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    Am27C291

    Abstract: No abstract text available
    Text: ADV M IC R O 14E D I MEMORY 0 5 S 7 S a a 0 0 2 7 7 0 0 _4 | -z s A m 2 7 C 1 9 1 /A m 2 7 C 2 9 1 16,384-Bit 2048x8) High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed <25 ns)/Low-Power (60 mA) C M O S E P R O M Technology


    OCR Scan     		PDF 384-Bit 2048x8) 300-mll Am27C291 600-mll Am27C191 Am27C191/Am27C291 0176A-6 T-46-13-29

    Untitled

    Abstract: No abstract text available
    Text: AT27C01 O/L Features • • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 |iA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		PDF AT27C01 AT27C010L) AT27C010) 32-Lead 600-mll 32-Pad AT27C010/L AT27C010L-12TC AT27C010L-15TC

    Untitled

    Abstract: No abstract text available
    Text: AT27LV1024 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C1024 Low Power CMOS Operation 100 |iA max. Standby 33 mW max. Active at 1 MHz for Vcc = 3.3 VDC 165 mW max. Active at 5 MHz for Vcc = 5.5 VDC


    OCR Scan     		PDF AT27LV1024 AT27C1024 40-Lead, 600-mll 44-Pad AT27LV1024-25LI 40DW6 AT27LV1024-30DC AT27LV1024-30JC AT27LV1024-30KC

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 23E D • 374=171=5 000*1302 O ■ F U JITSU April 1988 Edition 1.0 'T :4 k -iV Z 7 256K BIT 32,768 X 8 CMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY Tho Fujitsu MBM28C256 Is a high speed read-only static memory that Is electrically


    OCR Scan     		PDF MBM28C256 768-byte/8-blt 28-pln 600mll)

    FUJITSU MB8464A

    Abstract: MB8464A-10-W mb8464a MBB464A 990kc MB8464A-15-W
    Text: FUJITSU M I C R O E L E C T R ON I C S 23E D • 3 7 4 1 7 b 2 '0007^55 5 ■ T -4 k -2 3 > - 2 , October 1989 Edition 1.0 _ DATA S H E E T FUJITSU - MB8464A-10-W/-15-W CMOS 64K-BIT LOW POWER SRAM 8.192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION


    OCR Scan     		PDF MB8464A-10-W/-15-W 64K-BIT 192WORDS MB8464A 8192-word t3-12 MB8464A-10-W MB8464A-15-W 28-LEAD FUJITSU MB8464A MBB464A 990kc MB8464A-15-W

    KM23C4001

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C4001 512Kx8) KM23C4001 288x8 150ns 32-pin, 600mll, b4142

    27c040-10

    Abstract: 27C040-12 1S84 8332 memory 27C040-15 SMJ27C040
    Text: SMJ27C040 4194304-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046A- NOVEMBER 1992 - REVISED JUNE 1995 J PACKAGE Organization . . . 512K x 8 Single 5-V Power Supply Industry Standard 32-Pin Dual-in-line Package All inputs/Outputs Fully TTL Compatible


    OCR Scan     		PDF SMJ27C040 4194304-BIT SGMS046A- 32-Pin 27C040-10 27C040-12 27C040-15 400-mV SMJ27C040 1S84 8332 memory

    CQCC2-N28

    Abstract: 82S181A 1024 x 4 prom GDIP1-T24
    Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I


    OCR Scan     		PDF 82S181A 82S181A 500ns 711Qfi2b CQCC2-N28 1024 x 4 prom GDIP1-T24

    fujitsu 1988

    Abstract: No abstract text available
    Text: FU JITSU 256K CM O S ELECTRICALLY ERASABLE PROM MBM28C256 April 1988 Edition 1.0 256K BIT 32,768 x 8 CMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM28C256 is a high speed read-only static memory that Is electrically erasable and reprogram mable. The device contains 262,144 reprogrammable bits


    OCR Scan     		PDF MBM28C256 MBM28C256 28-pin 600mll) DIP-28P-M fujitsu 1988

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23V16101A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 X 8 bit organization • Fast access tim e: 200ns max.) • Supply voltage: single+3V or +3.3V • Current consumption Operating: 25 mA(max.) at VCC=3.0V± 0.3


    OCR Scan     		PDF KM23V16101A 16M-Bit 200ns 36-pin, 600mll, KM23V16101A KM23V16101A-20 KM23V16101A-25 KM23V16101A-30

    KM23C4001b

    Abstract: mask rom TA-51
    Text: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001B 512KX8) 120ns 32-pin, 600mll, 288x8 mask rom TA-51

    KM681000

    Abstract: A12E
    Text: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation


    OCR Scan     		PDF KM681000/KM681000L 120ns 32-pin 600mll) 450mil) KM681000/L 576-bit KM681000 A12E

