DALE R1F resistor
Abstract: DALE R1F MAX1647 MBRS340T3 TPSE686M020R0150 35CV150GX IRF7303 MAX1648 MAX745 MAX745EVKIT
Text: MAX745 Evaluation Kit _Component Suppliers SUPPLIER* AVX Dale-Vishay International Rectifier IRC Motorola Sanyo Sumida PHONE FAX 803 946-0690 (402) 564-3131 (310) 322-3331 (512) 992-7900 (602) 303-5454 (619) 661-6835 (847) 956-0666 (803) 626-3123
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MAX745
300kHz
MAX745EVKIT
MAX745
DALE R1F resistor
DALE R1F
MAX1647
MBRS340T3
TPSE686M020R0150
35CV150GX
IRF7303
MAX1648
MAX745EVKIT
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Untitled
Abstract: No abstract text available
Text: Using the UCC28250EVM-564 User's Guide Literature Number: SLUU441A September 2010 – Revised October 2011 User's Guide SLUU441A – September 2010 – Revised October 2011 Half-Bridge DC-to-DC Converter With Secondary-Side Control 1 Introduction This EVM is to aid in evaluating UCC28250 PWM device with secondary-side control in DC-to-DC
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UCC28250EVM-564
SLUU441A
UCC28250
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rtd pt100 interface to 8051
Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515
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OPA340PA:
ADS7816P:
12-Bit
200KHz
OPA2337PA:
ADS7822P:
INA125UA:
OPA680U:
OPA547F:
rtd pt100 interface to 8051
24V 20A SIEMENS battery charger
LM2560
smd 58a transistor 6-pin
pic 16f84 PWM circuit
scr control light intensity using 8051
8051 microwave oven
design of FM transmitter final year project
project pic 16f84 pwm
"white led" 5mm
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4435 mosfet
Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展
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APM70N03
APM3005/7/9N
APM2509/6/4N
MO-23/25/26/89,
SC-70
0V/20V,
30mohm
/55mohm~
APM2300A/2322/2324,
APM2310/2320/2306,
4435 mosfet
APM2014
4410 mosfet
MOSFET 4420
4435* mos
4435 sc
MOSFET 4435
9935 mosfet
ANPEC
APM2310
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4001 4011 cmos
Abstract: 4049 DIP14 4013 datasheet hct lcx 574 CMOS 4541 str 4512 C3245 4017 14 pin package CMOS4000 hcf 4541 be
Text: Surface mounting packages Standard Logic ICs SO-8 SO-14 SO-16L SO-16 SO-20 SO-24 Selection guide TSSOP14 SOT23-8L TSSOP20 TSSOP16 SOT23-5L SOT323-5L Flip-Chip4 TSSOP48 TSSOP24 µFBGA42 Package TFBGA54 TFBGA96 H inch W (tape width mm) P (mm) D (mm) SO-8, TFBGA42
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SO-14
SO-16L
SO-16
SO-20
SO-24
TSSOP14
OT23-8L
TSSOP20
TSSOP16
OT23-5L
4001 4011 cmos
4049 DIP14
4013 datasheet hct
lcx 574
CMOS 4541
str 4512
C3245
4017 14 pin package
CMOS4000
hcf 4541 be
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DIODE D29 -08
Abstract: No abstract text available
Text: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23
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BSR302N
PG-SC-59
L6327
DIODE D29 -08
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BSR302N
Abstract: GPS09473 HLG09474 L6327 GS1660
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
L6327
BSR302N
GPS09473
HLG09474
L6327
GS1660
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GS1660
Abstract: BSR302N GPS09473 HLG09474 L6327
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
L6327
GS1660
BSR302N
GPS09473
HLG09474
L6327
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Untitled
Abstract: No abstract text available
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
PG-SC-59
L6327
JESD22-C101-HMB
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DIODE D29 -08
Abstract: No abstract text available
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
PG-SC-59
L6327
DIODE D29 -08
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HLG09474
Abstract: No abstract text available
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
L6327
HLG09474
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lcx 574
Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049
Text: Standard Logic ICs Selection guide August 2007 www.st.com/logic Family selector HCT 0 to VCC 4 12 4.5 to 5.5 0 to VCC 4 12 AC 2 to 6 0 to VCC 24 4 ACT 4.5 to 5.5 0 to VCC 24 4 VHC 2 to 5.5 0 to 5.5 8 4 VHCT 4.5 to 5.5 0 to 5.5 8 4 V1G 2 to 5.5 0 to 5.5 8 4
