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    SSW60N06

    Abstract: 50V 60A MOSFET SSW60N05 250M SSI60N05 SSI60N06
    Text: SSW60N06/05 SSI60N06/05 N-CHANNEL POWER MOSFETS FEATURES D2-PAK • Lower R os<on • Improved Inductive Ruggedness ■ Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSW60N06/05 SSI60N06/05 SSW60N06/I60N06 SSW60N05/I60N05 SSW60N06 SSI60N06 SSW60N05 SSI60N05 50V 60A MOSFET 250M

    irfm014

    Abstract: 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995
    Text: FUNCTION GUIDE MOSFETs SOT-223 N-CHANNEL BVdss V lo|on)(A) Ros(on)( g ) W!¡a(K/W) PD(Watt) Page IRFM014 60 2.70 0.200 40.000 3.1 986 NEW IRFM110 100 1.50 0.540 40.000 3.1 989 NEW B V d s s (V) lD(on)(A) Ros(on)(Q) R0jc(K/W) PD(Watt) Page IRFWZ10 IRFWZ20


    OCR Scan     		PDF OT-223 IRFM014 IRFM110 IRFWZ10 IRFWZ20 IRFWZ30 IRFWZ40 SSW50N05 SSW60N05 IRFWZ14 100-4 k d 998 SSI50N06 IRFM014 sot223 IRFIZ30 g 995