658512
Abstract: No abstract text available
Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)
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KM658512/L/L-L
120ns
210ns
200mW
Cycles/32ms
itiA/200
KM658512L-L
32-Pin
600mil)
525mll)
658512
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A-1435
Abstract: No abstract text available
Text: LH532048 C M O S 2M 128K x 16 M ask-P ro g ram m ab le ROM FEATURES • 131,072 words x 16 bit organization • Access time: 100 ns (MAX.) PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / • Static operation • TTL compatible I/O • Three-state outputs
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LH532048
40-pin,
600-mil
525-mil
44-pin,
650-mil
40-PIN
A-1435
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Untitled
Abstract: No abstract text available
Text: KM684000LI / Ll-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version
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KM684000LI
512Kx8
100ns
550uW
385mW
KM684000LGI/LGI-L:
525mll)
684000LTI/LTI-L
400mil)
KM684000LRI/LRI-L:
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Untitled
Abstract: No abstract text available
Text: VA UNITE /MICROELECTRONICS 512Kx8 S RAM p r e l im in a r y WPS512K8L-XXX * PLASTIC PLUS FEATURES • PIN CONFIGURATION TOP VIEW ■ A14 C A12C A7C A6C A5 C 3 4 S i/ooC 13 1/01C 14 I/02C 15 Vss □ 16 • 32 Pin 600mil Plastic DIP 31 □ A15 30 □ A17
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512Kx8
WPS512K8L-XXX
600mil
525mil
525mll
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: \ 'A WHITE MICROELECTRONICS 512Kx8SRAM WPS512K8L-XXX PRELIMINARY* PLASTIC PLUS FEATURES PIN CONFIGURATION TOP VIEW A18 C 1 W • A ccess Tim es 55, 70, 85ns ■ S tandard C om m ercial O ff-T he -S helf COTS M e m o ry ■ J EDEC S tandard Packages: Devices fo r Extended Tem pe ratu re Range
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WPS512K8L-XXX
512Kx8SRAM
600mll
525mll
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: LH538300C CMOS 8M 1M x 8 Mask-Programm able ROM PIN CONNECTIONS FEATURES • 1,048,576 words x 8 bit organization • Access time: 150 ns (MAX.) 3 2 -P IN D IP 3 2 -P IN S O P T O P V IE W A 19C • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550
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LH538300C
32-pin,
600-mil
525-mil
400-mil
32-pln,
LH538300C
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CXK581000
Abstract: No abstract text available
Text: SONY C X K 5 8 1 P / M -12LB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low
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-12LB
131072-word
CXK581000P/M
240ns
120ns
/35mW
CXK581000P
CXK581000P/M
IP032-P-0600-A
CXK581000M
CXK581000
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lh5308
Abstract: No abstract text available
Text: LH530800A-Y PIN CONNECTIONS FEATURES • 131,072 words CMOS 1M 1 2 8 K - 8 3 V-Drive Mask-Programmable ROM x 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V • Low-power consumption: Operating: 193 mW (MAX.)
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LH530800A-Y
32-pin,
600-mil
525-mil
525-mll
LH530800A
lh5308
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