ADVANCED POWER TECHNOLOGY
Abstract: L-Band 1200-1400 MHz
Text: 1214-32LR2 1214-32L 32 Watts, 36 Volts Pulsed Radar at 1.2-1.4 GHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The 1214-32L is an internally matched, COMMON BASE transistor capable of providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,
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1214-32LR2
1214-32L
1214-32L
55AW-1
ADVANCED POWER TECHNOLOGY
L-Band 1200-1400 MHz
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2124-12L
Abstract: No abstract text available
Text: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes
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2124-12L
2124-12L
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MDS60L
Abstract: MDS60 1090mhz 1030MHz-1090MHz
Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.
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MDS60L
MDS60L
56653X)
1030MHz
1090MHz
MDS60
1090mhz
1030MHz-1090MHz
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Untitled
Abstract: No abstract text available
Text: R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device
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DME375A
DME375A
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microwave amplifier 2.4 ghz 10 watts
Abstract: 2223 2223-9A transistor Common Base amplifier
Text: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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223-9A
160mA
microwave amplifier 2.4 ghz 10 watts
2223
2223-9A
transistor Common Base amplifier
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2124-12L
Abstract: No abstract text available
Text: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes
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2124-12L
2124-12L
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1517-110M
Abstract: W148
Text: 1517-110M 110 Watts, 40 Volts, 200µs, 10% Radar 1480 to 1650 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The 1517-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically
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1517-110M
55AW-1
1517-110M
Cur08
W148
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JTDB75
Abstract: No abstract text available
Text: JTDB75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, Style 1 The JTDB75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest
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JTDB75
JTDB75
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MDS150
Abstract: max15020 6020V
Text: MDS150 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS150 is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has
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MDS150
MDS150
max15020
6020V
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Untitled
Abstract: No abstract text available
Text: JTDB25 25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz CASE OUTLINE 55AW-1 GENERAL DESCRIPTION The JTDB25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest
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JTDB25
55AW-1
JTDB25
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DME375A
Abstract: No abstract text available
Text: R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device
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DME375A
DME375A
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RT5870
Abstract: L-Band 1200-1400 MHz BVces
Text: 1214-32LR43 1214-32L 32 Watts, 36 Volts Pulsed Radar at 1.2-1.4 GHz CASE OUTLINE 55AW-1 GENERAL DESCRIPTION The 1214-32L is an internally matched, COMMON BASE transistor capable of providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,
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1214-32LR43
1214-32L
1214-32L
55AW-1
Maximum986-8031
RT5870
L-Band 1200-1400 MHz
BVces
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2224-12L
Abstract: No abstract text available
Text: R.A.041400 2224-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2224-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes
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2224-12L
2224-12L
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JTDB25
Abstract: No abstract text available
Text: JTDB25 25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The JTDB25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest
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JTDB25
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48536
Abstract: 74166 data sheet IC 74166 16AM08 178003 162007 stk+142+150
Text: 16AM08 8 Watts, 18 Volts, Class A Linear 1500 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, STYLE 2 The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 8 Watts , P1dB., Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full
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16AM08
16AM08
48536
74166
data sheet IC 74166
178003
162007
stk+142+150
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55AW
Abstract: 1450 transistor
Text: R.1.072099 1516-35 35 WATT, 28V, Pulsed Microwave 1450 - 1550 MHz Proposed Product CASE OUTLINE 55AW, Style 1 GENERAL DESCRIPTION The 1516-35 is a common base transistor capable of providing 35 Watts of Class C, RF output power over the band 1450-1550 MHz. This transistor is
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Vo20mA
55AW
1450 transistor
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MDS60L
Abstract: 1030MHz-1090MHz
Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.
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MDS60L
MDS60L
56653X)
1030MHz
1090MHz
1030MHz-1090MHz
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2224-12L
Abstract: No abstract text available
Text: R.A.041400 2224-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2224-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes
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2224-12L
2224-12L
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TAN250A
Abstract: No abstract text available
Text: TAN250A 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, Style 1 The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest
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TAN250A
TAN250A
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97942
Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Text: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM20
10AM20
Temperatures13
97942
74929
Transistor 5503
231369
TRansistor A 940
273157
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rt6010
Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The
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MDS140L
MDS140L
rt6010
2200uf, 63v electrolytic capacitor
j453
transistor x 313
63v 2200uF
200B
25-mils
J345
1030 PULSED 32uS MODE-S
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JTDB75
Abstract: No abstract text available
Text: JTDB 75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven
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25oC2
JTDB75
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transistor DF 50
Abstract: No abstract text available
Text: DMEG 250 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The DMEG 250 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
transistor DF 50
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microwave amplifier 2.4 ghz 10 watts
Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Text: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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2324-12L
2324-12L
microwave amplifier 2.4 ghz 10 watts
amplifier TRANSISTOR 12 GHZ
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