MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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Original
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
700000H-7FFFFFH
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PDF
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BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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Original
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128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages
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Original
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
09005aef80be1fbd
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PDF
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micron memory sram
Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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Original
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128Mb
MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
micron memory sram
a22 package marking
label infineon
Micron 32MB NOR FLASH
DEVICE MARKING CODE table
dram zip
INFINEON transistor marking
label infineon application note
marking code C5
RCR Resistor
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PDF
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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Original
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128Mb
MT45W8MW16BGX
54-Ball
39nsH
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
BDQ8
CSP3-20
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PDF
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MT48LC16M16LF
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16M16LF, MT48G16M16LF, MT48V16M16LF 4 MEG X 16 X 4 BANKS Features Figure 1: Ball Assignment Top View 54-Ball VFBGA • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can
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256Mb:
192-cycle
16M16
54-pin
09005aef80737ef7
256Mbx16
MT48LC16M16LF
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PDF
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jesd 51-7
Abstract: 63 ball Vfbga thermal resistance 56DL metcal apr 5000 MO-205 56ZQL BGA Ball Crack 054UG08C127 APR-5000
Text: Application Report SZZA040 - December 2003 54BGA Package Frank Mortan SLL Package Development ABSTRACT The TI 54-ball low-profile, fine-pitch, ball grid array TFBGA meets dimensions specified in JEDEC MO-205, Variation DD. This 0.8-mm-pitch BGA allows economical OEM designs
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Original
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SZZA040
54BGA
54-ball
MO-205,
16-bit
jesd 51-7
63 ball Vfbga thermal resistance
56DL
metcal apr 5000
MO-205
56ZQL
BGA Ball Crack
054UG08C127
APR-5000
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PDF
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962n
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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Original
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09005aef80ec6f63
pdf/09005aef80ec6f46
962n
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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Original
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
pdf/09005aef80be2036
09005aef80be1fbd
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PDF
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DEVICE MARKING CODE table
Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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Original
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MT45W4MW16BFB
54-Ball
09005aef80be1fbd
pdf/09005aef80be2036
DEVICE MARKING CODE table
INFINEON transistor marking
INFINEON TVS diode process
marking code C5
marking code j6
sus material 304
MT45W4MW16B
thd202
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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Original
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09005aef80be1fbd
pdf/09005aef80be2036
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PDF
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Micron 32MB NOR FLASH
Abstract: 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection
Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY MT45W2MW16BAFB MT45W1MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Random Access Time: 70ns, 85ns
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Original
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MT45W2MW16BAFB
MT45W1MW16BAFB
54-Ball
Ini80ec6f46
09005aef80ec6f63
pdf/09005aef80ec6f46
Micron 32MB NOR FLASH
0-30v power
DEVICE MARKING CODE table
INFINEON transistor marking
label infineon application note
marking code C5
RCR Resistor
active suspension sensor
micron cmos sensor connection
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PDF
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Untitled
Abstract: No abstract text available
Text: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock
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Original
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096-cycle
09005aef808a7edc
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PDF
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Untitled
Abstract: No abstract text available
Text: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock
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Original
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MT48H4M16LF
54-Ball
096-cycle
09005aef80a63953,
09005aef808a7edc
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock
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Original
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128Mb:
096-cycle
09005aef80c97015
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock
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Original
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096-cycle
09005aef808a7edc
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PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock
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Original
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128Mb:
096-cycle
09005aef80c97015
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PDF
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CYL008M162FFBU-1ABAI
Abstract: M2A2
Text: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package
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CYL008M162FFB
128-Mbit
54-ball
CYL008M162FFB
CYL008M162FFBU-1ABAI
M2A2
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PDF
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FX109
Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
FX109
FY108
"NOR Flash" intel 28f
MT28F644W18
FY113
FX113
FW117
fw12
FW118
FY114
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PDF
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FX119
Abstract: FX117
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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16-bit)
09005aef8098d2b5
MT28F644W30
FX119
FX117
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PDF
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48 ball VFBGA
Abstract: 90 ball VFBGA LVTH162 micro pitch BGA tSSOP 56 socket TSSOP YAMAICHI SOCKET 48-PIN 56-PIN ALVCH16373 LVCH16244A
Text: Application Report SZZA029B - May 2002 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch, Very Thin Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT TI’s 56-ball MicroStar Jr. package, registered under JEDEC MO-225, has demonstrated
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SZZA029B
16-Bit
56-Ball,
65-mm
56-ball
MO-225,
48-pin
56-pin
48 ball VFBGA
90 ball VFBGA
LVTH162
micro pitch BGA
tSSOP 56 socket
TSSOP YAMAICHI SOCKET
ALVCH16373
LVCH16244A
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PDF
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SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
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PDF
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FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
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Original
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16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
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PDF
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SR52 W 18
Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
SR52 W 18
FX118
transistor marking A21
FY114
Fw*118
fw104
intel marking 28f
intel package marking w18
marking PBA
marking W18
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PDF
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