    IC 2030 PIN CONNECTIONS

    Abstract: No abstract text available
    Text: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)


    OCR Scan     		PDF LH531VOO 32-pin, 600-mil 525-mil 32-PIN LH531V00 IC 2030 PIN CONNECTIONS

    PLUS105-45N3

    Abstract: PLUS105-45N
    Text: Philips Components-Signetics Document No. 853 -1 3 51 ECN No. 99570 Date of Issue M ay 9, 1990 Status Pro du ct S pecification P L U S 10 5 -4 5 Programmable logic sequencer 1 6 x 4 8 x 8 Program m able L ogic D evices PIN CONFIGURATIONS DESCRIPTION FEATURES


    OCR Scan     		PDF PLUS105-45 PLUS105-45N3 PLUS105-45N

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS 16M 2M x 8/1M x 16 MROM With Page Mode L H 5 3 B 1 6 P 0 0 FEATURES • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) Page mode: 50 ns (MAX.) PIN CONNECTIONS


    OCR Scan     		PDF 42-pin, 600-mil 44-pin, 44SOP OP044-P-0600)

    Untitled

    Abstract: No abstract text available
    Text: LH5496/96H FEATURES • Fast Access Times: 15 720/25/35/50/65/80 ns CMOS 5 1 2 x 9 FIFO PIN CONNECTIONS 28-PIN PDIP TOP VIEW • Full CMOS Dual Port Memory Array • Fully Asynchronous Read and Write • Expandable-in Width and Depth W C 1• 28 —I ^ c c


    OCR Scan     		PDF LH5496/96H 28-Pin, 300-mil 600-mil 32-Pin IDT7201 LH5496/96H 32-pin, 450-mil

    Untitled

    Abstract: No abstract text available
    Text: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		PDF LH534600B 40-pin, 600-mil 525-mil 48-pin, LH534600B 8/256K 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion


    OCR Scan     		PDF 32-pin IS28F010-45WI IS28F010-45PLI IS28F010-45TI 600-mll IS28F010-70WI IS28F010-70PLI IS28F010-70TI 600-mil IS28F010-90WI

    Untitled

    Abstract: No abstract text available
    Text: High Performance 10 24x8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Featu res/B en efits Description • 30-ns m aximum access time T h e 53/63S881 a nd 5 3/63S 881A are 1024x8 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t PNP in p u ts , fu ll S c h o ttk y c la m p in g ,


    OCR Scan     		PDF 30-ns 53/63S881 3/63S 1024x8 63S881 S3S881

    AT27C010L-20

    Abstract: AT27C010-20PC AT27C010-15DM at27c010-12dc
    Text: AT27C010/L Features • • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 nA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		PDF AT27C010/L AT27C010L) AT27C010) 32-Lead 600-mll 32-Pad AT27C010/L AT27C010L-12TC AT27C010L-15TC AT27C010L-20 AT27C010-20PC AT27C010-15DM at27c010-12dc

    Untitled

    Abstract: No abstract text available
    Text: LH538P00B FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation • TTL compatible I/O


    OCR Scan     		PDF LH538P00B 42-pin, 600-mil 44-pin, 48-pin, 42-PIN 8/512K 600-mll

    TAA 293A

    Abstract: CY7C smd code LY Q
    Text: CY7C291A CY7C292A/CY7C293A r ' Y P P P ’C jc ; —- SEMICONDUCTOR Reprogrammable 2K x 8 PROM • Direct replacement for bipolar PROMi • Capable of withstanding > 2001V stat­ ic discharge Features • W indowed fo r rep ro g ram m ab ility • C M O S Tor o p tim u m speed/pow er


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mll 7C291A 7C292A, 7C293A 291-50T CY7C291 --50W TAA 293A CY7C smd code LY Q

    CXK58257AM-70LL

    Abstract: SONY 171 CXK58257AP
    Text: S ony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX] 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is suitable


    OCR Scan     		PDF CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX 32768-word CXK58257AP/AM-70LX 70LLX CXK58257AP/AM-85LX 85LLX CXK58257AP/AM-10LX 10LLX CXK58257AM-70LL SONY 171 CXK58257AP

    ck-ck

    Abstract: PLS105 82S105/BXA 82S105 GDFP2-F28 GDIP1-T28 elevator circuit diagram
    Text: Philips Semiconductors Military Programmable Logic Devices Product specification Field-programmable logic sequencer 16x48x8 82S105 (PLS105) FEATURES DESCRIPTION • Field-programmable (Ni-Cr link) The 82S105 Is a bipolar programmable state machine of the Mealy


    OCR Scan     		PDF 16x48x8) 82S105 PLS105) 650mW ck-ck PLS105 82S105/BXA 82S105 GDFP2-F28 GDIP1-T28 elevator circuit diagram