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    54F21/BCA Rochester Electronics LLC 54F21 - AND GATE, DUAL 4-INPUT - Dual marked (5962-8955401CA) Visit Rochester Electronics LLC Buy
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    54F21 Price and Stock

    Rochester Electronics LLC SNJ54F21FK

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    54F21 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    54F211 Fairchild Semiconductor Random Access Memory Scan PDF
    54F219 National Semiconductor 64-Bit Random Access Memory with TRI-STATE Outputs Original PDF
    54F219DL National Semiconductor 64-Bit Random Access Memory with TRI-STATEE Outputs Original PDF
    54F219DLQB National Semiconductor 64-Bit Random Access Memory with TRI-STATE Outputs Original PDF
    54F219DLQB National Semiconductor Original PDF
    54F219DM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    54F219DMQB Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    54F219FL National Semiconductor 64-Bit Random Access Memory with TRI-STATEE Outputs Original PDF
    54F219FLQB National Semiconductor Original PDF
    54F219FMQB Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    54F219LL National Semiconductor 64-Bit Random Access Memory with TRI-STATEE Outputs Original PDF
    54F219LLQB National Semiconductor 64-Bit Random Access Memory with TRI-STATE Outputs Original PDF
    54F219LLQB National Semiconductor Original PDF
    54F219LMQB National Semiconductor 64-Bit Random Access Memory with TRI-STATE Outputs Original PDF
    54F219LMQB Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    54F21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a


    Original     		PDF 54F219 74F219 74F219 64-Bit SNOS173A

    M38510 10102BCA

    Abstract: SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB
    Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 2000 Listing GIDEP Nr: GIDEP Category: Issued: 01/24/2000 TRB Nr: Product ID (Description): Proposed Date of Change: Description of Change: Effect of Change:


    Original     		PDF LM185BYH2 LM185BYH1 LM185E-1 LM185H-1 LM185WG-1 LM185H-2 M38510 10102BCA SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB

    Motorola transistor smd marking codes

    Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
    Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):


    Original     		PDF

    54F219DLQB

    Abstract: 54F219 54F219FLQB 54F219LLQB F189
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs


    Original     		PDF MN54F219-X 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB M0002060 54F219DLQB 54F219 54F219FLQB 54F219LLQB F189

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E
    Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are


    Original     		PDF 74F219 64-Bit 16-word 64 CERAMIC LEADLESS CHIP CARRIER LCC 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E

    74act3301

    Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
    Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):


    Original     		PDF 88961501HA 5962-8961501QXA DS26F31ME/883 DS26F31MJ/883 DS26F31MW/883 5962-7802302M2A 5962-7802302MEA 5962-7802302MFA DS26F32ME/883 DS26F32MJ/883 74act3301 scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA

    FDC9268

    Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
    Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are


    Original     		PDF 74F219 64-Bit 16-word

    74F219

    Abstract: 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E
    Text: 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are


    Original     		PDF 74F219 64-Bit 16-word 74F219 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW SN 54F21, SN74F21 DUAL 4-INPUT POSITIVE AND GATES D2932, MARCH 1987 Package Options Include Plastic "Small Outline” Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs * S N 5 4 F 2 1 . . . J PACKAGE S N74F21 . D OR N PACKAGE


    OCR Scan     		PDF 54F21, SN74F21 D2932, 300-mil N74F21

    54F21

    Abstract: SNJ54F21J 175C snj54f21fk Marking 7AW 7aw marking
    Text: REVISIONS o LTR oEscnpnoN DATE YR-MO-M APPROVED REV SHEET REV SHEET REV SIXTUS OF SHEETS REV SHEET PMCWA TO PREPARED BY ~ Ijjm Jd . s y fjo b STANDARDIZED MILITARY DRAWING THIS DRAWMG IS AVAILABLE FOR USE BY ALL DB>ARTMENTS AND AGENOES O f THE DEPARTMENT OF DEFENSE


    OCR Scan     		PDF 5962-E1213 5962-89S5401CX SNJ54F21J 5962-8955401DX SNJ54F21M 5962-89554012X SNJ54F21FK JWMM08 54F21 SNJ54F21J 175C Marking 7AW 7aw marking

    74F161 PC

    Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
    Text: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


    OCR Scan     		PDF 54F/74F219 64-Bit 16-word

    Untitled

    Abstract: No abstract text available
    Text: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


    OCR Scan     		PDF 74F219 64-Bit 16-word LUUJ13J 4JL5JL6JL7J18| 16-Lead 16-Lead

    Untitled

    Abstract: No abstract text available
    Text: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


    OCR Scan     		PDF 54F/74F219 64-Bit 16-word L5D11PP Q0flE33b

    Untitled

    Abstract: No abstract text available
    Text: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/29/96 54F219—X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs


    OCR Scan     		PDF MN54F219â 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB -55/100C

    Untitled

    Abstract: No abstract text available
    Text: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are


    OCR Scan     		PDF 54F/74F219 64-Bit 16-word