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    535 SOT23 Search Results

    535 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
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    535 SOT23 Price and Stock

    Aries Electronics Inc LCQT-SOT23-6

    Sockets & Adapters SO Prototyp Adaptor 6 contact SOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LCQT-SOT23-6 586
    • 1 $2.83
    • 10 $2.38
    • 100 $2.26
    • 1000 $1.64
    • 10000 $1.52
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    535 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    kps-5130pd7c

    Abstract: KPS-3227SP1C KA-2735ESGC KM2520CGCK03 KPS5130 KPT-1608SURCK SMD 3528 RGB KPB-3025SRCGKC KA-4040SURC kpa-1606
    Text: P 2-3 HIGH CURRENT LED LAMPS P 4-10 SURFACE MOUNT LED LAMPS P 21 THROUGH HOLE LED LAMPS P 22-23 SMD INFRARED EMITTING DIODES P 24 SMD PHOTOTRANSISTORS P 25 AMBIENT LOGHT SENSOR & COLOR SENSOR P 26-33 SMD TAPE SPECIFICATIONS P 34-36 RECOMMENDED SOLDERING PATTERN


    Original     		PDF KAF-5060 KAD1-9090 350mA KAF-5060PBGSURKVGAC KAF-5060PBGSEEVGAC KPD-3224 KPED-3528 KA-3528A KPED-3820 KPTB-1612 kps-5130pd7c KPS-3227SP1C KA-2735ESGC KM2520CGCK03 KPS5130 KPT-1608SURCK SMD 3528 RGB KPB-3025SRCGKC KA-4040SURC kpa-1606

    sot-223 93

    Abstract: 3301 sot-89 3301-1000 5201 sot223
    Text: Package Information Package Types QFP Quad Flat Package The following are the package types and widths offered by Holtek. Pin Count DIP (Dual In-line Package) Pin Count Package Width Package Width 44, 48 10mm ´ 10mm 52 14mm ´ 14mm 8, 14, 16, 18, 20 300mil


    Original     		PDF 300mil 400mil 600mil 1mm/20pitches. sot-223 93 3301 sot-89 3301-1000 5201 sot223

    on semiconductor marking code 518

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KIC7508~7560M/T5 TECHNICAL DATA Analog CMOS Integrated Circuits IC for CMOS Detector Monolithic IC KIC75* Series This IC functions in a variety of CPU systems and other logic systems, to detect supply voltage and reset the system accurately when the power is


    Original     		PDF KIC7508 7560M/T5 KIC75* on semiconductor marking code 518

    SSOP48W

    Abstract: SSOP20N 18w sot23 transistor TSSOP16 MO-150 MO-187 MO-220 MS-013 SSOP20S 103001 for mouse
    Text: Package Information Package Types The following are the package types and widths offered by Holtek. Pin Count DIP Dual In-line Package 80, 100, 128 14mm ´ 20mm 208 28mm ´ 28mm Pin Count Package Width 8, 14, 16, 18, 20 300mil 24, 28, 32, 40, 42 600mil 28, 32, 40 (Ceramic)


    Original     		PDF 300mil 600mil SSOP48W SSOP20N 18w sot23 transistor TSSOP16 MO-150 MO-187 MO-220 MS-013 SSOP20S 103001 for mouse

    KA-2735

    Abstract: KA-2735ESGC KM-23YD-F KA-2735SURKMGC
    Text: SURFACE MOUNT LED LAMPS KA-2735 KM-23-F Part No. Material λD nm Lens Type Iv (mcd) @20mA Min. Typ. View ing Angle Dimension 2θ θ 1/2 2.7mm x 3.5mm (Bi-Color) GaAsP/GaP 625 7 30 120° water clear KA-2735ESGC GaP 568 7 30 InGaAlP 635 70 200 KA-2735SURKMGC


    Original     		PDF KA-2735 KM-23-F KA-2735ESGC KA-2735SURKMGC KM-23ID-F KM-23EC-F KM-23SRD-F KM-23SRC-F KM-23YD-F KM-23YC-F

    ZF SOT23

    Abstract: No abstract text available
    Text: SOT-23 SURFACE MOUNT LED LAMP Part Number: KM-23VGC-Z-F PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z SOT-23 PACKAGE SURFACE MOUNT LED LAMP. The Green source color devices are made with InGaN Light


    Original     		PDF OT-23 KM-23VGC-Z-F 2000PCS DSAH1062 JUL/11/2007 ZF SOT23

    MMBF4091

    Abstract: 4092 4093 PN4092 4091
    Text: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample


