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    53131 Search Results

    53131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10136353-13111LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Receptacle Right Angle Surface Mount Type, Tin plating, 13 positions Visit Amphenol Communications Solutions
    88953-131LF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, 4 Row Signal Header, Straight, Solder-to-Board, Wide body. Visit Amphenol Communications Solutions
    10135313-10YLF Amphenol Communications Solutions AirMAX VS2®, Backplane Connectors, 5-Pair, 8 Column, 120-Position, 2.0mm, , Right Angle Receptacle, Press-Fit Visit Amphenol Communications Solutions
    10137985-3131169LF Amphenol Communications Solutions Conan® 1.00mm Connector, Board to Board connector, Vertical Receptacle, Surface Mount, 69 Positions, 1.00mm ( 0.039in) Pitch. Visit Amphenol Communications Solutions
    10137785-053131LF Amphenol Communications Solutions Minitek® Pwr 4.2 HCC, Single Row, Vertical Through Hole Header, LCP, 15u\\ Gold (Tin on Tails) plating, Natural Color, 5 Positions, GW Compatible, with Post, Tray packing. Visit Amphenol Communications Solutions
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    53131 Price and Stock

    Wurth Elektronik 782853131

    FERRITE BEAD 120 OHM 0805 1LN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 782853131 Cut Tape 4,189 1
    • 1 $0.22
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    • 1000 $0.0666
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    782853131 Digi-Reel 4,189 1
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    Mouser Electronics 782853131 8,800
    • 1 $0.25
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    • 100 $0.185
    • 1000 $0.074
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    Newark 782853131 Cut Tape 3,680 10
    • 1 -
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    • 100 $0.192
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    Molex 1053131206

    CONN HEADER R/A 6POS 2.5MM
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    DigiKey 1053131206 Tray 4,045 1
    • 1 $1.81
    • 10 $1.362
    • 100 $1.362
    • 1000 $0.91829
    • 10000 $0.77373
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    Molex 1053131105

    CONN HEADER R/A 5POS 2.5MM
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    DigiKey 1053131105 Tray 3,515 1
    • 1 $1.08
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    Avnet Abacus 1053131105 19 Weeks 85
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    1053131105 18 Weeks 1,920
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    Molex 1053131305

    CONN HEADER R/A 5POS 2.5MM
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    DigiKey 1053131305 Tray 1,155 1
    • 1 $2.71
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    • 100 $2.056
    • 1000 $1.33991
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    Avnet Abacus 1053131305 20 Weeks 1,920
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    Sager 1053131305 1,920
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    Molex 2153131033

    MIZU-P25 P-S 3CKT 600MM SN
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    DigiKey 2153131033 Bag 1,133 1
    • 1 $4.1
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    TTI 2153131033 Each 50 2
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    Avnet Abacus 2153131033 30 Weeks 1,150
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    53131 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    53131A/ABA Agilent Technologies Over 600 obsolete distributor catalogs now available on the Datasheet Archive - COUNTER, 225 MHZ UNIVERSAL COUNTER 10 DIGITS/S Scan PDF
    53131A-ABF Agilent Technologies High-performance, low-cost counters simplify and speed systems and bench frequency measurements Original PDF

    53131 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Agilent 53131A/132A/181A Counters High-performance, low-cost counters simplify and speed systems and bench frequency measurements Data Sheet Recommended replacement products: 53200 Series RF & universal frequency counter/timers Data sheet publication number: 5990-6283EN


    Original
    3131A/132A/181A 5990-6283EN) 12-digit 3131A/132A/ 5967-6039EN PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery


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    002244S BYR30 BYR30-500 0DEEM51 0D22452 T-03-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE E5E D • ^53131 QQEHb 31 E ■ BYV74 SERIES J y 7^03-1* ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and soft-recovery characteristic. They are


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    BYV74 T-03-19 PDF

    BSR12

    Abstract: No abstract text available
    Text: ^53131 DD3S5b4 0T2 H A P X N AUER PHI LIP S/DISCRETE BSR12 E7E D J V SILICON LOW-POWER SWITCHING TRANSISTORS P-N-P silicon transistor in a microminiature plastic envelope. It is intended for high-speed, saturated switching applications for industrial service in thick and thin-film circuits.