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DIP-14/16
DIP-14
DIP-24
SGSTDLOG0307
lcx 574
STR 4512
HC 4093
4001 4011 cmos
HC 40106
4017 14 pin package
4011 cmos logic gate
HC 4011 logic gate
hcf 4541 equivalent
hct 4049
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4541B
Abstract: 4098B 40106B 4034b hcf 4052 datasheet rs 4011b 4039B 4013B 4009UB logos 4012B
Text: LO 2.5V Vi Top Io Tpd VO With 3.6V Input/Output Tolerance SYMBOL Vcc W VCX VERY HIGH SPEED LOGIC PARAMETER VALUE UNIT 1.8 to 3.6 V Input Voltage 0 to 3.6 V Operating Temperature -40 to 85 °C 24 mA @ Vcc= 2.3V 18 mA @ Vcc= 1.8V 6 mA 3.2* ns Supply Voltage
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4000B
4030B,
4070B
4069UB,
4502B
4007UB,
4009UB,
4010B,
4041UB,
4077B
4541B
4098B
40106B
4034b
hcf 4052 datasheet
rs 4011b
4039B
4013B
4009UB
logos 4012B
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74 HC 273A
Abstract: hcf 4052 datasheet 4026B data sheet HC 40106 4039B 4027B 4093B 4013B 4081b DATAsheet 4022B
Text: 3.3V SYMBOL Vcc LCX WITH 5V INPUT/OUTPUT TOLERANCE PARAMETER VALUE UNIT 2.7 to 3.6 V Input Voltage 0 to 5.5 V SO Tube 74LCXxxxM Operating Temperature -40 to 85 °C SO (T&R) 74LCXxxxMTR 24 mA TSSOP (Tube) 74LCXxxxT* 4 (TYP)* ns TSSOP (T&R) 74LCXxxxTTR 74LCX16xxxTTR 74LCX16xxxATTR
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74LCXxxxM
74LCXxxxMTR
74LCXxxxT*
74LCXxxxTTR
74LCX16xxxTTR
74LCX16xxxATTR
74LCX16xxxT*
74LCX
74 HC 273A
hcf 4052 datasheet
4026B data sheet
HC 40106
4039B
4027B
4093B
4013B
4081b DATAsheet
4022B
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circuit diagram of 13.56MHz RF Generator
Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET
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DRF1200
DRF1200/Class-E
an6-13131-1-ND
DRF1200
140-XRL16V10-RC
GRM21BR71H474KA88L
140-XRL35V10-RC
circuit diagram of 13.56MHz RF Generator
schematic rf Power supply 500w
PRF-1150
schematic rf Power supply 500w 13.56MHz
1kw mosfet
GRM21BR71H474KA88L
13.56MHZ mosfet
zener diode c24 5t
RF inductor 13.56 MHz
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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KST4126
Abstract: marking E3
Text: KST4126 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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PDF
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KST4126
OT-23
-10HA,
-50mA,
100MHz
-100mA,
300//s,
00251ED
KST4126
marking E3
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 914 S ilico n V ariab le C a p a c ita n c e D iode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve
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OCR Scan
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Q62702-B673
OT-23
flS35b05
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Marking KJo SOT23
Abstract: 564 transistor MMBTA43 transistor 564 marking 564 sot23-6
Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 14E D | 7=11,4142 00072^4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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OCR Scan
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PDF
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MMBTA43
OT-23
100hA
100hA,
MMBTA43_
Marking KJo SOT23
564 transistor
transistor 564
marking 564 sot23-6
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Ferranti Semiconductors
Abstract: ferranti ZC830 ZC831 ZC832 ZC833 ZC834 ZC835 ZC836
Text: SOT-23 T A B LE 7 - S IL IC O N ION IM PLA N TED H Y P E R A B R U P T TU N E R D IO D ES Designed fo r use in H F, V H F , U H F e le ctro n ic tu n in g a p p lica tio n s w here large cap a cita n ce variatio n s and high Q are required. H igh Q w ith a guaranteed m inim um value.
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OT-23
C2/C20
ZC830
ZC831
ZC832
ZC833
ZC834
ZC835
FSD1001.
FSD1001
Ferranti Semiconductors
ferranti
ZC836
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBTA43
OT-23
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Untitled
Abstract: No abstract text available
Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to
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OT-23)
SST6839
BC857B
BC858B
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