    Original     		PDF PN4091 MMBF4091 PN4092 PN4093 MMBF4092 MMBF4093 OT-23 4092 4093 4091

    Untitled

    Abstract: No abstract text available
    Text: 19-1586; Rev 0; 7/00 Low-Voltage, Step-Down DC-DC Converters in SOT23 Internal synchronous rectification greatly improves efficiency and eliminates the external Schottky diode required in conventional step-down converters. Both devices also include internal digital soft-start to limit


    Original     		PDF 250mA MAX1734) MAX1733) MAX1733/MAX1734

    Philips ECG125

    Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


    OCR Scan     		PDF Q00720S ECG109 ECG110A ECG110MP ECG112 ECG113A 72OLARITY OT-23 SP-92 ECG615A Philips ECG125 t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151

    diode ECG125

    Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
    Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time


    OCR Scan     		PDF bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky

    MA4T64500

    Abstract: 4558 MA4T64535 557 sot143 micro X
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV


    OCR Scan     		PDF 4T64500 MA4T64533 MA4T64535 OT-23 MA4T64539 OT-143 MA4T645XX OT-143) MA4T64500 4558 MA4T64535 557 sot143 micro X

    DIODE S2E

    Abstract: No abstract text available
    Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery


    OCR Scan     		PDF T-39-01 110MP 100pA T0220 OT-23 DIODE S2E

    MA4T64400

    Abstract: low noise transistors MA4T645 MA4T644
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t


    OCR Scan     		PDF A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644

    1235Z

    Abstract: 35Z diode KV1226 KV1236Z KV1236 toko VARIABLE CAPACITORS V1420 KV1235Z TOKO sot-23 Toko KV1226
    Text: 3bE » TOKO AMERICA INC • TDbTlaBS D0D1S73 S ■ TAI T 'O l'l^ TO K O DI0DES Variable Capacitance Diode Application For AM, FM, UHF AM FM t f — KffliÉSU— K • KV1230Z • KV1234Z • AM Variable Capacitance KV1235Z KV1236Z • KV1250 • KV1260 •


    OCR Scan     		PDF D0D1S73 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1250 KV1260 KV1260-2 KV1280 1235Z 35Z diode KV1236 toko VARIABLE CAPACITORS V1420 TOKO sot-23 Toko KV1226

    NF1100

    Abstract: No abstract text available
    Text: BCW31 NPN EPITAXIAL SILICON TRAN SISTO R G EN ERAL PU RPO SE TRANSISTOR SOT-23 A BSO LU TE MAXIMUM RATINGS TA=25'C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCW31 OT-23 KST5088 10/iA, NF1100

    MMBT4123

    Abstract: transistor sot-23 marking L8
    Text: SAM S UN G SEM ICO NDUCTOR INC MMBT4123 1ME 0 | ^4145 00072t*S 5 | NPN EPITAXIAL SILICON TRANSISTOR T-aq-tì GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Co#ector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBT4123 OT-23 100MHz 100MHz 10OKHz 100KHz transistor sot-23 marking L8

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF bb53T31 DD34bM3 BF550

    Substrate alumina

    Abstract: No abstract text available
    Text: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12


    OCR Scan     		PDF BAW56LT1* OT-23 O-236AB) BAW56LT1 Substrate alumina

    KV1234Z

    Abstract: No abstract text available
    Text: 23 TOKO DIODES ¥ 4* - K Variable Capacitance Diodes Application For AM Layout KV1225 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1260 KV1260-2 KV1260M KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3 Tun. Tun. VCO Tun. Tun. Tun. Tun. Tun. Tun. Tun. Tun. VCO Tun.


    OCR Scan     		PDF KV1225 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1260 KV1260-2 KV1260M KV1280-1 KV1234Z

    transistor sot-23 marking L8

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC ! MMBT4123 | 7 1 i.U « e BOOM M . s j NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT4123 OT-23 transistor sot-23 marking L8

    fet n-channel pin configuration

    Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
    Text: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage


    OCR Scan     		PDF BSS138 OT223 MBB180 fet n-channel pin configuration transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180

    BF550

    Abstract: transistor marking code 325 0024-B
    Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF 24LMC] BF550 OT-23 BF550 transistor marking code 325 0024-B

    DIODE SW-05

    Abstract: No abstract text available
    Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40


    OCR Scan     		PDF 110MP OT-23 200MHz T0220 b43125T 0P03SSÃ DIODE SW-05

    common anode schottky to220

    Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
    Text: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)


    OCR Scan     		PDF 110MP OT-23 200MHz T0220 QQ0355Ã common anode schottky to220 diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual