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    547 MOSFET Search Results

    547 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    547 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    547 MOSFET

    Abstract: AN-547-1 most 450
    Text: AN 547: Putting the MAX II CPLD in Hibernation Mode to Achieve Zero Standby Current January 2009 AN-547-1.0 Introduction To save power, the MAX II CPLD can be completely powered down into hibernation mode during an inactive period. The CPLD can power down automatically, and allow


    Original     		PDF AN-547-1 547 MOSFET most 450

    547 MOSFET

    Abstract: IRFM150 SHD218502 SHD218502A SHD218502B
    Text: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .055 Ohm, 38A MOSFET • Isolated Hermetic Metal Package • Fast Switching


    Original     		PDF SHD218502 SHD218502A SHD218502B SHD2182/A/B IRFM150 547 MOSFET IRFM150 SHD218502 SHD218502A SHD218502B

    547 MOSFET

    Abstract: No abstract text available
    Text: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .055 Ohm, 38A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on


    Original     		PDF SHD2182/A/B SHD218502 SHD218502A SHD218502B IRFM150 547 MOSFET

    IRFM150 equivalent

    Abstract: shd2182
    Text: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .055 Ohm, 38A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on


    Original     		PDF SHD2182/A/B SHD218502 SHD218502A SHD218502B IRFM150 IRFM150 equivalent shd2182

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


    Original     		PDF 2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545

    Untitled

    Abstract: No abstract text available
    Text: ICE30N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 30A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE30N60W 250uA 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02

    Untitled

    Abstract: No abstract text available
    Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		PDF ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE35N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 35A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE35N60W 250uA 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02

    Untitled

    Abstract: No abstract text available
    Text: ICE47N65W Product Summary ID N-Channel Enhancement Mode MOSFET 47A Max V BR DSS ID = 1mA 650V Min rDS(ON) VGS = 10V 0.063Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE47N65W 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    CA5470H

    Abstract: No abstract text available
    Text: HARRIS SEMICOND 4302571 4 0 E T> SECTOR fSl H A R R I S OOBlflâfl 1 IHAS CA5470 Quad Microprocessor BiMOS-E Operational Amplifiers With MOSFET Input/Bipolar Output August 1991 Features Description • High-Speed CMOS Input Stage Provides The C A 547 0 series are integrated circuit operational


    OCR Scan     		PDF CA5470 CA5470. CA5470H. CA5470H

    transistor mosfet bf964s

    Abstract: BF964S z8088
    Text: 7110ÔSb D0b753M 547 IPHIN B F964S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for VHF applications in television tuners. The device is also suitable for use in professional


    OCR Scan     		PDF D0b753M BF964S 7Z80879 7110aEb transistor mosfet bf964s BF964S z8088

    N914

    Abstract: 1N414 diode DG508ACJ
    Text: SILICONIX 33E D INC • Ô 2 547 35 0 D l b 5 5 B 4 « S I X OTSS& rrs i- 12. DG508A/509A 8-Channel/Dual 4-Channel CMOS Analog Multiplexers FEATURES BENEFITS • TTL & CMOS Direct Control Over Military Temperature Range • Easily Interfaced • Communication Systems


    OCR Scan     		PDF DG508A/509A DG508A, DG509A 1N4148 DG508A J3L1N4148 N914 1N414 diode DG508ACJ

    sss5N90

    Abstract: IRFS9Z34
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Continued B V dss (V) lo(on)(A) SSS3N 70 SSS4N 70 SSS5N 70 700 1.80 2.30 2.70 5.000 3.500 2.500 SSS3N 80 SSS4N 80 SSS5N 80 800 1.80 2.30 2.70 SSS2N 90 SSS3N 90 SSS4N 90 SSS5N 90 900 1.80 2.00 2.50 2.80


    OCR Scan     		PDF O-220 IRFS9Z30 IRFS9531 IRFS9541 IRFS9Z34 IRFS9530 IRFS9540 IRFS9631 IRFS9641 sss5N90

    IRFD9120

    Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
    Text: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF irfd9120/9123 IRFD9120 IRFD9123 IBFD9120 1RFIW123 IFD912( FD912: P-36852â 25M735 Glfl23a FD9120 MOSFET IRFd9120 ON950 IF-D91

    SSW60N06

    Abstract: 50V 60A MOSFET SSW60N05 250M SSI60N05 SSI60N06
    Text: SSW60N06/05 SSI60N06/05 N-CHANNEL POWER MOSFETS FEATURES D2-PAK • Lower R os<on • Improved Inductive Ruggedness ■ Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSW60N06/05 SSI60N06/05 SSW60N06/I60N06 SSW60N05/I60N05 SSW60N06 SSI60N06 SSW60N05 SSI60N05 50V 60A MOSFET 250M

    SSS50N06

    Abstract: AGSA 50 250M SSS50N05
    Text: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSS50N06/05 O-220 SSS50N06 SSS50N05 O-220F AGSA 50 250M

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		PDF FS14SM-16A

    ecg mosfet

    Abstract: ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380
    Text: PHILIPS E C G INC SME D • bbS3^5fl 00071b7 bOO ■ ECÛ Pow er M OSFETS ECG Type Description and Application ECG2392 MOSFET, N-Ch, ▲ Enhancement Hi Speed Sw itch Gate to Continuous Drain to Source Drain Transcon­ Source ductance Breakdown Breakdown Current


    OCR Scan     		PDF 00071b7 ecg2392 ecg23s6 00D71tifl ecg mosfet ecg 222 451 MOSFET Depletion MOSFET ECG2382 ECG312 dual gate mosfet ecg 2385 Philips ECG ECG2380

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE FS10ASJ-02 • 4V DRIVE • V D S S . 100V • rDS ON (MAX) .0.190 • I d . 1 0A


    OCR Scan     		PDF FS10ASJ-2 FS10ASJ-02 1CM23 571CH23

    1rfd9120

    Abstract: IRFD9120 00LQ
    Text: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =


    OCR Scan     		PDF IRFD9120 -100v 0-60Q 150KQ 1rfd9120 00LQ

    Untitled

    Abstract: No abstract text available
    Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP5N80A iti4142 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    PHILIPS dual gate mosfets

    Abstract: ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion
    Text: PHILIPS E C G INC SME J> M bbSa^fi DD071b7 bGO « E C G Power MOSFETS ECG Type Description and Application ECG2392 M O S FET , N-Ch, ▲ Enhancement H i Speed S w itch Drain to Gate to Continuous Transcon­ Source Drain Source Breakdown Breakdown Current ductance


    OCR Scan     		PDF DD071b7 ECG2392 ECG2386 00D71Lifl PHILIPS dual gate mosfets ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion

    AN7254

    Abstract: rca 549 RFP25N05L AN-7254 AN7260 rca application notes
    Text: Logic-Level Power MOSFETs RFP25N05L File Number 2270 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V Tdsloni —0.047 Cl Features: • Design optimized for 5 volt gate drive m Can be driven directly from Q-MOS, N-MOS, TTL Circuits


    OCR Scan     		PDF RFP25N05L RFP25N05L AN-7254 AN-7260. 92GS-44165 92CS-42922 AN7254 rca 549 AN7260 rca application notes

    IRL3705NS

    Abstract: IRL3705NL
    Text: PD - 9.1502B International IG R Rectifier IRL3705NS/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3705NS Low-profile through-hole (IRL3705NL) 175°C Operating Temperature Fast Switching


    OCR Scan     		PDF IRL3705NS) IRL3705NL) 1502B IRL3705NS/L 89Ace IRL3705NS IRL3705NL