Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC1608T1R0M Features Item Summary 1.0 H(±20%), 850mA, 520mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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BRC1608T1R0M
850mA,
520mA,
3000pcs
96MHz
850mA
520mA
140MHz
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PDF
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CB2012T100K
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100KR Features Item Summary 10 H(±10%), 200mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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CB2012T100KR
200mA,
520mA,
3000pcs
52MHz
200mA
520mA
32MHz
CB2012T100K
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PDF
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Untitled
Abstract: No abstract text available
Text: STT2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
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Original
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STT2622
520mA,
STT2622
OT-26
01-Jun-2002
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PDF
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GTT2622
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 1.8 520mA Description The GTT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
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Original
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GTT2622
520mA
GTT2622
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T4R7M Features Item Summary 4.7 H(±20%), 360mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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CBC2012T4R7M
360mA,
520mA,
3000pcs
96MHz
360mA
520mA
45MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2016T2R2M Features Item Summary 2.2 H(±20%), 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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LBC2016T2R2M
520mA,
2000pcs
96MHz
520mA
70MHz
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PDF
|
Untitled
Abstract: No abstract text available
Text: AP2622GY-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D1 D2 Small Package Outline Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8 ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to
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Original
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AP2622GY-HF
520mA
OT-26
OT-26
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520TR12K Features Item Summary 0.12 H(±10%), 520mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table
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Original
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LEM2520TR12K
520mA,
2000pcs
520mA
600MHz
30min
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PDF
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el inverter
Abstract: INVERTER CIRCUIT el inverter circuit 620 diode Inverter application note led inverter inverter
Text: Fleets Point House, Willis Way, Poole, BH15 3SS, England. EL Inverter Data Sheet. Part No. 086040 Issue 2. 18/04/2000 This inverter will drive up to 620 sq. cm of EL A4 Available with either flying-leads or pins. INPUT VOLTAGE: 12vDC. INPUT CURRENT: 520ma
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Original
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12vDC.
520ma
115Vrms
PC5602
el inverter
INVERTER CIRCUIT
el inverter circuit
620 diode
Inverter application note
led inverter
inverter
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PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2622GY-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Small surface-mount package 50V R DS ON 1.8Ω ID RoHS-compliant, halogen-free 520mA G2 G1 S1 Description
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Original
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AP2622GY-HF-3
520mA
OT-26
OT-26
12REF
37REF
90REF
20REF
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PDF
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Untitled
Abstract: No abstract text available
Text: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.
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Original
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SST2622
520mA,
OT-26
37Ref.
SST2622
OT-26
20Ref.
01-Jun-2002
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CB2016T100KV Features Item Summary 10 H(±10%), 250mA, 520mA, 0806 Lifecycle Stage Mass Production AEC-Q200 qualified
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Original
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CB2016T100KV
250mA,
520mA,
AEC-Q200
2000pcs
52MHz
250mA
520mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T100K Features Item Summary 10 H(±10%), 250mA, 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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CB2016T100K
250mA,
520mA,
2000pcs
52MHz
250mA
520mA
32MHz
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PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016TR22J Features Item Summary 0.22 H(±5%), 520mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table
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Original
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LBM2016TR22J
520mA,
2000pcs
520mA
450MHz
30min
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PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S0N9C-T Features Item Summary 0.9nH(-0.2nH to +0.2nH), 520mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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Original
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HKQ0603S0N9C-T
520mA,
15000pcs
500MHz
520mA
10000MHz
13min
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PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100KR Features Item Summary 10 H(±10%), 200mA, 520mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
|
CB2012T100KR
200mA,
520mA,
3000pcs
52MHz
200mA
520mA
32MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP2622GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D1 D2 Small Package Outline Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8 ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to
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Original
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AP2622GY
520mA
OT-26
OT-26
100ms
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PDF
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WTL2622
Abstract: No abstract text available
Text: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA
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Original
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WTL2622
520mAMPERES
OT-26
300us,
19-Sep-05
WTL2622
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS6012T470MMGJV Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production
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Original
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NRS6012T470MMGJV
520mA,
460mA
AEC-Q200
1000pcs
100kHz
520mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS6012T470MMGJV Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production
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Original
|
NRS6012T470MMGJV
520mA,
460mA
AEC-Q200
1000pcs
100kHz
520mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS6012T470MMGJ Features Item Summary 47 H(±20%), 520mA, 460mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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Original
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NRS6012T470MMGJ
520mA,
460mA
1000pcs
100kHz
520mA
|
PDF
|
08VG
Abstract: No abstract text available
Text: AP2622GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D1 D2 ▼ Small Package Outline ▼ Surface Mount Package G1 G2 BVDSS 50V RDS ON 1.8Ω ID 520mA ▼ RoHS Compliant S2 S1 Description
|
Original
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AP2622GY
520mA
OT-26
OT-26
100us
100ms
08VG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EPCOS P T C T h e rm is to rs T h erm isto r for m oto r protection <bOL7 — H -1 0 CJ ' E m 520max ^NAT fip T C I ’n a t - 5 K =c O r d e r in g c o d e U PTC < 2 , 5 V _a M in . q ty . M ax. q ty - ! I ’n a t ' i + 5 K a i I V * = 30 V, R r < 100 Q
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OCR Scan
|
520max
59100-M
080-A
100-A
120-A
130-A
150-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: iV I V U K ' LED BACKLIGHT FOR LCD DISPLAY U ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 520mA 10V -20 to +70°C -30 to +80°C If Vr TQpr Tstg ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Forward Voltage
|
OCR Scan
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520mA
260mA
|
PDF
|
