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    JST Manufacturing CDS-STO41-187N-CMK-R

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    DigiKey CDS-STO41-187N-CMK-R Bulk 1
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    JST Manufacturing CDS-STO01-187N-CMK-R

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    JST Manufacturing CDS-STO82-187N-CMK-R

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    JST Manufacturing CDS-STO62-187N-CMK-R

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    187NC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE47N65W Product Summary ID N-Channel Enhancement Mode MOSFET 47A Max V BR DSS ID = 1mA 650V Min rDS(ON) VGS = 10V 0.063Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE47N65W 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB8160_F085 N-Channel PowerTrench MOSFET 30V, 80A, 1.8mΩ Features Applications „ Typ rDS on = 1.5mΩ at VGS = 10V, ID = 80A „ 12V Automotive Load Control „ Typ Qg(10) = 187nC at VGS = 10V „ Starter/Alternator Systems „ Low Miller Charge „ Electronic Power Steering Systems


    Original     		FDB8160 187nC O-263AB PDF

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60_F085 N-Channel MOSFET November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features „ Typ rDS on = 64mΩ at VGS = 10V, ID = 47A „ Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101


    Original     		FCH47N60 187nC O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE30N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 30A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE30N60W 250uA 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE35N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 35A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE35N60W 250uA 187nC O-247 100us 0E-06 0E-05 0E-04 0E-03 0E-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF