns
KM416C256/USL-8
150ns
KM416C256/L/SL-10
KM416C256/USL-7
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s
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KM416C256LL
KM416C256LL
KM416C256LL-7
130ns
KM416C256LL-8
150ns
KM416C256LL-10
100ns
180ns
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M514170
Abstract: ZIP40-P-475
Text: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process
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MSM514170A/ASL
144-Word
16-Bit
MSM514170A/ASL
cycles/16ms,
M514170
ZIP40-P-475
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AM9130APC
Abstract: AM9130BPC AM9130CPC AM9130DPC AM9130EPC AM91L30BPC AM91L30CPC AM91L L30D Am9130/40
Text: Am9130 •Am91L30 1024 x 4 Static R/W Random Access Memories DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • The Am9130 and Am91L30 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 1024 words by 4 bits per
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Am9130
Am91L30
200ns
578mW
368mW
91L30
400mV
MPR-384
MPR-386
AM9130APC
AM9130BPC
AM9130CPC
AM9130DPC
AM9130EPC
AM91L30BPC
AM91L30CPC
AM91L
L30D
Am9130/40
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