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    BSR12 7Z77668 BSR12 PDF

    transistor IC BT 134

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


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    005D3bS 444-450B hbS3T31 transistor IC BT 134 PDF

    BUK455-500B

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE D bb.53131 DDBObba 76T H A P X Product Specification Philips Semiconductors PowerM OS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    O220AB BUK455-500B BUK455-500B PDF

    NDS 40-20

    Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    BUK442-50A BUK442-50B BUK442 NDS 40-20 NDS 40-30 BUK442-50B 00E0333 PDF

    BUS21

    Abstract: BUS21B BUS21C TO3 philips T-33-73
    Text: N AMER PHILIPS/DISCRETE 5SE D • ^53131 0G1Ö741 Q ■ BUS21 SERIES T - 33-/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


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    BUS21 T-33-/3 BUS21C BUS21B BUS21C TO3 philips T-33-73 PDF

    philips bfq

    Abstract: BFQ253A BFQ233 BFQ233A BFQ253
    Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a


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    03173b BFQ253; BFQ253A BFQ233 BFQ233A fcj53131 BFQ253A philips bfq BFQ253 PDF

    BFG90A

    Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
    Text: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.


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    QQ17t73i BFG51 OT-103) BFG90A. 7Z94139 bh53131 0Q17b77 BFG90A BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136 PDF

    MC 140 transistor

    Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
    Text: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUZ355T is-18 T0218AA; BUZ355 T-39-13 MC 140 transistor "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a PDF

    V103 TRANSISTOR

    Abstract: BUZ80A T0220AB V103 buz80
    Text: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in


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    BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80 PDF

    Untitled

    Abstract: No abstract text available
    Text: QbE D N AMER PHILIPS/DISCRETE • ^53131 Q011T47? |[ B TW 43 SERIES o c r . i c - / TRIACS Glass-passivated silicon triacs in metal envelopes, intended for industrial a.c. power control and particularly suitable fo r static switching o f 3-phase induction motors. They may also be used for


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    Q011T47? BTW43-600 bbS3131 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video


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    T-33-05 00m04b BLX91CB OT-48/3. 7Z92365 PDF

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX93A tbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53131 D O a E b ? 11 & ■ B Y V 118F S E R IE S J 7=0 2 -1 7 v SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack) plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. Their electrical


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    OT-186 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • bt.53131 0015^75 4 ■ I BSR40 to 43 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits.


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    BSR40 BSR42 BSR43 BSR41 BSR40 BSR41 BSR42 PDF

    BYX50-200

    Abstract: BYX50 PHILIPS BYX50-200 ALPS 102 IEC134
    Text: N AUER PH IL IPS/DISCR ETE TDD D 1^53131 0010S20 T BYX50 SERIES T -0 3 -/7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists of the following types:


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    0010S20 BYX50 T-03-/7 BYX50-200, BYX50- 10-dE b53T31 BYX50-200 PHILIPS BYX50-200 ALPS 102 IEC134 PDF

    BUK442-50A

    Abstract: BUK442 BUK442-50B
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ PowerMOS transistor BUK442-50A BUK442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


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    BUK442-50A BUK442-50B BUK442 PDF

    BUZ24

    Abstract: IEC134
    Text: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


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    00145T6 BUZ24 T-39-13 BUZ24 IEC134 PDF

    BF994 M94

    Abstract: BF994 FET MARKING CODE
    Text: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and


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    Q0i30Qa BF994 BF994 M94 BF994 FET MARKING CODE PDF

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


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    BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A PDF

    15S2

    Abstract: BY229F IEC134 M2296 D8663
    Text: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse


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    0GSS30S BY229F T-03-17 BY229Fâ tLS3T31 D8382 53T31 D0E531b 15S2 IEC134 M2296 D8663 PDF

    BFU310

    Abstract: BFU308 BFU309 L7E transistor transistor 309
    Text: ^53131 Philips Semiconductors □□E3bfl4 TT7 APX Preliminary specification N-channel silicon field-effect transistors mi N AHFR FEATURES BFU308/309/310 PHT I T P S / D T S f R F T F L7F D PIN CONFIGURATION • Low noise • Interchangeability of drain and


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    BFU308/309/310 PINNING-TO-18 BFU308 BFU309 BFU310 total00 BFU308, bfu308/309/310 BFU310 BFU309 L7E transistor transistor 309 PDF